The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates
We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the...
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| Veröffentlicht in: | Applied physics letters 2014-02, Vol.104 (6) |
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| container_issue | 6 |
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| container_title | Applied physics letters |
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| creator | Ok, Kyung-Chul Ko Park, Sang-Hee Hwang, Chi-Sun Kim, H. Soo Shin, Hyun Bae, Jonguk Park, Jin-Seong |
| description | We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiNx/AlOx buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiNx or SiOx buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional. |
| doi_str_mv | 10.1063/1.4864617 |
| format | Article |
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The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiNx/AlOx buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiNx or SiOx buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4864617</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ANNEALING ; Applied physics ; Buffer layers ; COMPARATIVE EVALUATIONS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Diffusion barriers ; Diffusion layers ; FABRICATION ; Gallium ; GALLIUM COMPOUNDS ; GLASS ; IMIDES ; INDIUM COMPOUNDS ; Indium gallium zinc oxide ; LAYERS ; ORGANIC POLYMERS ; PHASE STABILITY ; Radius of curvature ; Semiconductor devices ; SILICON OXIDES ; Stability ; SUBSTRATES ; Thin film transistors ; THIN FILMS ; TRANSISTORS ; Zinc oxide ; ZINC OXIDES</subject><ispartof>Applied physics letters, 2014-02, Vol.104 (6)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-ac13bf8a6797fe4e25c37dc76d2662f63fde1b1a476c895d2785f62f0ac35aad3</citedby><cites>FETCH-LOGICAL-c351t-ac13bf8a6797fe4e25c37dc76d2662f63fde1b1a476c895d2785f62f0ac35aad3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22283162$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ok, Kyung-Chul</creatorcontrib><creatorcontrib>Ko Park, Sang-Hee</creatorcontrib><creatorcontrib>Hwang, Chi-Sun</creatorcontrib><creatorcontrib>Kim, H.</creatorcontrib><creatorcontrib>Soo Shin, Hyun</creatorcontrib><creatorcontrib>Bae, Jonguk</creatorcontrib><creatorcontrib>Park, Jin-Seong</creatorcontrib><title>The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates</title><title>Applied physics letters</title><description>We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiNx/AlOx buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiNx or SiOx buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional.</description><subject>ANNEALING</subject><subject>Applied physics</subject><subject>Buffer layers</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Diffusion barriers</subject><subject>Diffusion layers</subject><subject>FABRICATION</subject><subject>Gallium</subject><subject>GALLIUM COMPOUNDS</subject><subject>GLASS</subject><subject>IMIDES</subject><subject>INDIUM COMPOUNDS</subject><subject>Indium gallium zinc oxide</subject><subject>LAYERS</subject><subject>ORGANIC POLYMERS</subject><subject>PHASE STABILITY</subject><subject>Radius of curvature</subject><subject>Semiconductor devices</subject><subject>SILICON OXIDES</subject><subject>Stability</subject><subject>SUBSTRATES</subject><subject>Thin film transistors</subject><subject>THIN FILMS</subject><subject>TRANSISTORS</subject><subject>Zinc oxide</subject><subject>ZINC OXIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFUctKAzEUDaJgrS78g4ArF1MnyUwyXUrRWih0UzduQiZzQ1Nmkpqk4Kz8dVNacHUf58G9HIQeSTkjJWcvZFY1vOJEXKEJKYUoGCHNNZqUZckKPq_JLbqLcZ_HmjI2Qb_bHWAwBnSK2BvcHnMfcK9GCHnhcMr4AYLxYVBOA1auwzGp1vY2jSeF6eHHtj3glVuqL7fJCuuwsf2AU1Au2pj82erg-9EOtgMcj23MYIJ4j26M6iM8XOoUfb6_bRcfxXqzXC1e14VmNUmF0oS1plFczIWBCmitmei04B3lnBrOTAekJaoSXDfzuqOiqU0GSpX1SnVsip7Ovj4mK6O2CfROe-fy45JS2jDC6T_rEPz3EWKSe38MLh8mKaFCVHVdscx6PrN08DEGMPIQ7KDCKEkpTylIIi8psD9cv3rS</recordid><startdate>20140210</startdate><enddate>20140210</enddate><creator>Ok, Kyung-Chul</creator><creator>Ko Park, Sang-Hee</creator><creator>Hwang, Chi-Sun</creator><creator>Kim, H.</creator><creator>Soo Shin, Hyun</creator><creator>Bae, Jonguk</creator><creator>Park, Jin-Seong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140210</creationdate><title>The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates</title><author>Ok, Kyung-Chul ; Ko Park, Sang-Hee ; Hwang, Chi-Sun ; Kim, H. ; Soo Shin, Hyun ; Bae, Jonguk ; Park, Jin-Seong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-ac13bf8a6797fe4e25c37dc76d2662f63fde1b1a476c895d2785f62f0ac35aad3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ANNEALING</topic><topic>Applied physics</topic><topic>Buffer layers</topic><topic>COMPARATIVE EVALUATIONS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Diffusion barriers</topic><topic>Diffusion layers</topic><topic>FABRICATION</topic><topic>Gallium</topic><topic>GALLIUM COMPOUNDS</topic><topic>GLASS</topic><topic>IMIDES</topic><topic>INDIUM COMPOUNDS</topic><topic>Indium gallium zinc oxide</topic><topic>LAYERS</topic><topic>ORGANIC POLYMERS</topic><topic>PHASE STABILITY</topic><topic>Radius of curvature</topic><topic>Semiconductor devices</topic><topic>SILICON OXIDES</topic><topic>Stability</topic><topic>SUBSTRATES</topic><topic>Thin film transistors</topic><topic>THIN FILMS</topic><topic>TRANSISTORS</topic><topic>Zinc oxide</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ok, Kyung-Chul</creatorcontrib><creatorcontrib>Ko Park, Sang-Hee</creatorcontrib><creatorcontrib>Hwang, Chi-Sun</creatorcontrib><creatorcontrib>Kim, H.</creatorcontrib><creatorcontrib>Soo Shin, Hyun</creatorcontrib><creatorcontrib>Bae, Jonguk</creatorcontrib><creatorcontrib>Park, Jin-Seong</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ok, Kyung-Chul</au><au>Ko Park, Sang-Hee</au><au>Hwang, Chi-Sun</au><au>Kim, H.</au><au>Soo Shin, Hyun</au><au>Bae, Jonguk</au><au>Park, Jin-Seong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates</atitle><jtitle>Applied physics letters</jtitle><date>2014-02-10</date><risdate>2014</risdate><volume>104</volume><issue>6</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiNx/AlOx buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiNx or SiOx buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4864617</doi></addata></record> |
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| ispartof | Applied physics letters, 2014-02, Vol.104 (6) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | ANNEALING Applied physics Buffer layers COMPARATIVE EVALUATIONS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Diffusion barriers Diffusion layers FABRICATION Gallium GALLIUM COMPOUNDS GLASS IMIDES INDIUM COMPOUNDS Indium gallium zinc oxide LAYERS ORGANIC POLYMERS PHASE STABILITY Radius of curvature Semiconductor devices SILICON OXIDES Stability SUBSTRATES Thin film transistors THIN FILMS TRANSISTORS Zinc oxide ZINC OXIDES |
| title | The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates |
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