Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, w...

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Veröffentlicht in:Applied physics letters 2014-01, Vol.104 (4)
Hauptverfasser: Jiménez, David, Cummings, Aron W., Chaves, Ferney, Van Tuan, Dinh, Kotakoski, Jani, Roche, Stephan
Format: Artikel
Sprache:eng
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Zusammenfassung:We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4863842