Semipolar (202¯1) GaN and InGaN quantum wells on sapphire substrates
Here, we demonstrate a process to produce planar semipolar (202¯1) GaN templates on sapphire substrates. We obtain (202¯1) oriented GaN by inclined c-plane sidewall growth from etched sapphire, resulting in single crystal material with on-axis x-ray diffraction linewidth below 200 arc sec. The surfa...
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| Veröffentlicht in: | Applied physics letters 2014-06, Vol.104 (26) |
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| container_title | Applied physics letters |
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| creator | Leung, Benjamin Wang, Dili Kuo, Yu-Sheng Xiong, Kanglin Song, Jie Chen, Danti Park, Sung Hyun Hong, Su Yeon Choi, Joo Won Han, Jung |
| description | Here, we demonstrate a process to produce planar semipolar (202¯1) GaN templates on sapphire substrates. We obtain (202¯1) oriented GaN by inclined c-plane sidewall growth from etched sapphire, resulting in single crystal material with on-axis x-ray diffraction linewidth below 200 arc sec. The surface, composed of (101¯1) and (101¯0) facets, is planarized by the chemical-mechanical polishing of full 2 in. wafers, with a final surface root mean square roughness of |
| doi_str_mv | 10.1063/1.4886578 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22303892</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2126574080</sourcerecordid><originalsourceid>FETCH-LOGICAL-c266t-de8f36ae46477297f854bd9b39c17fc0b0ec58be3331bdbc9009786aaecafe623</originalsourceid><addsrcrecordid>eNpNkNFKwzAUhoMoOKcXvkHAG3fReZK0SXopY05h6IV6HdL0lHV0bZekiE_lO_hkdmwXXp3_wMfPz0fILYM5Ayke2DzVWmZKn5EJA6USwZg-JxMAEInMM3ZJrkLYjm_GhZiQ5Tvu6r5rrKf3HPjvD5vRlX2lti3pS3tI-8G2cdjRL2yaQLuWBtv3m9ojDUMRorcRwzW5qGwT8OZ0p-TzafmxeE7Wb6uXxeM6cVzKmJSoKyEtpjJViueq0llalHkhcsdU5aAAdJkuUAjBirJwOUCutLQWna1QcjEld8feLsTaBFdHdBvXtS26aDgXIHT-j-p9tx8wRLPtBt-OwwxnfJSTgoaRmh0p57sQPFam9_XO-m_DwBxcGmZOLsUfpQRkNg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2126574080</pqid></control><display><type>article</type><title>Semipolar (202¯1) GaN and InGaN quantum wells on sapphire substrates</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Leung, Benjamin ; Wang, Dili ; Kuo, Yu-Sheng ; Xiong, Kanglin ; Song, Jie ; Chen, Danti ; Park, Sung Hyun ; Hong, Su Yeon ; Choi, Joo Won ; Han, Jung</creator><creatorcontrib>Leung, Benjamin ; Wang, Dili ; Kuo, Yu-Sheng ; Xiong, Kanglin ; Song, Jie ; Chen, Danti ; Park, Sung Hyun ; Hong, Su Yeon ; Choi, Joo Won ; Han, Jung</creatorcontrib><description>Here, we demonstrate a process to produce planar semipolar (202¯1) GaN templates on sapphire substrates. We obtain (202¯1) oriented GaN by inclined c-plane sidewall growth from etched sapphire, resulting in single crystal material with on-axis x-ray diffraction linewidth below 200 arc sec. The surface, composed of (101¯1) and (101¯0) facets, is planarized by the chemical-mechanical polishing of full 2 in. wafers, with a final surface root mean square roughness of <0.5 nm. We then analyze facet formation and roughening mechanisms on the (202¯1) surface and establish a growth condition in N2 carrier gas to maintain a planar surface for further device layer growth. Finally, the capability of these semipolar (202¯1) GaN templates to produce high quality device structures is verified by the growth and characterization of InGaN/GaN multiple quantum well structures. It is expected that the methods shown here can enable the benefits of using semipolar orientations in a scalable and practical process and can be readily extended to achieve devices on surfaces using any orientation of semipolar GaN on sapphire.