Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending...

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Veröffentlicht in:	Journal of applied physics 2014-03, Vol.115 (9)
Hauptverfasser:	Yun, Min Ju, Kim, Hee-Dong, Man Hong, Seok, Hyun Park, Ju, Su Jeon, Dong, Geun Kim, Tae
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Computer memory CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CORRELATIONS Dependence ELECTRIC CURRENTS ELECTRIC FIELDS ELECTRIC POTENTIAL ELECTRONEGATIVITY Nanocrystals NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES NICKEL NICKEL NITRIDES Order parameters Physical properties PLATINUM POTENTIALS Random access memory Switching TITANIUM WORK FUNCTIONS
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