Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200 GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain-to-source co...

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Veröffentlicht in:	Applied physics letters 2014-06, Vol.104 (25)
Hauptverfasser:	Kurita, Y., Ducournau, G., Coquillat, D., Satou, A., Kobayashi, K., Boubanga Tombet, S., Meziani, Y. M., Popov, V. V., Knap, W., Suemitsu, T., Otsuji, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM COMPOUNDS Applied physics ARSENIC COMPOUNDS ASYMMETRY Broadband CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Dependence DETECTION ELECTRON MOBILITY Electronics Engineering Sciences FREQUENCY DEPENDENCE GALLIUM ARSENIDES GALLIUM COMPOUNDS High electron mobility transistors INDIUM ARSENIDES INDIUM COMPOUNDS Indium gallium arsenides INDIUM PHOSPHIDES Instrumentation and Detectors PHOSPHORUS COMPOUNDS Physics PLASMONS Semiconductor devices SIMULATION TEMPERATURE RANGE 0273-0400 K THZ RANGE TRANSISTORS
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