High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding
We report on the fabrication and characterization of hard x-ray waveguide channels manufactured by e-beam lithography, reactive ion etching and wafer bonding. The guiding layer consists of air or vacuum and the cladding material of silicon, which is favorable in view of minimizing absorption losses....
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| Veröffentlicht in: | Journal of applied physics 2014-06, Vol.115 (21) |
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| container_issue | 21 |
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| container_title | Journal of applied physics |
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| creator | Neubauer, H. Hoffmann, S. Kanbach, M. Haber, J. Kalbfleisch, S. Krüger, S. P. Salditt, T. |
| description | We report on the fabrication and characterization of hard x-ray waveguide channels manufactured by e-beam lithography, reactive ion etching and wafer bonding. The guiding layer consists of air or vacuum and the cladding material of silicon, which is favorable in view of minimizing absorption losses. The specifications for waveguide channels which have to be met in the hard x-ray range to achieve a suitable beam confinement in two orthogonal directions are extremely demanding. First, high aspect ratios up to 106 have to be achieved between lateral structure size and length of the guides. Second, the channels have to be deeply embedded in material to warrant the guiding of the desired modes while absorbing all other (radiative) modes in the cladding material. We give a detailed report on device fabrication with the respective protocols and parameter optimization, the inspection and the optical characterization. |
| doi_str_mv | 10.1063/1.4881495 |
| format | Article |
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P. ; Salditt, T.</creator><creatorcontrib>Neubauer, H. ; Hoffmann, S. ; Kanbach, M. ; Haber, J. ; Kalbfleisch, S. ; Krüger, S. P. ; Salditt, T.</creatorcontrib><description>We report on the fabrication and characterization of hard x-ray waveguide channels manufactured by e-beam lithography, reactive ion etching and wafer bonding. The guiding layer consists of air or vacuum and the cladding material of silicon, which is favorable in view of minimizing absorption losses. The specifications for waveguide channels which have to be met in the hard x-ray range to achieve a suitable beam confinement in two orthogonal directions are extremely demanding. First, high aspect ratios up to 106 have to be achieved between lateral structure size and length of the guides. Second, the channels have to be deeply embedded in material to warrant the guiding of the desired modes while absorbing all other (radiative) modes in the cladding material. We give a detailed report on device fabrication with the respective protocols and parameter optimization, the inspection and the optical characterization.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4881495</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ABSORPTION ; ASPECT RATIO ; BONDING ; Channels ; Chemical bonds ; CLADDING ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; ELECTRON BEAMS ; ETCHING ; HARD X RADIATION ; High aspect ratio ; INSPECTION ; Ion etching ; LAYERS ; Lithography ; Optical properties ; OPTIMIZATION ; Reactive ion etching ; SILICON ; SPECIFICATIONS ; WAVEGUIDES</subject><ispartof>Journal of applied physics, 2014-06, Vol.115 (21)</ispartof><rights>2014 Author(s). 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P.</creatorcontrib><creatorcontrib>Salditt, T.</creatorcontrib><title>High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding</title><title>Journal of applied physics</title><description>We report on the fabrication and characterization of hard x-ray waveguide channels manufactured by e-beam lithography, reactive ion etching and wafer bonding. The guiding layer consists of air or vacuum and the cladding material of silicon, which is favorable in view of minimizing absorption losses. The specifications for waveguide channels which have to be met in the hard x-ray range to achieve a suitable beam confinement in two orthogonal directions are extremely demanding. First, high aspect ratios up to 106 have to be achieved between lateral structure size and length of the guides. Second, the channels have to be deeply embedded in material to warrant the guiding of the desired modes while absorbing all other (radiative) modes in the cladding material. We give a detailed report on device fabrication with the respective protocols and parameter optimization, the inspection and the optical characterization.</description><subject>ABSORPTION</subject><subject>ASPECT RATIO</subject><subject>BONDING</subject><subject>Channels</subject><subject>Chemical bonds</subject><subject>CLADDING</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>ELECTRON BEAMS</subject><subject>ETCHING</subject><subject>HARD X RADIATION</subject><subject>High aspect ratio</subject><subject>INSPECTION</subject><subject>Ion etching</subject><subject>LAYERS</subject><subject>Lithography</subject><subject>Optical properties</subject><subject>OPTIMIZATION</subject><subject>Reactive ion etching</subject><subject>SILICON</subject><subject>SPECIFICATIONS</subject><subject>WAVEGUIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkE9LwzAYxoMoOKcHv0HAk4fON0nTJkcZ6gTBix4lpOnbNmNrZ5Kp_fZWNvD0XH7PHx5CrhksGBTiji1ypViu5QmZMVA6K6WEUzID4CxTutTn5CLGNQBjSugZ-Vj5tqM27tAlGmzyA_3Jgh3pt_3Cdu9rpK6zfY-bSBtbBe9swppWI8WsQrulG5-6oQ12143U9vXkazDQauhr37eX5Kyxm4hXR52T98eHt-Uqe3l9el7ev2ROcEgZKxU65AxAKiyLXEinpLYVcsFdrbUqbemmNihyQJdLXbPGNVXDgFdWVyjm5OaQO8TkTXQ-oevcMM12yXAuIOcF_FO7MHzuMSazHvahn4YZznghlRAsn6jbA-XCEGPAxuyC39owGgbm72PDzPFj8Qv5rm2d</recordid><startdate>20140607</startdate><enddate>20140607</enddate><creator>Neubauer, H.</creator><creator>Hoffmann, S.</creator><creator>Kanbach, M.</creator><creator>Haber, J.</creator><creator>Kalbfleisch, S.</creator><creator>Krüger, S. P.</creator><creator>Salditt, T.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140607</creationdate><title>High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding</title><author>Neubauer, H. ; Hoffmann, S. ; Kanbach, M. ; Haber, J. ; Kalbfleisch, S. ; Krüger, S. 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P.</au><au>Salditt, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding</atitle><jtitle>Journal of applied physics</jtitle><date>2014-06-07</date><risdate>2014</risdate><volume>115</volume><issue>21</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>We report on the fabrication and characterization of hard x-ray waveguide channels manufactured by e-beam lithography, reactive ion etching and wafer bonding. The guiding layer consists of air or vacuum and the cladding material of silicon, which is favorable in view of minimizing absorption losses. The specifications for waveguide channels which have to be met in the hard x-ray range to achieve a suitable beam confinement in two orthogonal directions are extremely demanding. First, high aspect ratios up to 106 have to be achieved between lateral structure size and length of the guides. Second, the channels have to be deeply embedded in material to warrant the guiding of the desired modes while absorbing all other (radiative) modes in the cladding material. We give a detailed report on device fabrication with the respective protocols and parameter optimization, the inspection and the optical characterization.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4881495</doi><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2014-06, Vol.115 (21) |
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| language | eng |
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| source | American Institute of Physics (AIP) Journals; Alma/SFX Local Collection |
| subjects | ABSORPTION ASPECT RATIO BONDING Channels Chemical bonds CLADDING CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRON BEAMS ETCHING HARD X RADIATION High aspect ratio INSPECTION Ion etching LAYERS Lithography Optical properties OPTIMIZATION Reactive ion etching SILICON SPECIFICATIONS WAVEGUIDES |
| title | High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding |
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