Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures
In this paper, a theory is developed to study the anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures. The inclined misfit dislocation, which differs from the well-known vertical threading dislocation, has a remarkabl...
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| Veröffentlicht in: | Journal of applied physics 2014-01, Vol.115 (4) |
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| creator | Jin, Dong-Dong Wang, Lian-shan Yang, Shao-Yan Zhang, Liu-Wan Li, Hui-jie Zhang, Heng Wang, Jian-xia Xiang, Ruo-fei Wei, Hong-yuan Jiao, Chun-mei Liu, Xiang-Lin Zhu, Qin-Sheng Wang, Zhan-Guo |
| description | In this paper, a theory is developed to study the anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures. The inclined misfit dislocation, which differs from the well-known vertical threading dislocation, has a remarkable tilt angle from the vertical. The predicted electron mobility shows a remarkable anisotropy. It has a maximum mobility value along the direction perpendicular to the projection of the inclined dislocation line, and a minimum mobility value along the direction parallel to the projection. The degree of the anisotropic scattering effect will be even greater with the increase of the tilt angle. |
| doi_str_mv | 10.1063/1.4862803 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22275664</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2127755360</sourcerecordid><originalsourceid>FETCH-LOGICAL-c315t-fb8d13c5d61f9c10f5986313cde3d93198173c37e5504d4370a9f409ed4332b93</originalsourceid><addsrcrecordid>eNpFkc1KAzEQx4MoWKsH3yDgxR62TTb7kRxL0VooetFz2OajTdkmNckivoDP7UgLwoQZJr-ZyT-D0D0lU0oaNqPTijclJ-wCjSjhomjrmlyiESElLbhoxTW6SWlPCKWciRH6mXuXQo7h6BROqsvZROe32FhrVMbB4rwz2HnVO280PrhkXcbapT4A7ILHYH9I_gqFdgfjEyS7Hpse6iNcbrsE9XjeP678ZNm9zuDgnYE5IeU4qDxEk27Rle36ZO7Ofow-np_eFy_F-m25WszXhWK0zoXdcE2ZqnVDrVCU2FrwhkFGG6YFo4LTlinWGhBd6Yq1pBO2IsJAzMqNYGP0cOoLs51MymWjdip4D4-VZVm2ddNU_9Qxhs_BpCz3YYigKsmSli18KWsIUJMTpUBJisbKY3SHLn5LSuTfMiSV52WwX8RGfAA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2127755360</pqid></control><display><type>article</type><title>Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Jin, Dong-Dong ; Wang, Lian-shan ; Yang, Shao-Yan ; Zhang, Liu-Wan ; Li, Hui-jie ; Zhang, Heng ; Wang, Jian-xia ; Xiang, Ruo-fei ; Wei, Hong-yuan ; Jiao, Chun-mei ; Liu, Xiang-Lin ; Zhu, Qin-Sheng ; Wang, Zhan-Guo</creator><creatorcontrib>Jin, Dong-Dong ; Wang, Lian-shan ; Yang, Shao-Yan ; Zhang, Liu-Wan ; Li, Hui-jie ; Zhang, Heng ; Wang, Jian-xia ; Xiang, Ruo-fei ; Wei, Hong-yuan ; Jiao, Chun-mei ; Liu, Xiang-Lin ; Zhu, Qin-Sheng ; Wang, Zhan-Guo</creatorcontrib><description>In this paper, a theory is developed to study the anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures. The inclined misfit dislocation, which differs from the well-known vertical threading dislocation, has a remarkable tilt angle from the vertical. The predicted electron mobility shows a remarkable anisotropy. It has a maximum mobility value along the direction perpendicular to the projection of the inclined dislocation line, and a minimum mobility value along the direction parallel to the projection. The degree of the anisotropic scattering effect will be even greater with the increase of the tilt angle.