Magnetoelectric transport and quantum interference effect in ultrathin manganite films
The magnetoelectric transport behavior with respect to the thicknesses of ultrathin La0.9Sr0.1MnO3 films is investigated in detail. The metal-insulator phase transition, which has never been observed in bulk La0.9Sr0.1MnO3, is found in ultrathin films with thicknesses larger than 6 unit cells. Low-t...
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| Veröffentlicht in: | Applied physics letters 2014-04, Vol.104 (16) |
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| container_title | Applied physics letters |
| container_volume | 104 |
| creator | Wang, Cong Jin, Kui-juan Gu, Lin Lu, Hui-bin Li, Shan-ming Zhou, Wen-jia Zhao, Rui-qiang Guo, Hai-zhong He, Meng Yang, Guo-zhen |
| description | The magnetoelectric transport behavior with respect to the thicknesses of ultrathin La0.9Sr0.1MnO3 films is investigated in detail. The metal-insulator phase transition, which has never been observed in bulk La0.9Sr0.1MnO3, is found in ultrathin films with thicknesses larger than 6 unit cells. Low-temperature resistivity minima appeared in films with thicknesses less than 10 unit cells. This is attributed to the presence of quantum interference effects. These data suggest that the influence of the weak localization becomes much pronounced as the film thickness decreases from 16 to 8 unit cells. |
| doi_str_mv | 10.1063/1.4873337 |
| format | Article |
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The metal-insulator phase transition, which has never been observed in bulk La0.9Sr0.1MnO3, is found in ultrathin films with thicknesses larger than 6 unit cells. Low-temperature resistivity minima appeared in films with thicknesses less than 10 unit cells. This is attributed to the presence of quantum interference effects. These data suggest that the influence of the weak localization becomes much pronounced as the film thickness decreases from 16 to 8 unit cells.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4873337</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; ELECTRICAL INSULATORS ; ELECTRICAL PROPERTIES ; Film thickness ; Insulators ; Interference ; MAGNETIC PROPERTIES ; METALS ; PHASE TRANSFORMATIONS ; Phase transitions ; Quantum interference effects ; TEMPERATURE RANGE 0065-0273 K ; THICKNESS ; THIN FILMS ; Transport</subject><ispartof>Applied physics letters, 2014-04, Vol.104 (16)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-4cd50b1b2e56e0e99b24b3c8f6eaeadbd718cf4695513d1bce7da6d50be5e7f93</citedby><cites>FETCH-LOGICAL-c285t-4cd50b1b2e56e0e99b24b3c8f6eaeadbd718cf4695513d1bce7da6d50be5e7f93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22262557$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Wang, Cong</creatorcontrib><creatorcontrib>Jin, Kui-juan</creatorcontrib><creatorcontrib>Gu, Lin</creatorcontrib><creatorcontrib>Lu, Hui-bin</creatorcontrib><creatorcontrib>Li, Shan-ming</creatorcontrib><creatorcontrib>Zhou, Wen-jia</creatorcontrib><creatorcontrib>Zhao, Rui-qiang</creatorcontrib><creatorcontrib>Guo, Hai-zhong</creatorcontrib><creatorcontrib>He, Meng</creatorcontrib><creatorcontrib>Yang, Guo-zhen</creatorcontrib><title>Magnetoelectric transport and quantum interference effect in ultrathin manganite films</title><title>Applied physics letters</title><description>The magnetoelectric transport behavior with respect to the thicknesses of ultrathin La0.9Sr0.1MnO3 films is investigated in detail. The metal-insulator phase transition, which has never been observed in bulk La0.9Sr0.1MnO3, is found in ultrathin films with thicknesses larger than 6 unit cells. Low-temperature resistivity minima appeared in films with thicknesses less than 10 unit cells. This is attributed to the presence of quantum interference effects. These data suggest that the influence of the weak localization becomes much pronounced as the film thickness decreases from 16 to 8 unit cells.