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4886578</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Carrier gases ; CARRIERS ; Chemical-mechanical polishing ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL GROWTH ; GALLIUM NITRIDES ; INDIUM COMPOUNDS ; LAYERS ; MECHANICAL POLISHING ; MONOCRYSTALS ; Organic chemistry ; ORIENTATION ; QUANTUM WELLS ; Roughening ; ROUGHNESS ; SAPPHIRE ; Single crystals ; SUBSTRATES ; SURFACES ; X-RAY DIFFRACTION</subject><ispartof>Applied physics letters, 2014-06, Vol.104 (26)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c266t-de8f36ae46477297f854bd9b39c17fc0b0ec58be3331bdbc9009786aaecafe623</citedby><cites>FETCH-LOGICAL-c266t-de8f36ae46477297f854bd9b39c17fc0b0ec58be3331bdbc9009786aaecafe623</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22303892$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Leung, Benjamin</creatorcontrib><creatorcontrib>Wang, Dili</creatorcontrib><creatorcontrib>Kuo, Yu-Sheng</creatorcontrib><creatorcontrib>Xiong, Kanglin</creatorcontrib><creatorcontrib>Song, Jie</creatorcontrib><creatorcontrib>Chen, Danti</creatorcontrib><creatorcontrib>Park, Sung Hyun</creatorcontrib><creatorcontrib>Hong, Su Yeon</creatorcontrib><creatorcontrib>Choi, Joo Won</creatorcontrib><creatorcontrib>Han, Jung</creatorcontrib><title>Semipolar (202¯1) GaN and InGaN quantum wells on sapphire substrates</title><title>Applied physics letters</title><description>Here, we demonstrate a process to produce planar semipolar (202¯1) GaN templates on sapphire substrates. We obtain (202¯1) oriented GaN by inclined c-plane sidewall growth from etched sapphire, resulting in single crystal material with on-axis x-ray diffraction linewidth below 200 arc sec. The surface, composed of (101¯1) and (101¯0) facets, is planarized by the chemical-mechanical polishing of full 2 in. wafers, with a final surface root mean square roughness of <0.5 nm. We then analyze facet formation and roughening mechanisms on the (202¯1) surface and establish a growth condition in N2 carrier gas to maintain a planar surface for further device layer growth. Finally, the capability of these semipolar (202¯1) GaN templates to produce high quality device structures is verified by the growth and characterization of InGaN/GaN multiple quantum well structures. It is expected that the methods shown here can enable the benefits of using semipolar orientations in a scalable and practical process and can be readily extended to achieve devices on surfaces using any orientation of semipolar GaN on sapphire.</description><subject>Applied physics</subject><subject>Carrier gases</subject><subject>CARRIERS</subject><subject>Chemical-mechanical polishing</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL GROWTH</subject><subject>GALLIUM NITRIDES</subject><subject>INDIUM COMPOUNDS</subject><subject>LAYERS</subject><subject>MECHANICAL POLISHING</subject><subject>MONOCRYSTALS</subject><subject>Organic chemistry</subject><subject>ORIENTATION</subject><subject>QUANTUM WELLS</subject><subject>Roughening</subject><subject>ROUGHNESS</subject><subject>SAPPHIRE</subject><subject>Single crystals</subject><subject>SUBSTRATES</subject><subject>SURFACES</subject><subject>X-RAY DIFFRACTION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpNkNFKwzAUhoMoOKcXvkHAG3fReZK0SXopY05h6IV6HdL0lHV0bZekiE_lO_hkdmwXXp3_wMfPz0fILYM5Ayke2DzVWmZKn5EJA6USwZg-JxMAEInMM3ZJrkLYjm_GhZiQ5Tvu6r5rrKf3HPjvD5vRlX2lti3pS3tI-8G2cdjRL2yaQLuWBtv3m9ojDUMRorcRwzW5qGwT8OZ0p-TzafmxeE7Wb6uXxeM6cVzKmJSoKyEtpjJViueq0llalHkhcsdU5aAAdJkuUAjBirJwOUCutLQWna1QcjEld8feLsTaBFdHdBvXtS26aDgXIHT-j-p9tx8wRLPtBt-OwwxnfJSTgoaRmh0p57sQPFam9_XO-m_DwBxcGmZOLsUfpQRkNg</recordid><startdate>20140630</startdate><enddate>20140630</enddate><creator>Leung, Benjamin</creator><creator>Wang, Dili</creator><creator>Kuo, Yu-Sheng</creator><creator>Xiong, Kanglin</creator><creator>Song, Jie</creator><creator>Chen, Danti</creator><creator>Park, Sung Hyun</creator><creator>Hong, Su Yeon</creator><creator>Choi, Joo