Cleaning graphene with a titanium sacrificial layer
Graphene is a promising material for future electronic applications and chemical vapor deposition of graphene on copper is a promising method for synthesizing graphene on the wafer scale. The processing of such graphene films into electronic devices introduces a variety of contaminants which can be...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2014-06, Vol.104 (22) |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 22 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 104 |
| creator | Joiner, C. A. Roy, T. Hesabi, Z. R. Chakrabarti, B. Vogel, E. M. |
| description | Graphene is a promising material for future electronic applications and chemical vapor deposition of graphene on copper is a promising method for synthesizing graphene on the wafer scale. The processing of such graphene films into electronic devices introduces a variety of contaminants which can be difficult to remove. An approach to cleaning residues from the graphene channel is presented in which a thin layer of titanium is deposited via thermal e-beam evaporation and immediately removed. This procedure does not damage the graphene as evidenced by Raman spectroscopy, greatly enhances the electrical performance of the fabricated graphene field effect transistors, and completely removes the chemical residues from the surface of the graphene channel as evidenced by x-ray photoelectron spectroscopy. |
| doi_str_mv | 10.1063/1.4881886 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22300274</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2126583753</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-3daed47a62da92567adc0047eb1b51691260cb39668719cb4bae27c356de51f03</originalsourceid><addsrcrecordid>eNpFkEtLAzEUhYMoWKsL_8GAKxdT782dPGYpxRcU3Og6ZDKZNmU6U5MU6b93pIKrw-F8nHs5jN0iLBAkPeCi0hq1lmdshqBUSYj6nM0AgEpZC7xkVyltJys40YzRsvd2CMO6WEe73_jBF98hbwpb5JCn4LArknUxdMEF2xe9Pfp4zS462yd_86dz9vn89LF8LVfvL2_Lx1XpiEMuqbW-rZSVvLU1F1LZ1gFUyjfYCJQ1cgmuoVpKrbB2TdVYz5UjIVsvsAOas7tT75hyMMmF7N3GjcPgXTacEwBX1T-1j-PXwadstuMhDtNjhk8nhCYlaKLuT5SLY0rRd2Yfw87Go0Ewv8sZNH_L0Q8gfV2d</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2126583753</pqid></control><display><type>article</type><title>Cleaning graphene with a titanium sacrificial layer</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Joiner, C. A. ; Roy, T. ; Hesabi, Z. R. ; Chakrabarti, B. ; Vogel, E. M.</creator><creatorcontrib>Joiner, C. A. ; Roy, T. ; Hesabi, Z. R. ; Chakrabarti, B. ; Vogel, E. M.</creatorcontrib><description>Graphene is a promising material for future electronic applications and chemical vapor deposition of graphene on copper is a promising method for synthesizing graphene on the wafer scale. The processing of such graphene films into electronic devices introduces a variety of contaminants which can be difficult to remove. An approach to cleaning residues from the graphene channel is presented in which a thin layer of titanium is deposited via thermal e-beam evaporation and immediately removed. This procedure does not damage the graphene as evidenced by Raman spectroscopy, greatly enhances the electrical performance of the fabricated graphene field effect transistors, and completely removes the chemical residues from the surface of the graphene channel as evidenced by x-ray photoelectron spectroscopy.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4881886</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CHEMICAL VAPOR DEPOSITION ; CLEANING ; Contaminants ; COPPER ; DAMAGE ; DEPOSITS ; ELECTRON BEAMS ; Electronic devices ; ELECTRONIC EQUIPMENT ; EVAPORATION ; FIELD EFFECT TRANSISTORS ; GRAPHENE ; LAYERS ; NANOSCIENCE AND NANOTECHNOLOGY ; Organic chemistry ; PROCESSING ; RAMAN SPECTROSCOPY ; RESIDUES ; Semiconductor devices ; Spectrum analysis ; SURFACES ; THIN FILMS ; TITANIUM ; X ray spectra ; X-RAY PHOTOELECTRON SPECTROSCOPY</subject><ispartof>Applied physics letters, 2014-06, Vol.104 (22)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-3daed47a62da92567adc0047eb1b51691260cb39668719cb4bae27c356de51f03</citedby><cites>FETCH-LOGICAL-c320t-3daed47a62da92567adc0047eb1b51691260cb39668719cb4bae27c356de51f03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22300274$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Joiner, C. A.</creatorcontrib><creatorcontrib>Roy, T.</creatorcontrib><creatorcontrib>Hesabi, Z. R.</creatorcontrib><creatorcontrib>Chakrabarti, B.</creatorcontrib><creatorcontrib>Vogel, E. M.</creatorcontrib><title>Cleaning graphene with a titanium sacrificial layer</title><title>Applied physics letters</title><description>Graphene is a promising material for future electronic applications and chemical vapor deposition of graphene on copper is a promising method for synthesizing graphene on the wafer scale. The processing of such graphene films into electronic devices introduces a variety of contaminants which can be difficult to remove. An approach to cleaning residues from the graphene channel is presented in which a thin layer of titanium is deposited via thermal e-beam evaporation and immediately removed. This procedure does not damage the graphene as evidenced by Raman spectroscopy, greatly enhances the electrical performance of the fabricated graphene field effect transistors, and completely removes the chemical residues from the surface of the graphene channel as evidenced by x-ray photoelectron spectroscopy.