Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability
Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel de...
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Veröffentlicht in: | Applied physics letters 2014-06, Vol.104 (25) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al2O3/ZrO2 as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices with encapsulation. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4885362 |