</description><subject>Applied physics</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>ELECTRICAL INSULATORS</subject><subject>ELECTRICAL PROPERTIES</subject><subject>Film thickness</subject><subject>Insulators</subject><subject>Interference</subject><subject>MAGNETIC PROPERTIES</subject><subject>METALS</subject><subject>PHASE TRANSFORMATIONS</subject><subject>Phase transitions</subject><subject>Quantum interference effects</subject><subject>TEMPERATURE RANGE 0065-0273 K</subject><subject>THICKNESS</subject><subject>THIN FILMS</subject><subject>Transport</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkLtOwzAUhi0EEqUw8AaWmBhSfIntZEQVFKQiFmC1HOe4TZU4re0MvD2uWonpXPSdo08_QveULCiR_IkuykpxztUFmlGiVMEprS7RjBDCC1kLeo1uYtzlUTDOZ-jnw2w8pBF6sCl0FqdgfNyPIWHjW3yYjE_TgDufIDgI4C1gcC7DeYenPuNpm7vB-I3xXQLsun6It-jKmT7C3bnO0ffry9fyrVh_rt6Xz-vCskqkorStIA1tGAgJBOq6YWXDbeUkGDBt0ypaWVdmb0F5SxsLqjXyeAMClKv5HD2c_o4xdTraLGC3dvQ-C2rGmGRCqH9qH8bDBDHp3TgFn8U0o0xJxVR5_PV4omwYYwzg9D50gwm_mhJ9DFdTfQ6X_wF0FG0p</recordid><startdate>20140421</startdate><enddate>20140421</enddate><creator>Wang, Cong</creator><creator>Jin, Kui-juan</creator><creator>Gu, Lin</creator><creator>Lu, Hui-bin</creator><creator>Li, Shan-ming</creator><creator>Zhou, Wen-jia</creator><creator>Zhao, Rui-qiang</creator><creator>Guo, Hai-zhong</creator><creator>He, Meng</creator><creator>Yang, Guo-zhen</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140421</creationdate><title>Magnetoelectric transport and quantum interference effect in ultrathin manganite films</title><author>Wang, Cong ; Jin, Kui-juan ; Gu, Lin ; Lu, Hui-bin ; Li, Shan-ming ; Zhou, Wen-jia ; Zhao, Rui-qiang ; Guo, Hai-zhong ; He, Meng ; Yang, Guo-zhen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-4cd50b1b2e56e0e99b24b3c8f6eaeadbd718cf4695513d1bce7da6d50be5e7f93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>ELECTRICAL INSULATORS</topic><topic>ELECTRICAL PROPERTIES</topic><topic>Film thickness</topic><topic>Insulators</topic><topic>Interference</topic><topic>MAGNETIC PROPERTIES</topic><topic>METALS</topic><topic>PHASE TRANSFORMATIONS</topic><topic>Phase transitions</topic><topic>Quantum interference effects</topic><topic>TEMPERATURE RANGE 0065-0273 K</topic><topic>THICKNESS</topic><topic>THIN FILMS</topic><topic>Transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Cong</creatorcontrib><creatorcontrib>Jin, Kui-juan</creatorcontrib><creatorcontrib>Gu, Lin</creatorcontrib><creatorcontrib>Lu, Hui-bin</creatorcontrib><creatorcontrib>Li, Shan-ming</creatorcontrib><creatorcontrib>Zhou, Wen-jia</creatorcontrib><creatorcontrib>Zhao, Rui-qiang</creatorcontrib><creatorcontrib>Guo, Hai-zhong</creatorcontrib><creatorcontrib>He, Meng</creatorcontrib><creatorcontrib>Yang, Guo-zhen</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Cong</au><au>Jin, Kui-juan</au><au>Gu, Lin</au><au>Lu, Hui-bin</au><au>Li, Shan-ming</au><au>Zhou, Wen-jia</au><au>Zhao, Rui-qiang</au><au>Guo, Hai-zhong</au><au>He, Meng</au><au>Yang, Guo-zhen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetoelectric transport and quantum interference effect in ultrathin manganite films</atitle><jtitle>Applied physics letters</jtitle><date>2014-04-21</date><risdate>2014</risdate><volume>104</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The magnetoelectric transport behavior with respect to the thicknesses of ultrathin La0.9Sr0.1MnO3 films is investigated in detail. The metal-insulator phase transition, which has never been observed in bulk La0.9Sr0.1MnO3, is found in ultrathin films with thicknesses larger than 6 unit cells. Low-temperature resistivity minima appeared in films with thicknesses less than 10 unit cells. This is attributed to the presence of quantum interference effects. These data suggest that the influence of the weak localization becomes much pronounced as the film thickness decreases from 16 to 8 unit cells.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4873337</doi></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ELECTRICAL INSULATORS ELECTRICAL PROPERTIES Film thickness Insulators Interference MAGNETIC PROPERTIES METALS PHASE TRANSFORMATIONS Phase transitions Quantum interference effects TEMPERATURE RANGE 0065-0273 K THICKNESS THIN FILMS Transport |
| title | Magnetoelectric transport and quantum interference effect in ultrathin manganite films |
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