Zr/oxidized diamond interface for high power Schottky diodes

High forward current density of 103 A/cm2 (at 6 V) and a breakdown field larger than 7.7 MV/cm for diamond diodes with a pseudo-vertical architecture, are demonstrated. The power figure of merit is above 244 MW/cm2 and the relative standard deviation of the reverse current density over 83 diodes is...

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Veröffentlicht in:	Applied physics letters 2014-02, Vol.104 (5)
Hauptverfasser:	Traoré, A., Muret, P., Fiori, A., Eon, D., Gheeraert, E., Pernot, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics BORON Condensed Matter CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CURRENT DENSITY DIAMONDS DOPED MATERIALS Electric power Engineering Sciences Epitaxial growth EPITAXY Figure of merit INTERFACES LAYERS Materials Science Physics SCHOTTKY BARRIER DIODES Schottky diodes SUBSTRATES SURFACES ZIRCONIUM
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