Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200 GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain-to-source co...

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Veröffentlicht in:Applied physics letters 2014-06, Vol.104 (25)
Hauptverfasser: Kurita, Y., Ducournau, G., Coquillat, D., Satou, A., Kobayashi, K., Boubanga Tombet, S., Meziani, Y. M., Popov, V. V., Knap, W., Suemitsu, T., Otsuji, T.
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Sprache:eng
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Zusammenfassung:We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200 GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain-to-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz0.5 at 200 GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2–2 THz is in good agreement with the theory.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4885499