Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfe...

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Veröffentlicht in:	Journal of applied physics 2014-04, Vol.115 (13)
Hauptverfasser:	Um, Jae Gwang, Mativenga, Mallory, Migliorato, Piero, Jang, Jin
Format:	Artikel
Sprache:	eng
Schlagworte:	AMORPHOUS STATE Applied physics Bias CATIONS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CORRELATIONS Defects Gallium GALLIUM COMPOUNDS High temperature Indium INDIUM COMPOUNDS Indium gallium zinc oxide INTERFACES Semiconductor devices SEMICONDUCTOR MATERIALS STRESSES Thin film transistors THIN FILMS TRANSISTORS VACANCIES ZINC OXIDES
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creator	Um, Jae Gwang Mativenga, Mallory Migliorato, Piero Jang, Jin
description	We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.
doi_str_mv	10.1063/1.4870458
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The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4870458</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>AMORPHOUS STATE ; Applied physics ; Bias ; CATIONS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CORRELATIONS ; Defects ; Gallium ; GALLIUM COMPOUNDS ; High temperature ; Indium ; INDIUM COMPOUNDS ; Indium gallium zinc oxide ; INTERFACES ; Semiconductor devices ; SEMICONDUCTOR MATERIALS ; STRESSES ; Thin film transistors ; THIN FILMS ; TRANSISTORS ; VACANCIES ; ZINC OXIDES</subject><ispartof>Journal of applied physics, 2014-04, Vol.115 (13)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-4cb2c311393e015e7b312fb3dc3c291122d37167448dc79e2462ec5ca7c432733</citedby><cites>FETCH-LOGICAL-c285t-4cb2c311393e015e7b312fb3dc3c291122d37167448dc79e2462ec5ca7c432733</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22273693$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Um, Jae Gwang</creatorcontrib><creatorcontrib>Mativenga, Mallory</creatorcontrib><creatorcontrib>Migliorato, Piero</creatorcontrib><creatorcontrib>Jang, Jin</creatorcontrib><title>Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature</title><title>Journal of applied physics</title><description>We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. 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The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4870458</doi></addata></record>
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subjects	AMORPHOUS STATE Applied physics Bias CATIONS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CORRELATIONS Defects Gallium GALLIUM COMPOUNDS High temperature Indium INDIUM COMPOUNDS Indium gallium zinc oxide INTERFACES Semiconductor devices SEMICONDUCTOR MATERIALS STRESSES Thin film transistors THIN FILMS TRANSISTORS VACANCIES ZINC OXIDES
title	Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature
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