High excitation power photoluminescence studies of ultra-low density GaAs quantum dots
We fabricate GaAs epitaxial quantum dots (QDs) by filling of self-organized nanoholes in AlGaAs. The QDs are fabricated under optimized process conditions and have ultra-low density in the 106 cm−2 regime. At low excitation power the optical emission of single QDs exhibit sharp excitonic lines, whic...
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| creator | Sonnenberg, D Graf, A Paulava, V Heyn Ch Hansen, W |
| description | We fabricate GaAs epitaxial quantum dots (QDs) by filling of self-organized nanoholes in AlGaAs. The QDs are fabricated under optimized process conditions and have ultra-low density in the 106 cm−2 regime. At low excitation power the optical emission of single QDs exhibit sharp excitonic lines, which are attributed to the recombination of excitonic and biexcitonic states. High excitation power measurements reveal surprisingly broad emission lines from at least six QD shell states. |
| doi_str_mv | 10.1063/1.4848470 |
| format | Conference Proceeding |
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The QDs are fabricated under optimized process conditions and have ultra-low density in the 106 cm−2 regime. At low excitation power the optical emission of single QDs exhibit sharp excitonic lines, which are attributed to the recombination of excitonic and biexcitonic states. High excitation power measurements reveal surprisingly broad emission lines from at least six QD shell states.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.4848470</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ALUMINIUM ARSENIDES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DENSITY ; Electrons ; Emission ; EPITAXY ; EXCITATION ; Gallium arsenide ; GALLIUM ARSENIDES ; NANOSCIENCE AND NANOTECHNOLOGY ; PHOTOLUMINESCENCE ; Power measurement ; QUANTUM DOTS</subject><ispartof>AIP Conference Proceedings, 2013, Vol.1566 (1), p.432</ispartof><rights>2013 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,309,310,314,780,784,789,790,885,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22261886$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sonnenberg, D</creatorcontrib><creatorcontrib>Graf, A</creatorcontrib><creatorcontrib>Paulava, V</creatorcontrib><creatorcontrib>Heyn Ch</creatorcontrib><creatorcontrib>Hansen, W</creatorcontrib><title>High excitation power photoluminescence studies of ultra-low density GaAs quantum dots</title><title>AIP Conference Proceedings</title><description>We fabricate GaAs epitaxial quantum dots (QDs) by filling of self-organized nanoholes in AlGaAs. The QDs are fabricated under optimized process conditions and have ultra-low density in the 106 cm−2 regime. At low excitation power the optical emission of single QDs exhibit sharp excitonic lines, which are attributed to the recombination of excitonic and biexcitonic states. High excitation power measurements reveal surprisingly broad emission lines from at least six QD shell states.</description><subject>ALUMINIUM ARSENIDES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DENSITY</subject><subject>Electrons</subject><subject>Emission</subject><subject>EPITAXY</subject><subject>EXCITATION</subject><subject>Gallium arsenide</subject><subject>GALLIUM ARSENIDES</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>PHOTOLUMINESCENCE</subject><subject>Power measurement</subject><subject>QUANTUM DOTS</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNpFj0FLAzEUhIMoWKsH_0HA89a8bDbZPZaiVih4UfG2ZLMvNmWbtJuE6r93QUHmMIcZhm8IuQW2ACbLe1iIepJiZ2QGVQWFkiDPyYyxRhRclB-X5CrGHWO8Uaqekfe1-9xS_DIu6eSCp4dwwpEetiGFIe-dx2jQG6Qx5d5hpMHSPKRRF0M40R59dOmbPullpMesfcp72ocUr8mF1UPEmz-fk7fHh9fVuti8PD2vlpsicCFT0ZQIHEGUYBWXaEFZyzqltO6sqWrZTXE_kda8x6ZBCaoBpnXV25rrTthyTu5-d0NMro3TCzRbE7xHk1rOuYS6lv-twxiOGWNqdyGPfgJrOXClFBOClT9NAl8L</recordid><startdate>20131204</startdate><enddate>20131204</enddate><creator>Sonnenberg, D</creator><creator>Graf, A</creator><creator>Paulava, V</creator><creator>Heyn Ch</creator><creator>Hansen, W</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20131204</creationdate><title>High excitation power photoluminescence studies of ultra-low density GaAs quantum dots</title><author>Sonnenberg, D ; Graf, A ; Paulava, V ; Heyn Ch ; Hansen, W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-o246t-93e12e1431f726ef17ff0b77aabfc586be12d29782de99e617910aa5df82ab4f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>ALUMINIUM ARSENIDES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DENSITY</topic><topic>Electrons</topic><topic>Emission</topic><topic>EPITAXY</topic><topic>EXCITATION</topic><topic>Gallium arsenide</topic><topic>GALLIUM ARSENIDES</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>PHOTOLUMINESCENCE</topic><topic>Power measurement</topic><topic>QUANTUM DOTS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sonnenberg, D</creatorcontrib><creatorcontrib>Graf, A</creatorcontrib><creatorcontrib>Paulava, V</creatorcontrib><creatorcontrib>Heyn Ch</creatorcontrib><creatorcontrib>Hansen, W</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sonnenberg, D</au><au>Graf, A</au><au>Paulava, V</au><au>Heyn Ch</au><au>Hansen, W</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High excitation power photoluminescence studies of ultra-low density GaAs quantum dots</atitle><btitle>AIP Conference Proceedings</btitle><date>2013-12-04</date><risdate>2013</risdate><volume>1566</volume><issue>1</issue><epage>432</epage><issn>0094-243X</issn><eissn>1551-7616</eissn><abstract>We fabricate GaAs epitaxial quantum dots (QDs) by filling of self-organized nanoholes in AlGaAs. The QDs are fabricated under optimized process conditions and have ultra-low density in the 106 cm−2 regime. At low excitation power the optical emission of single QDs exhibit sharp excitonic lines, which are attributed to the recombination of excitonic and biexcitonic states. High excitation power measurements reveal surprisingly broad emission lines from at least six QD shell states.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4848470</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP Conference Proceedings, 2013, Vol.1566 (1), p.432 |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22261886 |
| source | AIP Journals Complete |
| subjects | ALUMINIUM ARSENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DENSITY Electrons Emission EPITAXY EXCITATION Gallium arsenide GALLIUM ARSENIDES NANOSCIENCE AND NANOTECHNOLOGY PHOTOLUMINESCENCE Power measurement QUANTUM DOTS |
| title | High excitation power photoluminescence studies of ultra-low density GaAs quantum dots |
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