Ultra-broadband terahertz time-domain ellipsometric spectroscopy utilizing GaP and GaSe emitters and an epitaxial layer transferred photoconductive detector
We present a reflection-type ultra-broadband terahertz (THz) time-domain spectroscopic ellipsometry system covering the frequency range of 0.5–30 THz. GaP (110) and z-cut GaSe crystals are used as emitters to generate the THz and mid-infrared pulses, respectively, and a photoconductive antenna switc...
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| Veröffentlicht in: | Applied physics letters 2014-02, Vol.104 (5) |
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| container_title | Applied physics letters |
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| creator | Yamashita, Masatsugu Takahashi, Hideki Ouchi, Toshihiko Otani, Chiko |
| description | We present a reflection-type ultra-broadband terahertz (THz) time-domain spectroscopic ellipsometry system covering the frequency range of 0.5–30 THz. GaP (110) and z-cut GaSe crystals are used as emitters to generate the THz and mid-infrared pulses, respectively, and a photoconductive antenna switch using a low-temperature grown GaAs epitaxial layer transferred on Si substrate was used as a detector. By changing the emitter between the GaP and GaSe crystals, the measurable frequency range can be easily switched from the 0.5–7.8 THz range to the 7.8–30 THz range without additional optical alignment. We demonstrated the measurement of the dielectric function in a p-type InAs wafer and the optical conductivity of an indium tin oxide (ITO) thin film. The obtained carrier density and the mobility of the ITO thin film show good agreement with that obtained by the Hall measurement. |
| doi_str_mv | 10.1063/1.4862974 |
| format | Article |
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GaP (110) and z-cut GaSe crystals are used as emitters to generate the THz and mid-infrared pulses, respectively, and a photoconductive antenna switch using a low-temperature grown GaAs epitaxial layer transferred on Si substrate was used as a detector. By changing the emitter between the GaP and GaSe crystals, the measurable frequency range can be easily switched from the 0.5–7.8 THz range to the 7.8–30 THz range without additional optical alignment. We demonstrated the measurement of the dielectric function in a p-type InAs wafer and the optical conductivity of an indium tin oxide (ITO) thin film. The obtained carrier density and the mobility of the ITO thin film show good agreement with that obtained by the Hall measurement.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4862974</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Broadband ; CARRIER DENSITY ; CARRIER MOBILITY ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTALS ; ELLIPSOMETRY ; Emitters ; Epitaxial growth ; EPITAXY ; FREQUENCY DEPENDENCE ; GALLIUM ARSENIDES ; GALLIUM PHOSPHIDES ; GALLIUM SELENIDES ; Hall effect ; INDIUM ARSENIDES ; Indium tin oxides ; LAYERS ; P-TYPE CONDUCTORS ; PHOTOCONDUCTIVITY ; Rangefinding ; Silicon substrates ; Spectroellipsometry ; SPECTROSCOPY ; SUBSTRATES ; TEMPERATURE DEPENDENCE ; THIN FILMS ; THZ RANGE ; Time domain analysis ; TIN OXIDES</subject><ispartof>Applied physics letters, 2014-02, Vol.104 (5)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-294b0a36eca70e4feaf847f9a19daef6d14c64533667eae5a59c68e10fe0f61f3</citedby><cites>FETCH-LOGICAL-c351t-294b0a36eca70e4feaf847f9a19daef6d14c64533667eae5a59c68e10fe0f61f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,781,785,886,27929,27930</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22283266$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Yamashita, Masatsugu</creatorcontrib><creatorcontrib>Takahashi, Hideki</creatorcontrib><creatorcontrib>Ouchi, Toshihiko</creatorcontrib><creatorcontrib>Otani, Chiko</creatorcontrib><title>Ultra-broadband terahertz time-domain ellipsometric spectroscopy utilizing GaP and GaSe emitters and an epitaxial layer transferred photoconductive detector</title><title>Applied physics letters</title><description>We present a reflection-type ultra-broadband terahertz (THz) time-domain spectroscopic ellipsometry system covering the frequency range of 0.5–30 THz. GaP (110) and z-cut GaSe crystals are used as emitters to generate the THz and mid-infrared pulses, respectively, and a photoconductive antenna switch using a low-temperature grown GaAs epitaxial layer transferred on Si substrate was used as a detector. By changing the emitter between the GaP and GaSe crystals, the measurable frequency range can be easily switched from the 0.5–7.8 THz range to the 7.8–30 THz range without additional optical alignment. We demonstrated the measurement of the dielectric function in a p-type InAs wafer and the optical conductivity of an indium tin oxide (ITO) thin film. The obtained carrier density and the mobility of the ITO thin film show good agreement with that obtained by the Hall measurement.