III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics
The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We ha...
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| Veröffentlicht in: | Journal of applied physics 2014-02, Vol.115 (7) |
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| creator | Prucnal, Slawomir Zhou, Shengqiang Ou, Xin Facsko, Stefan Oskar Liedke, Maciej Bregolin, Felipe Liedke, Bartosz Grebing, Jochen Fritzsche, Monika Hübner, Rene Mücklich, Arndt Rebohle, Lars Helm, Manfred Turek, Marcin Drozdziel, Andrzej Skorupa, Wolfgang |
| description | The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures. |
| doi_str_mv | 10.1063/1.4865875 |
| format | Article |
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In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4865875</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ANNEALING ; Applied physics ; Chemical synthesis ; CMOS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Epitaxial growth ; EPITAXY ; Group III-V semiconductors ; HETEROJUNCTIONS ; INDIUM ARSENIDES ; ION BEAMS ; ION IMPLANTATION ; LAYERS ; Liquid phases ; LIQUIDS ; MICROSTRUCTURE ; Nanoelectronics ; Nanostructure ; NANOSTRUCTURES ; Optoelectronics ; Photonics ; SEMICONDUCTOR MATERIALS ; Semiconductors ; SILICON ; Silicon compounds ; Wafers</subject><ispartof>Journal of applied physics, 2014-02, Vol.115 (7)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-65b7562112a03a113f38bb818c7d3f987cdf88e0816c6b2c3e715c415211a1d83</citedby><cites>FETCH-LOGICAL-c285t-65b7562112a03a113f38bb818c7d3f987cdf88e0816c6b2c3e715c415211a1d83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,778,782,883,27911,27912</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22278032$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Prucnal, Slawomir</creatorcontrib><creatorcontrib>Zhou, Shengqiang</creatorcontrib><creatorcontrib>Ou, Xin</creatorcontrib><creatorcontrib>Facsko, Stefan</creatorcontrib><creatorcontrib>Oskar Liedke, Maciej</creatorcontrib><creatorcontrib>Bregolin, Felipe</creatorcontrib><creatorcontrib>Liedke, Bartosz</creatorcontrib><creatorcontrib>Grebing, Jochen</creatorcontrib><creatorcontrib>Fritzsche, Monika</creatorcontrib><creatorcontrib>Hübner, Rene</creatorcontrib><creatorcontrib>Mücklich, Arndt</creatorcontrib><creatorcontrib>Rebohle, Lars</creatorcontrib><creatorcontrib>Helm, Manfred</creatorcontrib><creatorcontrib>Turek, Marcin</creatorcontrib><creatorcontrib>Drozdziel, Andrzej</creatorcontrib><creatorcontrib>Skorupa, Wolfgang</creatorcontrib><title>III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics</title><title>Journal of applied physics</title><description>The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. 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Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures.</description><subject>ANNEALING</subject><subject>Applied physics</subject><subject>Chemical synthesis</subject><subject>CMOS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Epitaxial growth</subject><subject>EPITAXY</subject><subject>Group III-V semiconductors</subject><subject>HETEROJUNCTIONS</subject><subject>INDIUM ARSENIDES</subject><subject>ION BEAMS</subject><subject>ION IMPLANTATION</subject><subject>LAYERS</subject><subject>Liquid phases</subject><subject>LIQUIDS</subject><subject>MICROSTRUCTURE</subject><subject>Nanoelectronics</subject><subject>Nanostructure</subject><subject>NANOSTRUCTURES</subject><subject>Optoelectronics</subject><subject>Photonics</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>Semiconductors</subject><subject>SILICON</subject><subject>Silicon compounds</subject><subject>Wafers</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LAzEQhoMoWKsH_8GCJw_bZpJmM3uUanWh4MGPa8hmszRlm9Rke-i_N9KCMMx7eWZ4eAm5BzoDWvE5zBZYCZTigkyAYl1KIeglmVDKoMRa1tfkJqUtpQDI6wl5bpqm_J5_uCL4IrnBmeDLPM6nw6DHEIt9jj7EXZFXsTm20XWF1z7YwZoxBu9MuiVXvR6SvTvnlHytXj6Xb-X6_bVZPq1Lw1CMZSVaKSoGwDTlGoD3HNsWAY3seF-jNF2PaClCZaqWGW4lCLMAkU80dMin5OH0N6TRqWTcaM0mC_tsohhjEiln_9Q-hp-DTaPahkP0WUwxYFJyimyRqccTZWJIKdpe7aPb6XhUQNVflQrUuUr-CzOYYy8</recordid><startdate>20140221</startdate><enddate>20140221</enddate><creator>Prucnal, Slawomir</creator><creator>Zhou, Shengqiang</creator><creator>Ou, Xin</creator><creator>Facsko, Stefan</creator><creator>Oskar