Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current lin...
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| Veröffentlicht in: | Applied physics letters 2014-01, Vol.104 (4) |
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| container_title | Applied physics letters |
| container_volume | 104 |
| creator | Cubukcu, Murat Boulle, Olivier Drouard, Marc Garello, Kevin Onur Avci, Can Mihai Miron, Ioan Langer, Juergen Ocker, Berthold Gambardella, Pietro Gaudin, Gilles |
| description | We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 1011 A/m2 in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell. |
| doi_str_mv | 10.1063/1.4863407 |
| format | Article |
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The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 1011 A/m2 in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4863407</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; COBALT BORIDES ; Computer memory ; Condensed Matter ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Current pulses ; ELECTRIC CURRENTS ; HETEROJUNCTIONS ; INTERFACES ; IRON COMPOUNDS ; L-S COUPLING ; LAYERS ; MAGNESIUM OXIDES ; MAGNETIC FIELDS ; Magnetic switching ; Magnetism ; MAGNETIZATION ; MAGNETORESISTANCE ; Magnetoresistivity ; Materials Science ; Physics ; TANTALUM ; TORQUE ; TUNNEL EFFECT ; Tunnel junctions</subject><ispartof>Applied physics letters, 2014-01, Vol.104 (4)</ispartof><rights>2014 AIP Publishing LLC.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-5d62f4c6765c6e425bffe9e1f762ed87f19ba9267e5d5a49edff30cc3ffc0bc43</citedby><cites>FETCH-LOGICAL-c385t-5d62f4c6765c6e425bffe9e1f762ed87f19ba9267e5d5a49edff30cc3ffc0bc43</cites><orcidid>0000-0002-8538-7907 ; 0000-0003-0236-322X ; 0000-0002-1276-0635</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02023100$$DView record in HAL$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/22280535$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Cubukcu, Murat</creatorcontrib><creatorcontrib>Boulle, Olivier</creatorcontrib><creatorcontrib>Drouard, Marc</creatorcontrib><creatorcontrib>Garello, Kevin</creatorcontrib><creatorcontrib>Onur Avci, Can</creatorcontrib><creatorcontrib>Mihai Miron, Ioan</creatorcontrib><creatorcontrib>Langer, Juergen</creatorcontrib><creatorcontrib>Ocker, Berthold</creatorcontrib><creatorcontrib>Gambardella, Pietro</creatorcontrib><creatorcontrib>Gaudin, Gilles</creatorcontrib><title>Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction</title><title>Applied physics letters</title><description>We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 1011 A/m2 in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.</description><subject>Applied physics</subject><subject>COBALT BORIDES</subject><subject>Computer memory</subject><subject>Condensed Matter</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Current pulses</subject><subject>ELECTRIC CURRENTS</subject><subject>HETEROJUNCTIONS</subject><subject>INTERFACES</subject><subject>IRON COMPOUNDS</subject><subject>L-S COUPLING</subject><subject>LAYERS</subject><subject>MAGNESIUM OXIDES</subject><subject>MAGNETIC FIELDS</subject><subject>Magnetic switching</subject><subject>Magnetism</subject><subject>MAGNETIZATION</subject><subject>MAGNETORESISTANCE</subject><subject>Magnetoresistivity</subject><subject>Materials Science</subject><subject>Physics</subject><subject>TANTALUM</subject><subject>TORQUE</subject><subject>TUNNEL EFFECT</subject><subject>Tunnel junctions</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkUlLBDEQhYMoOC4H_0HAk4fWLJ2k-ziIGwx4UM8hk67MZOhJ2iSt6K-3B7dTUcWrj3r1EDqj5JISya_oZd1IXhO1h2aUKFVxSpt9NCOE8Eq2gh6io5w3UysY5zPUPQ0-VDEtfcElptcR8NasAhT_aYqPAed3X-zahxWODhtc1gmgKpC2PpgeD5AGCJ23Y2_S76bFZQwBerwZg91BTtCBM32G0596jF5ub56v76vF493D9XxRWd6IUolOMldbqaSwEmomls5BC9QpyaBrlKPt0rRMKhCdMHULnXOcWMuds2Rpa36Mzr-5MRevs_UF7NrG6RZbNGOsIYKLSXXxrVqbXg_Jb0360NF4fT9f6N2MMMI4JeSN_hOHFKff5KI3cUyT86wZZUqJWrDmn2hTzDmB-8NSonexaKp_YuFfddx_7g</recordid><startdate>20140127</startdate><enddate>20140127</enddate><creator>Cubukcu, Murat</creator><creator>Boulle, Olivier</creator><creator>Drouard, Marc</creator><creator>Garello, Kevin</creator><creator>Onur