Impact of graphene polycrystallinity on the performance of graphene field-effect transistors
We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, w...
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Veröffentlicht in: | Applied physics letters 2014-01, Vol.104 (4) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4863842 |