Liedke, Maciej</creator><creator>Bregolin, Felipe</creator><creator>Liedke, Bartosz</creator><creator>Grebing, Jochen</creator><creator>Fritzsche, Monika</creator><creator>Hübner, Rene</creator><creator>Mücklich, Arndt</creator><creator>Rebohle, Lars</creator><creator>Helm, Manfred</creator><creator>Turek, Marcin</creator><creator>Drozdziel, Andrzej</creator><creator>Skorupa, Wolfgang</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140221</creationdate><title>III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics</title><author>Prucnal, Slawomir ; Zhou, Shengqiang ; Ou, Xin ; Facsko, Stefan ; Oskar Liedke, Maciej ; Bregolin, Felipe ; Liedke, Bartosz ; Grebing, Jochen ; Fritzsche, Monika ; Hübner, Rene ; Mücklich, Arndt ; Rebohle, Lars ; Helm, Manfred ; Turek, Marcin ; Drozdziel, Andrzej ; Skorupa, Wolfgang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-65b7562112a03a113f38bb818c7d3f987cdf88e0816c6b2c3e715c415211a1d83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ANNEALING</topic><topic>Applied physics</topic><topic>Chemical synthesis</topic><topic>CMOS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Epitaxial growth</topic><topic>EPITAXY</topic><topic>Group III-V semiconductors</topic><topic>HETEROJUNCTIONS</topic><topic>INDIUM ARSENIDES</topic><topic>ION BEAMS</topic><topic>ION IMPLANTATION</topic><topic>LAYERS</topic><topic>Liquid phases</topic><topic>LIQUIDS</topic><topic>MICROSTRUCTURE</topic><topic>Nanoelectronics</topic><topic>Nanostructure</topic><topic>NANOSTRUCTURES</topic><topic>Optoelectronics</topic><topic>Photonics</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>Semiconductors</topic><topic>SILICON</topic><topic>Silicon compounds</topic><topic>Wafers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Prucnal, Slawomir</creatorcontrib><creatorcontrib>Zhou, Shengqiang</creatorcontrib><creatorcontrib>Ou, Xin</creatorcontrib><creatorcontrib>Facsko, Stefan</creatorcontrib><creatorcontrib>Oskar Liedke, Maciej</creatorcontrib><creatorcontrib>Bregolin, Felipe</creatorcontrib><creatorcontrib>Liedke, Bartosz</creatorcontrib><creatorcontrib>Grebing, Jochen</creatorcontrib><creatorcontrib>Fritzsche, Monika</creatorcontrib><creatorcontrib>Hübner, Rene</creatorcontrib><creatorcontrib>Mücklich, Arndt</creatorcontrib><creatorcontrib>Rebohle, Lars</creatorcontrib><creatorcontrib>Helm, Manfred</creatorcontrib><creatorcontrib>Turek, Marcin</creatorcontrib><creatorcontrib>Drozdziel, Andrzej</creatorcontrib><creatorcontrib>Skorupa, Wolfgang</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Prucnal, Slawomir</au><au>Zhou, Shengqiang</au><au>Ou, Xin</au><au>Facsko, Stefan</au><au>Oskar Liedke, Maciej</au><au>Bregolin, Felipe</au><au>Liedke, Bartosz</au><au>Grebing, Jochen</au><au>Fritzsche, Monika</au><au>Hübner, Rene</au><au>Mücklich, Arndt</au><au>Rebohle, Lars</au><au>Helm, Manfred</au><au>Turek, Marcin</au><au>Drozdziel, Andrzej</au><au>Skorupa, Wolfgang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics</atitle><jtitle>Journal of applied physics</jtitle><date>2014-02-21</date><risdate>2014</risdate><volume>115</volume><issue>7</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4865875</doi></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2014-02, Vol.115 (7) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | ANNEALING Applied physics Chemical synthesis CMOS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Epitaxial growth EPITAXY Group III-V semiconductors HETEROJUNCTIONS INDIUM ARSENIDES ION BEAMS ION IMPLANTATION LAYERS Liquid phases LIQUIDS MICROSTRUCTURE Nanoelectronics Nanostructure NANOSTRUCTURES Optoelectronics Photonics SEMICONDUCTOR MATERIALS Semiconductors SILICON Silicon compounds Wafers |
| title | III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics |
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