Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence
We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The cr...
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| Veröffentlicht in: | Journal of applied physics 2014-04, Vol.115 (16) |
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| container_title | Journal of applied physics |
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| creator | Semler, Matthew R. Hoey, Justin M. Guruvenket, Srinivasan Gette, Cody R. Swenson, Orven F. Hobbie, Erik K. |
| description | We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films. |
| doi_str_mv | 10.1063/1.4872464 |
| format | Article |
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Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4872464</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Amorphous silicon ; AMORPHOUS STATE ; Applied physics ; ATOMIC FORCE MICROSCOPY ; CHEMICAL VAPOR DEPOSITION ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTALLIZATION ; DIODE-PUMPED SOLID STATE LASERS ; ELECTRIC CONDUCTIVITY ; Electronic properties ; ELECTRONIC STRUCTURE ; Film thickness ; Fluence ; LASER RADIATION ; Lasers ; Microscopy ; MORPHOLOGY ; Optical properties ; Organic chemistry ; Plasma enhanced chemical vapor deposition ; RAMAN SPECTROSCOPY ; Reflectance ; SCANNING ELECTRON MICROSCOPY ; SILICON ; Silicon films ; Solid state lasers ; SPECTRAL REFLECTANCE ; Spectrum analysis ; Structural analysis ; SURFACES ; THIN FILMS ; X ray spectra ; X-RAY DIFFRACTION</subject><ispartof>Journal of applied physics, 2014-04, Vol.115 (16)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-4c7de042af1345c62cddf40f09f15f06ce2ff43b72d34d532633350159655b0c3</citedby><cites>FETCH-LOGICAL-c285t-4c7de042af1345c62cddf40f09f15f06ce2ff43b72d34d532633350159655b0c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22273535$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Semler, Matthew R.</creatorcontrib><creatorcontrib>Hoey, Justin M.</creatorcontrib><creatorcontrib>Guruvenket, Srinivasan</creatorcontrib><creatorcontrib>Gette, Cody R.</creatorcontrib><creatorcontrib>Swenson, Orven F.</creatorcontrib><creatorcontrib>Hobbie, Erik K.</creatorcontrib><title>Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence</title><title>Journal of applied physics</title><description>We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films.</description><subject>Amorphous silicon</subject><subject>AMORPHOUS STATE</subject><subject>Applied physics</subject><subject>ATOMIC FORCE MICROSCOPY</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTALLIZATION</subject><subject>DIODE-PUMPED SOLID STATE LASERS</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>Electronic properties</subject><subject>ELECTRONIC STRUCTURE</subject><subject>Film thickness</subject><subject>Fluence</subject><subject>LASER RADIATION</subject><subject>Lasers</subject><subject>Microscopy</subject><subject>MORPHOLOGY</subject><subject>Optical properties</subject><subject>Organic chemistry</subject><subject>Plasma enhanced chemical vapor deposition</subject><subject>RAMAN SPECTROSCOPY</subject><subject>Reflectance</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>SILICON</subject><subject>Silicon films</subject><subject>Solid state lasers</subject><subject>SPECTRAL REFLECTANCE</subject><subject>Spectrum analysis</subject><subject>Structural analysis</subject><subject>SURFACES</subject><subject>THIN FILMS</subject><subject>X ray spectra</subject><subject>X-RAY DIFFRACTION</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9kTtPAzEQhC0EEiFQ8A8sUVFc8PN8R4ciHpGQKIDaMnu2YnB8wfYVScFv50gitMU23-zOaBC6pGRGSc1v6Ew0iolaHKEJJU1bKSnJMZoQwmjVtKo9RWc5fxJCacPbCfp5LWmAMiQTsIkdtsFCSX30gGFpkoFik9-a4vuIe4e5lDiucDDZpgrSJhcTgt_aDmcfPPTxFi_iKFkHs_njnQ8rXJYevqLNefdhp8UuDDaCPUcnzoRsLw57it4f7t_mT9Xzy-NifvdcAWtkqQSozhLBjKNcSKgZdJ0TxJHWUelIDZY5J_iHYh0XneSs5pxLQmVbS_lBgE_R1f5un4vXGXyxsBztxjGtZowpLsf5p9ap_x5sLvqzH1IcjWlGmaqVYlSM1PWegtTnnKzT6-RXJm00JfqvBE31oQT-C5_UeXU</recordid><startdate>20140428</startdate><enddate>20140428</enddate><creator>Semler, Matthew R.</creator><creator>Hoey, Justin M.</creator><creator>Guruvenket, Srinivasan</creator><creator>Gette, Cody R.</creator><creator>Swenson, Orven F.</creator><creator>Hobbie, Erik K.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140428</creationdate><title>Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence</title><author>Semler, Matthew R. ; 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Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4872464</doi></addata></record> |
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| ispartof | Journal of applied physics, 2014-04, Vol.115 (16) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Amorphous silicon AMORPHOUS STATE Applied physics ATOMIC FORCE MICROSCOPY CHEMICAL VAPOR DEPOSITION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTALLIZATION DIODE-PUMPED SOLID STATE LASERS ELECTRIC CONDUCTIVITY Electronic properties ELECTRONIC STRUCTURE Film thickness Fluence LASER RADIATION Lasers Microscopy MORPHOLOGY Optical properties Organic chemistry Plasma enhanced chemical vapor deposition RAMAN SPECTROSCOPY Reflectance SCANNING ELECTRON MICROSCOPY SILICON Silicon films Solid state lasers SPECTRAL REFLECTANCE Spectrum analysis Structural analysis SURFACES THIN FILMS X ray spectra X-RAY DIFFRACTION |
| title | Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence |
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