Avci, Can</creator><creator>Mihai Miron, Ioan</creator><creator>Langer, Juergen</creator><creator>Ocker, Berthold</creator><creator>Gambardella, Pietro</creator><creator>Gaudin, Gilles</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>1XC</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-8538-7907</orcidid><orcidid>https://orcid.org/0000-0003-0236-322X</orcidid><orcidid>https://orcid.org/0000-0002-1276-0635</orcidid></search><sort><creationdate>20140127</creationdate><title>Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction</title><author>Cubukcu, Murat ; Boulle, Olivier ; Drouard, Marc ; Garello, Kevin ; Onur Avci, Can ; Mihai Miron, Ioan ; Langer, Juergen ; Ocker, Berthold ; Gambardella, Pietro ; Gaudin, Gilles</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-5d62f4c6765c6e425bffe9e1f762ed87f19ba9267e5d5a49edff30cc3ffc0bc43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>COBALT BORIDES</topic><topic>Computer memory</topic><topic>Condensed Matter</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Current pulses</topic><topic>ELECTRIC CURRENTS</topic><topic>HETEROJUNCTIONS</topic><topic>INTERFACES</topic><topic>IRON COMPOUNDS</topic><topic>L-S COUPLING</topic><topic>LAYERS</topic><topic>MAGNESIUM OXIDES</topic><topic>MAGNETIC FIELDS</topic><topic>Magnetic switching</topic><topic>Magnetism</topic><topic>MAGNETIZATION</topic><topic>MAGNETORESISTANCE</topic><topic>Magnetoresistivity</topic><topic>Materials Science</topic><topic>Physics</topic><topic>TANTALUM</topic><topic>TORQUE</topic><topic>TUNNEL EFFECT</topic><topic>Tunnel junctions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cubukcu, Murat</creatorcontrib><creatorcontrib>Boulle, Olivier</creatorcontrib><creatorcontrib>Drouard, Marc</creatorcontrib><creatorcontrib>Garello, Kevin</creatorcontrib><creatorcontrib>Onur Avci, Can</creatorcontrib><creatorcontrib>Mihai Miron, Ioan</creatorcontrib><creatorcontrib>Langer, Juergen</creatorcontrib><creatorcontrib>Ocker, Berthold</creatorcontrib><creatorcontrib>Gambardella, Pietro</creatorcontrib><creatorcontrib>Gaudin, Gilles</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cubukcu, Murat</au><au>Boulle, Olivier</au><au>Drouard, Marc</au><au>Garello, Kevin</au><au>Onur Avci, Can</au><au>Mihai Miron, Ioan</au><au>Langer, Juergen</au><au>Ocker, Berthold</au><au>Gambardella, Pietro</au><au>Gaudin, Gilles</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction</atitle><jtitle>Applied physics letters</jtitle><date>2014-01-27</date><risdate>2014</risdate><volume>104</volume><issue>4</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 1011 A/m2 in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4863407</doi><orcidid>https://orcid.org/0000-0002-8538-7907</orcidid><orcidid>https://orcid.org/0000-0003-0236-322X</orcidid><orcidid>https://orcid.org/0000-0002-1276-0635</orcidid></addata></record> |
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| ispartof | Applied physics letters, 2014-01, Vol.104 (4) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics COBALT BORIDES Computer memory Condensed Matter CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Current pulses ELECTRIC CURRENTS HETEROJUNCTIONS INTERFACES IRON COMPOUNDS L-S COUPLING LAYERS MAGNESIUM OXIDES MAGNETIC FIELDS Magnetic switching Magnetism MAGNETIZATION MAGNETORESISTANCE Magnetoresistivity Materials Science Physics TANTALUM TORQUE TUNNEL EFFECT Tunnel junctions |
| title | Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction |
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