Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium
Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn0.97Al0.03O, 463 K for Zn0.94Al0.03Li0.03O, and 503 K for Zn0.91Al0.03Li0.03Mn0.03O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithi...
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| Veröffentlicht in: | Journal of applied physics 2014-03, Vol.115 (9) |
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| creator | Sivagamasundari, A. Chandrasekar, S. Pugaze, R. Rajagopan, S. Kannan, R. |
| description | Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn0.97Al0.03O, 463 K for Zn0.94Al0.03Li0.03O, and 503 K for Zn0.91Al0.03Li0.03Mn0.03O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM. |
| doi_str_mv | 10.1063/1.4867036 |
| format | Article |
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Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4867036</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ALUMINIUM COMPOUNDS ; Aluminum ; Applied physics ; Carrier density ; CONCENTRATION RATIO ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Conduction bands ; CORRELATIONS ; FERMI LEVEL ; FERROMAGNETISM ; Hexamethylenetetramine ; Ionization ; LITHIUM ; LITHIUM COMPOUNDS ; Manganese ; MANGANESE COMPOUNDS ; Metal/semiconductor transitions ; PHASE TRANSFORMATIONS ; PHOTOLUMINESCENCE ; Room temperature ; SEMICONDUCTOR MATERIALS ; Shrinkage ; SOL-GEL PROCESS ; Sol-gel processes ; TEMPERATURE DEPENDENCE ; TEMPERATURE RANGE 0273-0400 K ; UROTROPIN ; Zinc oxide ; ZINC OXIDES</subject><ispartof>Journal of applied physics, 2014-03, Vol.115 (9)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-978f5bf3adc358775471abe9dd4b7a409d8a8f45e4394d028a99e95e508399b3</citedby><cites>FETCH-LOGICAL-c285t-978f5bf3adc358775471abe9dd4b7a409d8a8f45e4394d028a99e95e508399b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22277948$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sivagamasundari, A.</creatorcontrib><creatorcontrib>Chandrasekar, S.</creatorcontrib><creatorcontrib>Pugaze, R.</creatorcontrib><creatorcontrib>Rajagopan, S.</creatorcontrib><creatorcontrib>Kannan, R.</creatorcontrib><title>Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium</title><title>Journal of applied physics</title><description>Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn0.97Al0.03O, 463 K for Zn0.94Al0.03Li0.03O, and 503 K for Zn0.91Al0.03Li0.03Mn0.03O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.</description><subject>ALUMINIUM COMPOUNDS</subject><subject>Aluminum</subject><subject>Applied physics</subject><subject>Carrier density</subject><subject>CONCENTRATION RATIO</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Conduction bands</subject><subject>CORRELATIONS</subject><subject>FERMI LEVEL</subject><subject>FERROMAGNETISM</subject><subject>Hexamethylenetetramine</subject><subject>Ionization</subject><subject>LITHIUM</subject><subject>LITHIUM COMPOUNDS</subject><subject>Manganese</subject><subject>MANGANESE COMPOUNDS</subject><subject>Metal/semiconductor transitions</subject><subject>PHASE TRANSFORMATIONS</subject><subject>PHOTOLUMINESCENCE</subject><subject>Room temperature</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>Shrinkage</subject><subject>SOL-GEL PROCESS</subject><subject>Sol-gel processes</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TEMPERATURE RANGE 0273-0400 K</subject><subject>UROTROPIN</subject><subject>Zinc oxide</subject><subject>ZINC OXIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkctKBDEQRYMoOD4W_kHAlYvWpLvTSZYivkBwMys3IZNUO5FOMiZpRf_AvzY6gpuqojh1qctF6ISSc0qG7oKe92LgpBt20IISIRvOGNlFC0Ja2gjJ5T46yPmFEEpFJxfoa7mG5PWEXQzuU5fasAt2NmCxh6KnJoN3Jv6sSky4JB2y-8V0sDjF6HEBv4Gky5wAj5BS9Po5QHHZV6l64d70BKFgGzdV9Sk8YhO387srazzV4mZ_hPZGPWU4_uuHaHlzvby6ax4eb--vLh8a0wpWGsnFyFZjp63pmOCc9ZzqFUhr-xXXPZFWaDH2DPpO9pa0QksJkgEj1a9cdYfodCsbc3EqG1fArKu_AKaotm05l734pzYpvs6Qi3qJcwr1L9XSlg9iEJJV6mxLmRRzTjCqTXJepw9FifqJQ1H1F0f3DVBKf0k</recordid><startdate>20140307</startdate><enddate>20140307</enddate><creator>Sivagamasundari, A.</creator><creator>Chandrasekar, S.</creator><creator>Pugaze, R.</creator><creator>Rajagopan, S.</creator><creator>Kannan, R.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140307</creationdate><title>Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium</title><author>Sivagamasundari, A. ; Chandrasekar, S. ; Pugaze, R. ; Rajagopan, S. ; Kannan, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-978f5bf3adc358775471abe9dd4b7a409d8a8f45e4394d028a99e95e508399b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ALUMINIUM COMPOUNDS</topic><topic>Aluminum</topic><topic>Applied physics</topic><topic>Carrier density</topic><topic>CONCENTRATION RATIO</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Conduction bands</topic><topic>CORRELATIONS</topic><topic>FERMI LEVEL</topic><topic>FERROMAGNETISM</topic><topic>Hexamethylenetetramine</topic><topic>Ionization</topic><topic>LITHIUM</topic><topic>LITHIUM COMPOUNDS</topic><topic>Manganese</topic><topic>MANGANESE COMPOUNDS</topic><topic>Metal/semiconductor transitions</topic><topic>PHASE TRANSFORMATIONS</topic><topic>PHOTOLUMINESCENCE</topic><topic>Room temperature</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>Shrinkage</topic><topic>SOL-GEL PROCESS</topic><topic>Sol-gel processes</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>TEMPERATURE RANGE 0273-0400 K</topic><topic>UROTROPIN</topic><topic>Zinc oxide</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sivagamasundari, A.</creatorcontrib><creatorcontrib>Chandrasekar, S.</creatorcontrib><creatorcontrib>Pugaze, R.</creatorcontrib><creatorcontrib>Rajagopan, S.</creatorcontrib><creatorcontrib>Kannan, R.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sivagamasundari, A.</au><au>Chandrasekar, S.</au><au>Pugaze, R.</au><au>Rajagopan, S.</au><au>Kannan, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium</atitle><jtitle>Journal of applied physics</jtitle><date>2014-03-07</date><risdate>2014</risdate><volume>115</volume><issue>9</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn0.97Al0.03O, 463 K for Zn0.94Al0.03Li0.03O, and 503 K for Zn0.91Al0.03Li0.03Mn0.03O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4867036</doi></addata></record> |
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| subjects | ALUMINIUM COMPOUNDS Aluminum Applied physics Carrier density CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Conduction bands CORRELATIONS FERMI LEVEL FERROMAGNETISM Hexamethylenetetramine Ionization LITHIUM LITHIUM COMPOUNDS Manganese MANGANESE COMPOUNDS Metal/semiconductor transitions PHASE TRANSFORMATIONS PHOTOLUMINESCENCE Room temperature SEMICONDUCTOR MATERIALS Shrinkage SOL-GEL PROCESS Sol-gel processes TEMPERATURE DEPENDENCE TEMPERATURE RANGE 0273-0400 K UROTROPIN Zinc oxide ZINC OXIDES |
| title | Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium |
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