Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma

We propose a low-temperature electron cyclotron resonance microwave hydrogen-nitrogen mixed plasma treatment method for passivating 4H-SiC surface and investigate the effects of treatment on the structural, chemical, and electronic properties of the surface. The results indicate that the method is h...

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Veröffentlicht in:	Applied physics letters 2014-05, Vol.104 (20)
Hauptverfasser:	Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Cyclotron resonance Diodes ELECTRON CYCLOTRON-RESONANCE HYDROGEN 4 MATERIALS SCIENCE MICROWAVE RADIATION NITROGEN Organic chemistry PASSIVATION SILICON CARBIDES SURFACES
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