Ultra-broadband terahertz time-domain ellipsometric spectroscopy utilizing GaP and GaSe emitters and an epitaxial layer transferred photoconductive detector

We present a reflection-type ultra-broadband terahertz (THz) time-domain spectroscopic ellipsometry system covering the frequency range of 0.5–30 THz. GaP (110) and z-cut GaSe crystals are used as emitters to generate the THz and mid-infrared pulses, respectively, and a photoconductive antenna switc...

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Veröffentlicht in:	Applied physics letters 2014-02, Vol.104 (5)
Hauptverfasser:	Yamashita, Masatsugu, Takahashi, Hideki, Ouchi, Toshihiko, Otani, Chiko
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Broadband CARRIER DENSITY CARRIER MOBILITY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTALS ELLIPSOMETRY Emitters Epitaxial growth EPITAXY FREQUENCY DEPENDENCE GALLIUM ARSENIDES GALLIUM PHOSPHIDES GALLIUM SELENIDES Hall effect INDIUM ARSENIDES Indium tin oxides LAYERS P-TYPE CONDUCTORS PHOTOCONDUCTIVITY Rangefinding Silicon substrates Spectroellipsometry SPECTROSCOPY SUBSTRATES TEMPERATURE DEPENDENCE THIN FILMS THZ RANGE Time domain analysis TIN OXIDES
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