</description><subject>Applied physics</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CLEANING</subject><subject>Contaminants</subject><subject>COPPER</subject><subject>DAMAGE</subject><subject>DEPOSITS</subject><subject>ELECTRON BEAMS</subject><subject>Electronic devices</subject><subject>ELECTRONIC EQUIPMENT</subject><subject>EVAPORATION</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>GRAPHENE</subject><subject>LAYERS</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>Organic chemistry</subject><subject>PROCESSING</subject><subject>RAMAN SPECTROSCOPY</subject><subject>RESIDUES</subject><subject>Semiconductor devices</subject><subject>Spectrum analysis</subject><subject>SURFACES</subject><subject>THIN FILMS</subject><subject>TITANIUM</subject><subject>X ray spectra</subject><subject>X-RAY PHOTOELECTRON SPECTROSCOPY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkEtLAzEUhYMoWKsL_8GAKxdT782dPGYpxRcU3Og6ZDKZNmU6U5MU6b93pIKrw-F8nHs5jN0iLBAkPeCi0hq1lmdshqBUSYj6nM0AgEpZC7xkVyltJys40YzRsvd2CMO6WEe73_jBF98hbwpb5JCn4LArknUxdMEF2xe9Pfp4zS462yd_86dz9vn89LF8LVfvL2_Lx1XpiEMuqbW-rZSVvLU1F1LZ1gFUyjfYCJQ1cgmuoVpKrbB2TdVYz5UjIVsvsAOas7tT75hyMMmF7N3GjcPgXTacEwBX1T-1j-PXwadstuMhDtNjhk8nhCYlaKLuT5SLY0rRd2Yfw87Go0Ewv8sZNH_L0Q8gfV2d</recordid><startdate>20140602</startdate><enddate>20140602</enddate><creator>Joiner, C. A.</creator><creator>Roy, T.</creator><creator>Hesabi, Z. R.</creator><creator>Chakrabarti, B.</creator><creator>Vogel, E. M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140602</creationdate><title>Cleaning graphene with a titanium sacrificial layer</title><author>Joiner, C. A. ; Roy, T. ; Hesabi, Z. R. ; Chakrabarti, B. ; Vogel, E. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-3daed47a62da92567adc0047eb1b51691260cb39668719cb4bae27c356de51f03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>CLEANING</topic><topic>Contaminants</topic><topic>COPPER</topic><topic>DAMAGE</topic><topic>DEPOSITS</topic><topic>ELECTRON BEAMS</topic><topic>Electronic devices</topic><topic>ELECTRONIC EQUIPMENT</topic><topic>EVAPORATION</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>GRAPHENE</topic><topic>LAYERS</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>Organic chemistry</topic><topic>PROCESSING</topic><topic>RAMAN SPECTROSCOPY</topic><topic>RESIDUES</topic><topic>Semiconductor devices</topic><topic>Spectrum analysis</topic><topic>SURFACES</topic><topic>THIN FILMS</topic><topic>TITANIUM</topic><topic>X ray spectra</topic><topic>X-RAY PHOTOELECTRON SPECTROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Joiner, C. A.</creatorcontrib><creatorcontrib>Roy, T.</creatorcontrib><creatorcontrib>Hesabi, Z. R.</creatorcontrib><creatorcontrib>Chakrabarti, B.</creatorcontrib><creatorcontrib>Vogel, E. M.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Joiner, C. A.</au><au>Roy, T.</au><au>Hesabi, Z. R.</au><au>Chakrabarti, B.</au><au>Vogel, E. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cleaning graphene with a titanium sacrificial layer</atitle><jtitle>Applied physics letters</jtitle><date>2014-06-02</date><risdate>2014</risdate><volume>104</volume><issue>22</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Graphene is a promising material for future electronic applications and chemical vapor deposition of graphene on copper is a promising method for synthesizing graphene on the wafer scale. The processing of such graphene films into electronic devices introduces a variety of contaminants which can be difficult to remove. An approach to cleaning residues from the graphene channel is presented in which a thin layer of titanium is deposited via thermal e-beam evaporation and immediately removed. This procedure does not damage the graphene as evidenced by Raman spectroscopy, greatly enhances the electrical performance of the fabricated graphene field effect transistors, and completely removes the chemical residues from the surface of the graphene channel as evidenced by x-ray photoelectron spectroscopy.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4881886</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2014-06, Vol.104 (22) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22300274 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics CHEMICAL VAPOR DEPOSITION CLEANING Contaminants COPPER DAMAGE DEPOSITS ELECTRON BEAMS Electronic devices ELECTRONIC EQUIPMENT EVAPORATION FIELD EFFECT TRANSISTORS GRAPHENE LAYERS NANOSCIENCE AND NANOTECHNOLOGY Organic chemistry PROCESSING RAMAN SPECTROSCOPY RESIDUES Semiconductor devices Spectrum analysis SURFACES THIN FILMS TITANIUM X ray spectra X-RAY PHOTOELECTRON SPECTROSCOPY |
| title | Cleaning graphene with a titanium sacrificial layer |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T23%3A24%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Cleaning%20graphene%20with%20a%20titanium%20sacrificial%20layer&rft.jtitle=Applied%20physics%20letters&rft.au=Joiner,%20C.%20A.&rft.date=2014-06-02&rft.volume=104&rft.issue=22&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4881886&rft_dat=%3Cproquest_osti_%3E2126583753%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2126583753&rft_id=info:pmid/&rfr_iscdi=true |