Molybdenum as a contact material in zinc tin oxide thin film transistors
Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line...
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| Veröffentlicht in: | Applied physics letters 2014-05, Vol.104 (19) |
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| creator | Hu, W. Peterson, R. L. |
| description | Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors. |
| doi_str_mv | 10.1063/1.4875958 |
| format | Article |
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L.</creator><creatorcontrib>Hu, W. ; Peterson, R. L.</creatorcontrib><description>Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4875958</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Amorphous materials ; Amorphous semiconductors ; Applied physics ; BERYLLIUM 8 ; Bombardment ; Contact resistance ; Electrode materials ; Electrodes ; Electronics ; GOLD ; Indium tin oxides ; MATERIALS SCIENCE ; MOLYBDENUM ; Semiconductor devices ; SPUTTERING ; Thin film transistors ; THIN FILMS ; TIN OXIDES ; TITANIUM ; TRANSISTORS ; Transmission lines ; TUNNEL EFFECT ; ZINC</subject><ispartof>Applied physics letters, 2014-05, Vol.104 (19)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-d06daaf9013a82b5a6700d9d00066e0b649abf40bbe55df6324c535d3ca23f403</citedby><cites>FETCH-LOGICAL-c351t-d06daaf9013a82b5a6700d9d00066e0b649abf40bbe55df6324c535d3ca23f403</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22273417$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Hu, W.</creatorcontrib><creatorcontrib>Peterson, R. L.</creatorcontrib><title>Molybdenum as a contact material in zinc tin oxide thin film transistors</title><title>Applied physics letters</title><description>Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.</description><subject>Amorphous materials</subject><subject>Amorphous semiconductors</subject><subject>Applied physics</subject><subject>BERYLLIUM 8</subject><subject>Bombardment</subject><subject>Contact resistance</subject><subject>Electrode materials</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>GOLD</subject><subject>Indium tin oxides</subject><subject>MATERIALS SCIENCE</subject><subject>MOLYBDENUM</subject><subject>Semiconductor devices</subject><subject>SPUTTERING</subject><subject>Thin film transistors</subject><subject>THIN FILMS</subject><subject>TIN OXIDES</subject><subject>TITANIUM</subject><subject>TRANSISTORS</subject><subject>Transmission lines</subject><subject>TUNNEL EFFECT</subject><subject>ZINC</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkMFKAzEQhoMoWKsH3yDgycPWJLNJdo9S1AoVL3oO2SRLU3Y3NUnB-vRGWvA0_wwfw8eP0C0lC0oEPNBF3Uje8uYMzSiRsgJKm3M0I4RAJVpOL9FVStuycgYwQ6u3MBw666b9iHXCGpswZW0yHnV20esB-wn_-MngXEL49tbhvCmx98OIc9RT8imHmK7RRa-H5G5Oc44-n58-lqtq_f7yunxcVwY4zZUlwmrdt4SCbljHtZCE2NYWISEc6UTd6q6vSdc5zm0vgNWGA7dgNINyhzm6O_4NKXuVjM_ObIr05ExWjDEJNZX_1C6Gr71LWW3DPk5FTDHKpBCiYaJQ90fKxJBSdL3aRT_qeFCUqL86FVWnOuEXvE9llQ</recordid><startdate>20140512</startdate><enddate>20140512</enddate><creator>Hu, W.</creator><creator>Peterson, R. L.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140512</creationdate><title>Molybdenum as a contact material in zinc tin oxide thin film transistors</title><author>Hu, W. ; Peterson, R. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-d06daaf9013a82b5a6700d9d00066e0b649abf40bbe55df6324c535d3ca23f403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Amorphous materials</topic><topic>Amorphous semiconductors</topic><topic>Applied physics</topic><topic>BERYLLIUM 8</topic><topic>Bombardment</topic><topic>Contact resistance</topic><topic>Electrode materials</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>GOLD</topic><topic>Indium tin oxides</topic><topic>MATERIALS SCIENCE</topic><topic>MOLYBDENUM</topic><topic>Semiconductor devices</topic><topic>SPUTTERING</topic><topic>Thin film transistors</topic><topic>THIN FILMS</topic><topic>TIN OXIDES</topic><topic>TITANIUM</topic><topic>TRANSISTORS</topic><topic>Transmission lines</topic><topic>TUNNEL EFFECT</topic><topic>ZINC</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hu, W.</creatorcontrib><creatorcontrib>Peterson, R. L.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hu, W.</au><au>Peterson, R. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Molybdenum as a contact material in zinc tin oxide thin film transistors</atitle><jtitle>Applied physics letters</jtitle><date>2014-05-12</date><risdate>2014</risdate><volume>104</volume><issue>19</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4875958</doi></addata></record> |
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| ispartof | Applied physics letters, 2014-05, Vol.104 (19) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Amorphous materials Amorphous semiconductors Applied physics BERYLLIUM 8 Bombardment Contact resistance Electrode materials Electrodes Electronics GOLD Indium tin oxides MATERIALS SCIENCE MOLYBDENUM Semiconductor devices SPUTTERING Thin film transistors THIN FILMS TIN OXIDES TITANIUM TRANSISTORS Transmission lines TUNNEL EFFECT ZINC |
| title | Molybdenum as a contact material in zinc tin oxide thin film transistors |
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