</description><subject>Applied physics</subject><subject>Broadband</subject><subject>CARRIER DENSITY</subject><subject>CARRIER MOBILITY</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTALS</subject><subject>ELLIPSOMETRY</subject><subject>Emitters</subject><subject>Epitaxial growth</subject><subject>EPITAXY</subject><subject>FREQUENCY DEPENDENCE</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM PHOSPHIDES</subject><subject>GALLIUM SELENIDES</subject><subject>Hall effect</subject><subject>INDIUM ARSENIDES</subject><subject>Indium tin oxides</subject><subject>LAYERS</subject><subject>P-TYPE CONDUCTORS</subject><subject>PHOTOCONDUCTIVITY</subject><subject>Rangefinding</subject><subject>Silicon substrates</subject><subject>Spectroellipsometry</subject><subject>SPECTROSCOPY</subject><subject>SUBSTRATES</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>THIN FILMS</subject><subject>THZ RANGE</subject><subject>Time domain analysis</subject><subject>TIN OXIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkVtLxDAQhYMouF4e_AcBn3zomkubto8iugqCgu5zmE0nbqRtapIV19_ijzVewKdhhsN3DmcIOeFszpmS53xeNkq0dblDZpzVdSE5b3bJjDEmC9VWfJ8cxPiS10pIOSOfyz4FKFbBQ7eCsaMJA6wxpA-a3IBF5wdwI8W-d1P0A6bgDI0TmhR8NH7a0k1yvftw4zNdwAP9RizgESkOLmVW_LlAJkwuwbuDnvawxUCz6xgthoAdndY-eePHbmOSe0PaYcoGPhyRPQt9xOO_eUiW11dPlzfF3f3i9vLirjCy4qkQbbliIBUaqBmWFsE2ZW1b4G0HaFXHS6PKSkqlagSsoGqNapAzi8wqbuUhOf3l-picjsZl-3XOM-YUWgjRSKHUv2oK_nWDMekXvwljDqYFF3XNWe46q85-VSYXFANaPQU3QNhqzvT3izTXfy-SXw2Qh0U</recordid><startdate>20140203</startdate><enddate>20140203</enddate><creator>Yamashita, Masatsugu</creator><creator>Takahashi, Hideki</creator><creator>Ouchi, Toshihiko</creator><creator>Otani, Chiko</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140203</creationdate><title>Ultra-broadband terahertz time-domain ellipsometric spectroscopy utilizing GaP and GaSe emitters and an epitaxial layer transferred photoconductive detector</title><author>Yamashita, Masatsugu ; Takahashi, Hideki ; Ouchi, Toshihiko ; Otani, Chiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-294b0a36eca70e4feaf847f9a19daef6d14c64533667eae5a59c68e10fe0f61f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Broadband</topic><topic>CARRIER DENSITY</topic><topic>CARRIER MOBILITY</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTALS</topic><topic>ELLIPSOMETRY</topic><topic>Emitters</topic><topic>Epitaxial growth</topic><topic>EPITAXY</topic><topic>FREQUENCY DEPENDENCE</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM PHOSPHIDES</topic><topic>GALLIUM SELENIDES</topic><topic>Hall effect</topic><topic>INDIUM ARSENIDES</topic><topic>Indium tin oxides</topic><topic>LAYERS</topic><topic>P-TYPE CONDUCTORS</topic><topic>PHOTOCONDUCTIVITY</topic><topic>Rangefinding</topic><topic>Silicon substrates</topic><topic>Spectroellipsometry</topic><topic>SPECTROSCOPY</topic><topic>SUBSTRATES</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>THIN FILMS</topic><topic>THZ RANGE</topic><topic>Time domain analysis</topic><topic>TIN OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yamashita, Masatsugu</creatorcontrib><creatorcontrib>Takahashi, Hideki</creatorcontrib><creatorcontrib>Ouchi, Toshihiko</creatorcontrib><creatorcontrib>Otani, Chiko</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yamashita, Masatsugu</au><au>Takahashi, Hideki</au><au>Ouchi, Toshihiko</au><au>Otani, Chiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultra-broadband terahertz time-domain ellipsometric spectroscopy utilizing GaP and GaSe emitters and an epitaxial layer transferred photoconductive detector</atitle><jtitle>Applied physics letters</jtitle><date>2014-02-03</date><risdate>2014</risdate><volume>104</volume><issue>5</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We present a reflection-type ultra-broadband terahertz (THz) time-domain spectroscopic ellipsometry system covering the frequency range of 0.5–30 THz. GaP (110) and z-cut GaSe crystals are used as emitters to generate the THz and mid-infrared pulses, respectively, and a photoconductive antenna switch using a low-temperature grown GaAs epitaxial layer transferred on Si substrate was used as a detector. By changing the emitter between the GaP and GaSe crystals, the measurable frequency range can be easily switched from the 0.5–7.8 THz range to the 7.8–30 THz range without additional optical alignment. We demonstrated the measurement of the dielectric function in a p-type InAs wafer and the optical conductivity of an indium tin oxide (ITO) thin film. The obtained carrier density and the mobility of the ITO thin film show good agreement with that obtained by the Hall measurement.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4862974</doi></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Broadband CARRIER DENSITY CARRIER MOBILITY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTALS ELLIPSOMETRY Emitters Epitaxial growth EPITAXY FREQUENCY DEPENDENCE GALLIUM ARSENIDES GALLIUM PHOSPHIDES GALLIUM SELENIDES Hall effect INDIUM ARSENIDES Indium tin oxides LAYERS P-TYPE CONDUCTORS PHOTOCONDUCTIVITY Rangefinding Silicon substrates Spectroellipsometry SPECTROSCOPY SUBSTRATES TEMPERATURE DEPENDENCE THIN FILMS THZ RANGE Time domain analysis TIN OXIDES |
| title | Ultra-broadband terahertz time-domain ellipsometric spectroscopy utilizing GaP and GaSe emitters and an epitaxial layer transferred photoconductive detector |
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