Investigations of stochastic resonance in two-terminal device with vanadium dioxide film
The results of stochastic resonance investigation in a nonlinear system, consisting of a microstructure with a polycrystalline vanadium dioxide (VO2) film grown on sapphire and resistor in series are reported. Nonlinearity of the system was provided due to insulator-metal phase transition in VO2. In...
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| Veröffentlicht in: | Journal of applied physics 2014-05, Vol.115 (20) |
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| creator | Aliev, V. Sh Bortnikov, S. G. Badmaeva, I. A. |
| description | The results of stochastic resonance investigation in a nonlinear system, consisting of a microstructure with a polycrystalline vanadium dioxide (VO2) film grown on sapphire and resistor in series are reported. Nonlinearity of the system was provided due to insulator-metal phase transition in VO2. In the stochastic resonance regime at 100 Hz signal frequency, the transition coefficient of signal-to-noise ratio reached 87 in contrast to 250 for microstructures with VO2 films grown on silica in our previous investigations. The measured characteristics of microstructures with VO2 films grown on silica and sapphire substrates were found to be qualitatively similar. For both substrates, a stochastic resonance was observed at threshold switching voltage from insulating to metallic state of VO2. For sapphire substrate the output signal-to-noise ratio rose at higher signal frequencies. The stochastic resonance phenomenon in VO2 films is explained in terms of the monostable damped oscillator model. |
| doi_str_mv | 10.1063/1.4880660 |
| format | Article |
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Sh ; Bortnikov, S. G. ; Badmaeva, I. A.</creator><creatorcontrib>Aliev, V. Sh ; Bortnikov, S. G. ; Badmaeva, I. A.</creatorcontrib><description>The results of stochastic resonance investigation in a nonlinear system, consisting of a microstructure with a polycrystalline vanadium dioxide (VO2) film grown on sapphire and resistor in series are reported. Nonlinearity of the system was provided due to insulator-metal phase transition in VO2. In the stochastic resonance regime at 100 Hz signal frequency, the transition coefficient of signal-to-noise ratio reached 87 in contrast to 250 for microstructures with VO2 films grown on silica in our previous investigations. The measured characteristics of microstructures with VO2 films grown on silica and sapphire substrates were found to be qualitatively similar. For both substrates, a stochastic resonance was observed at threshold switching voltage from insulating to metallic state of VO2. For sapphire substrate the output signal-to-noise ratio rose at higher signal frequencies. The stochastic resonance phenomenon in VO2 films is explained in terms of the monostable damped oscillator model.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4880660</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; ELECTRIC POTENTIAL ; METALS ; MICROSTRUCTURE ; NONLINEAR PROBLEMS ; Nonlinear systems ; Nonlinearity ; OSCILLATORS ; Oxygen consumption ; PHASE TRANSFORMATIONS ; Phase transitions ; POLYCRYSTALS ; Quantum theory ; RESISTORS ; RESONANCE ; SAPPHIRE ; SIGNAL-TO-NOISE RATIO ; SILICA ; Silicon dioxide ; STOCHASTIC PROCESSES ; Stochastic resonance ; SUBSTRATES ; Vanadium dioxide ; VANADIUM OXIDES</subject><ispartof>Journal of applied physics, 2014-05, Vol.115 (20)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-ced8f6e170f783922545500cebb23ead737f8efc29b51d4439031d0696cd41163</citedby><cites>FETCH-LOGICAL-c285t-ced8f6e170f783922545500cebb23ead737f8efc29b51d4439031d0696cd41163</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22304326$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Aliev, V. Sh</creatorcontrib><creatorcontrib>Bortnikov, S. G.</creatorcontrib><creatorcontrib>Badmaeva, I. A.</creatorcontrib><title>Investigations of stochastic resonance in two-terminal device with vanadium dioxide film</title><title>Journal of applied physics</title><description>The results of stochastic resonance investigation in a nonlinear system, consisting of a microstructure with a polycrystalline vanadium dioxide (VO2) film grown on sapphire and resistor in series are reported. Nonlinearity of the system was provided due to insulator-metal phase transition in VO2. In the stochastic resonance regime at 100 Hz signal frequency, the transition coefficient of signal-to-noise ratio reached 87 in contrast to 250 for microstructures with VO2 films grown on silica in our previous investigations. The measured characteristics of microstructures with VO2 films grown on silica and sapphire substrates were found to be qualitatively similar. For both substrates, a stochastic resonance was observed at threshold switching voltage from insulating to metallic state of VO2. For sapphire substrate the output signal-to-noise ratio rose at higher signal frequencies. The stochastic resonance phenomenon in VO2 films is explained in terms of the monostable damped oscillator model.