Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions

Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions

The effects of thermal annealing process on the interface in p+-Si/n-SiC heterojunctions fabricated by using surface-activated bonding are investigated. It is found by measuring their current-voltage (I-V) characteristics that the reverse-bias current and the ideality factor decreased to 2.98 × 10−6...

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Veröffentlicht in:Applied physics letters 2014-04, Vol.104 (16)
Hauptverfasser: Liang, J., Nishida, S., Arai, M., Shigekawa, N.
Format: Artikel
Sprache:eng
Schlagworte:
ANNEALING
Applied physics
BONDING
Current voltage characteristics
Defect annealing
ELECTRIC CONDUCTIVITY
Electrical junctions
Electrical properties
HETEROJUNCTIONS
MATERIALS SCIENCE
PHOSPHORUS IONS
Radioactivity
Silicon carbide
SILICON CARBIDES
Thickness
TRANSMISSION ELECTRON MICROSCOPY
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Zusammenfassung:The effects of thermal annealing process on the interface in p+-Si/n-SiC heterojunctions fabricated by using surface-activated bonding are investigated. It is found by measuring their current-voltage (I-V) characteristics that the reverse-bias current and the ideality factor decreased to 2.98 × 10−6 mA/cm2 and 1.03, respectively, by annealing the junctions at 1000 °C. Observation by using transmission electron microscopy indicates that an amorphous layer with a thickness of ∼6 nm is formed at the unannealed interface, which vanishes after annealing at 1000 °C. No structural defects at the interface are observed even after annealing at such a high temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4873113