Won</creator><creator>Han, Jung</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140630</creationdate><title>Semipolar (202¯1) GaN and InGaN quantum wells on sapphire substrates</title><author>Leung, Benjamin ; Wang, Dili ; Kuo, Yu-Sheng ; Xiong, Kanglin ; Song, Jie ; Chen, Danti ; Park, Sung Hyun ; Hong, Su Yeon ; Choi, Joo Won ; Han, Jung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c266t-de8f36ae46477297f854bd9b39c17fc0b0ec58be3331bdbc9009786aaecafe623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Carrier gases</topic><topic>CARRIERS</topic><topic>Chemical-mechanical polishing</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL GROWTH</topic><topic>GALLIUM NITRIDES</topic><topic>INDIUM COMPOUNDS</topic><topic>LAYERS</topic><topic>MECHANICAL POLISHING</topic><topic>MONOCRYSTALS</topic><topic>Organic chemistry</topic><topic>ORIENTATION</topic><topic>QUANTUM WELLS</topic><topic>Roughening</topic><topic>ROUGHNESS</topic><topic>SAPPHIRE</topic><topic>Single crystals</topic><topic>SUBSTRATES</topic><topic>SURFACES</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Leung, Benjamin</creatorcontrib><creatorcontrib>Wang, Dili</creatorcontrib><creatorcontrib>Kuo, Yu-Sheng</creatorcontrib><creatorcontrib>Xiong, Kanglin</creatorcontrib><creatorcontrib>Song, Jie</creatorcontrib><creatorcontrib>Chen, Danti</creatorcontrib><creatorcontrib>Park, Sung Hyun</creatorcontrib><creatorcontrib>Hong, Su Yeon</creatorcontrib><creatorcontrib>Choi, Joo Won</creatorcontrib><creatorcontrib>Han, Jung</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Leung, Benjamin</au><au>Wang, Dili</au><au>Kuo, Yu-Sheng</au><au>Xiong, Kanglin</au><au>Song, Jie</au><au>Chen, Danti</au><au>Park, Sung Hyun</au><au>Hong, Su Yeon</au><au>Choi, Joo Won</au><au>Han, Jung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Semipolar (202¯1) GaN and InGaN quantum wells on sapphire substrates</atitle><jtitle>Applied physics letters</jtitle><date>2014-06-30</date><risdate>2014</risdate><volume>104</volume><issue>26</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Here, we demonstrate a process to produce planar semipolar (202¯1) GaN templates on sapphire substrates. We obtain (202¯1) oriented GaN by inclined c-plane sidewall growth from etched sapphire, resulting in single crystal material with on-axis x-ray diffraction linewidth below 200 arc sec. The surface, composed of (101¯1) and (101¯0) facets, is planarized by the chemical-mechanical polishing of full 2 in. wafers, with a final surface root mean square roughness of <0.5 nm. We then analyze facet formation and roughening mechanisms on the (202¯1) surface and establish a growth condition in N2 carrier gas to maintain a planar surface for further device layer growth. Finally, the capability of these semipolar (202¯1) GaN templates to produce high quality device structures is verified by the growth and characterization of InGaN/GaN multiple quantum well structures. It is expected that the methods shown here can enable the benefits of using semipolar orientations in a scalable and practical process and can be readily extended to achieve devices on surfaces using any orientation of semipolar GaN on sapphire.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4886578</doi></addata></record> |
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| ispartof | Applied physics letters, 2014-06, Vol.104 (26) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Carrier gases CARRIERS Chemical-mechanical polishing CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH GALLIUM NITRIDES INDIUM COMPOUNDS LAYERS MECHANICAL POLISHING MONOCRYSTALS Organic chemistry ORIENTATION QUANTUM WELLS Roughening ROUGHNESS SAPPHIRE Single crystals SUBSTRATES SURFACES X-RAY DIFFRACTION |
| title | Semipolar (202¯1) GaN and InGaN quantum wells on sapphire substrates |
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