Growth and conduction mechanism of As-doped p-type ZnO thin films deposited by MOCVD

[Display omitted] ► P-type As-doped ZnO thin films was fabricated by MOCVD after post-growth annealing. ► The formation mechanism of p-ZnO with high hole concentration above 1019cm−3 was elucidated. ► Besides AsZn–2VZn complex, C impurities also played an important role in realizing p-ZnO. ► The for...

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Veröffentlicht in:	Materials research bulletin 2013-03, Vol.48 (3), p.1239-1243
Hauptverfasser:	Ma, Y., Gao, Q., Wu, G.G., Li, W.C., Gao, F.B., Yin, J.Z., Zhang, B.L., Du, G.T.
Format:	Artikel
Sprache:	eng
Schlagworte:	A. Thin films ANNEALING B. Vapor deposition C. Photoelectron spectroscopy CARBON CHEMICAL VAPOR DEPOSITION CONCENTRATION RATIO D. Electrical properties DEPOSITS DOPED MATERIALS MATERIALS SCIENCE ORGANOMETALLIC COMPOUNDS OXYGEN PHOTOEMISSION THIN FILMS X-RAY PHOTOELECTRON SPECTROSCOPY ZINC OXIDES
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