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4862803</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ALUMINIUM COMPOUNDS ; ANISOTROPY ; Applied physics ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Dislocation mobility ; DISLOCATIONS ; ELECTRON GAS ; ELECTRON MOBILITY ; Electrons ; Forecasting ; GALLIUM NITRIDES ; HETEROJUNCTIONS ; Heterostructures ; INDIUM NITRIDES ; INTERFACES ; Misfit dislocations ; SCATTERING ; Threading dislocations ; TWO-DIMENSIONAL CALCULATIONS</subject><ispartof>Journal of applied physics, 2014-01, Vol.115 (4)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c315t-fb8d13c5d61f9c10f5986313cde3d93198173c37e5504d4370a9f409ed4332b93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,778,782,883,27907,27908</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22275664$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Jin, Dong-Dong</creatorcontrib><creatorcontrib>Wang, Lian-shan</creatorcontrib><creatorcontrib>Yang, Shao-Yan</creatorcontrib><creatorcontrib>Zhang, Liu-Wan</creatorcontrib><creatorcontrib>Li, Hui-jie</creatorcontrib><creatorcontrib>Zhang, Heng</creatorcontrib><creatorcontrib>Wang, Jian-xia</creatorcontrib><creatorcontrib>Xiang, Ruo-fei</creatorcontrib><creatorcontrib>Wei, Hong-yuan</creatorcontrib><creatorcontrib>Jiao, Chun-mei</creatorcontrib><creatorcontrib>Liu, Xiang-Lin</creatorcontrib><creatorcontrib>Zhu, Qin-Sheng</creatorcontrib><creatorcontrib>Wang, Zhan-Guo</creatorcontrib><title>Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures</title><title>Journal of applied physics</title><description>In this paper, a theory is developed to study the anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures. The inclined misfit dislocation, which differs from the well-known vertical threading dislocation, has a remarkable tilt angle from the vertical. The predicted electron mobility shows a remarkable anisotropy. It has a maximum mobility value along the direction perpendicular to the projection of the inclined dislocation line, and a minimum mobility value along the direction parallel to the projection. The degree of the anisotropic scattering effect will be even greater with the increase of the tilt angle.</description><subject>ALUMINIUM COMPOUNDS</subject><subject>ANISOTROPY</subject><subject>Applied physics</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Dislocation mobility</subject><subject>DISLOCATIONS</subject><subject>ELECTRON GAS</subject><subject>ELECTRON MOBILITY</subject><subject>Electrons</subject><subject>Forecasting</subject><subject>GALLIUM NITRIDES</subject><subject>HETEROJUNCTIONS</subject><subject>Heterostructures</subject><subject>INDIUM NITRIDES</subject><subject>INTERFACES</subject><subject>Misfit dislocations</subject><subject>SCATTERING</subject><subject>Threading dislocations</subject><subject>TWO-DIMENSIONAL CALCULATIONS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkc1KAzEQx4MoWKsH3yDgxR62TTb7kRxL0VooetFz2OajTdkmNckivoDP7UgLwoQZJr-ZyT-D0D0lU0oaNqPTijclJ-wCjSjhomjrmlyiESElLbhoxTW6SWlPCKWciRH6mXuXQo7h6BROqsvZROe32FhrVMbB4rwz2HnVO280PrhkXcbapT4A7ILHYH9I_gqFdgfjEyS7Hpse6iNcbrsE9XjeP678ZNm9zuDgnYE5IeU4qDxEk27Rle36ZO7Ofow-np_eFy_F-m25WszXhWK0zoXdcE2ZqnVDrVCU2FrwhkFGG6YFo4LTlinWGhBd6Yq1pBO2IsJAzMqNYGP0cOoLs51MymWjdip4D4-VZVm2ddNU_9Qxhs_BpCz3YYigKsmSli18KWsIUJMTpUBJisbKY3SHLn5LSuTfMiSV52WwX8RGfAA</recordid><startdate>20140128</startdate><enddate>20140128</enddate><creator>Jin, Dong-Dong</creator><creator>Wang, Lian-shan</creator><creator>Yang, Shao-Yan</creator><creator>Zhang, Liu-Wan</creator><creator>Li, Hui-jie</creator><creator>Zhang, Heng</creator><creator>Wang, Jian-xia</creator><creator>Xiang, Ruo-fei</creator><creator>Wei, Hong-yuan</creator><creator>Jiao, Chun-mei</creator><creator>Liu, Xiang-Lin</creator><creator>Zhu, Qin-Sheng</creator><creator>Wang, Zhan-Guo</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140128</creationdate><title>Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures</title><author>Jin, Dong-Dong ; Wang, Lian-shan ; Yang, Shao-Yan ; Zhang, Liu-Wan ; Li, Hui-jie ; Zhang, Heng ; Wang, Jian-xia ; Xiang, Ruo-fei ; Wei, Hong-yuan ; Jiao, Chun-mei ; Liu, Xiang-Lin ; Zhu, Qin-Sheng ; Wang, Zhan-Guo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c315t-fb8d13c5d61f9c10f5986313cde3d93198173c37e5504d4370a9f409ed4332b93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ALUMINIUM COMPOUNDS</topic><topic>ANISOTROPY</topic><topic>Applied physics</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Dislocation mobility</topic><topic>DISLOCATIONS</topic><topic>ELECTRON GAS</topic><topic>ELECTRON MOBILITY</topic><topic>Electrons</topic><topic>Forecasting</topic><topic>GALLIUM NITRIDES</topic><topic>HETEROJUNCTIONS</topic><topic>Heterostructures</topic><topic>INDIUM NITRIDES</topic><topic>INTERFACES</topic><topic>Misfit dislocations</topic><topic>SCATTERING</topic><topic>Threading dislocations</topic><topic>TWO-DIMENSIONAL CALCULATIONS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jin, Dong-Dong</creatorcontrib><creatorcontrib>Wang, Lian-shan</creatorcontrib><creatorcontrib>Yang, Shao-Yan</creatorcontrib><creatorcontrib>Zhang, Liu-Wan</creatorcontrib><creatorcontrib>Li, Hui-jie</creatorcontrib><creatorcontrib>Zhang, Heng</creatorcontrib><creatorcontrib>Wang, Jian-xia</creatorcontrib><creatorcontrib>Xiang, Ruo-fei</creatorcontrib><creatorcontrib>Wei, Hong-yuan</creatorcontrib><creatorcontrib>Jiao, Chun-mei</creatorcontrib><creatorcontrib>Liu, Xiang-Lin</creatorcontrib><creatorcontrib>Zhu, Qin-Sheng</creatorcontrib><creatorcontrib>Wang, Zhan-Guo</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jin, Dong-Dong</au><au>Wang, Lian-shan</au><au>Yang, Shao-Yan</au><au>Zhang, Liu-Wan</au><au>Li, Hui-jie</au><au>Zhang, Heng</au><au>Wang, Jian-xia</au><au>Xiang, Ruo-fei</au><au>Wei, Hong-yuan</au><au>Jiao, Chun-mei</au><au>Liu, Xiang-Lin</au><au>Zhu, Qin-Sheng</au><au>Wang, Zhan-Guo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures</atitle><jtitle>Journal of applied physics</jtitle><date>2014-01-28</date><risdate>2014</risdate><volume>115</volume><issue>4</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>In this paper, a theory is developed to study the anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures. The inclined misfit dislocation, which differs from the well-known vertical threading dislocation, has a remarkable tilt angle from the vertical. The predicted electron mobility shows a remarkable anisotropy. It has a maximum mobility value along the direction perpendicular to the projection of the inclined dislocation line, and a minimum mobility value along the direction parallel to the projection. The degree of the anisotropic scattering effect will be even greater with the increase of the tilt angle.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4862803</doi></addata></record> |
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| subjects | ALUMINIUM COMPOUNDS ANISOTROPY Applied physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Dislocation mobility DISLOCATIONS ELECTRON GAS ELECTRON MOBILITY Electrons Forecasting GALLIUM NITRIDES HETEROJUNCTIONS Heterostructures INDIUM NITRIDES INTERFACES Misfit dislocations SCATTERING Threading dislocations TWO-DIMENSIONAL CALCULATIONS |
| title | Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures |
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