</description><subject>Applied physics</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>ELECTRIC POTENTIAL</subject><subject>METALS</subject><subject>MICROSTRUCTURE</subject><subject>NONLINEAR PROBLEMS</subject><subject>Nonlinear systems</subject><subject>Nonlinearity</subject><subject>OSCILLATORS</subject><subject>Oxygen consumption</subject><subject>PHASE TRANSFORMATIONS</subject><subject>Phase transitions</subject><subject>POLYCRYSTALS</subject><subject>Quantum theory</subject><subject>RESISTORS</subject><subject>RESONANCE</subject><subject>SAPPHIRE</subject><subject>SIGNAL-TO-NOISE RATIO</subject><subject>SILICA</subject><subject>Silicon dioxide</subject><subject>STOCHASTIC PROCESSES</subject><subject>Stochastic resonance</subject><subject>SUBSTRATES</subject><subject>Vanadium dioxide</subject><subject>VANADIUM OXIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpNkEtLAzEUhYMoWKsL_0HAlYupN8lMMrOU4qNQcKPgLqR52JROUpO01X_vlHbh6sLh4_Kdg9AtgQkBzh7IpG5b4BzO0IhA21WiaeAcjQAoqdpOdJfoKucVACEt60bocxZ2Nhf_pYqPIePocC5RL9WQaZxsjkEFbbEPuOxjVWzqfVBrbOzOD_HelyXeqaCM3_bY-PjjjcXOr_trdOHUOtub0x2jj-en9-lrNX97mU0f55WmbVMqbU3ruCUCnBiEKG3qQRi0XSwos8oIJlxrnabdoiGmrlkHjBjgHdemJoSzMbo7_o2DsczaF6uXOoZgdZGUMqgZ_UdtUvzeDoXlKm7TUCRLSqjgAmh9oO6PlE4x52Sd3CTfq_QrCcjDvJLI07zsD0Gxa90</recordid><startdate>20140528</startdate><enddate>20140528</enddate><creator>Aliev, V. Sh</creator><creator>Bortnikov, S. G.</creator><creator>Badmaeva, I. A.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140528</creationdate><title>Investigations of stochastic resonance in two-terminal device with vanadium dioxide film</title><author>Aliev, V. Sh ; Bortnikov, S. G. ; Badmaeva, I. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-ced8f6e170f783922545500cebb23ead737f8efc29b51d4439031d0696cd41163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>ELECTRIC POTENTIAL</topic><topic>METALS</topic><topic>MICROSTRUCTURE</topic><topic>NONLINEAR PROBLEMS</topic><topic>Nonlinear systems</topic><topic>Nonlinearity</topic><topic>OSCILLATORS</topic><topic>Oxygen consumption</topic><topic>PHASE TRANSFORMATIONS</topic><topic>Phase transitions</topic><topic>POLYCRYSTALS</topic><topic>Quantum theory</topic><topic>RESISTORS</topic><topic>RESONANCE</topic><topic>SAPPHIRE</topic><topic>SIGNAL-TO-NOISE RATIO</topic><topic>SILICA</topic><topic>Silicon dioxide</topic><topic>STOCHASTIC PROCESSES</topic><topic>Stochastic resonance</topic><topic>SUBSTRATES</topic><topic>Vanadium dioxide</topic><topic>VANADIUM OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aliev, V. Sh</creatorcontrib><creatorcontrib>Bortnikov, S. G.</creatorcontrib><creatorcontrib>Badmaeva, I. A.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aliev, V. Sh</au><au>Bortnikov, S. G.</au><au>Badmaeva, I. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigations of stochastic resonance in two-terminal device with vanadium dioxide film</atitle><jtitle>Journal of applied physics</jtitle><date>2014-05-28</date><risdate>2014</risdate><volume>115</volume><issue>20</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The results of stochastic resonance investigation in a nonlinear system, consisting of a microstructure with a polycrystalline vanadium dioxide (VO2) film grown on sapphire and resistor in series are reported. Nonlinearity of the system was provided due to insulator-metal phase transition in VO2. In the stochastic resonance regime at 100 Hz signal frequency, the transition coefficient of signal-to-noise ratio reached 87 in contrast to 250 for microstructures with VO2 films grown on silica in our previous investigations. The measured characteristics of microstructures with VO2 films grown on silica and sapphire substrates were found to be qualitatively similar. For both substrates, a stochastic resonance was observed at threshold switching voltage from insulating to metallic state of VO2. For sapphire substrate the output signal-to-noise ratio rose at higher signal frequencies. The stochastic resonance phenomenon in VO2 films is explained in terms of the monostable damped oscillator model.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4880660</doi></addata></record> |
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| ispartof | Journal of applied physics, 2014-05, Vol.115 (20) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRIC POTENTIAL METALS MICROSTRUCTURE NONLINEAR PROBLEMS Nonlinear systems Nonlinearity OSCILLATORS Oxygen consumption PHASE TRANSFORMATIONS Phase transitions POLYCRYSTALS Quantum theory RESISTORS RESONANCE SAPPHIRE SIGNAL-TO-NOISE RATIO SILICA Silicon dioxide STOCHASTIC PROCESSES Stochastic resonance SUBSTRATES Vanadium dioxide VANADIUM OXIDES |
| title | Investigations of stochastic resonance in two-terminal device with vanadium dioxide film |
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