Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO{sub 2}/SiO{sub 2} dielectric mirrors

Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO{sub 2}/SiO{sub 2} dielectric mirrors

We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al{sub x}Ga{sub 1−x}N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/...

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Veröffentlicht in:Applied physics letters 2013-11, Vol.103 (21)
Hauptverfasser: Kao, Tsung-Ting, Liu, Yuh-Shiuan, Mahbub Satter, Md, Li, Xiao-Hang, Lochner, Zachary, Douglas Yoder, P., Detchprohm, Theeradetch, Dupuis, Russell D., Shen, Shyh-Chiang, Ryou, Jae-Hyun, Fischer, Alec M., Wei, Yong, Xie, Hongen, Ponce, Fernando A.
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM NITRIDES
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
DIELECTRIC MATERIALS
HAFNIUM OXIDES
LANTHANUM SELENIDES
LASERS
MATERIALS SCIENCE
POWER DENSITY
QUANTUM WELLS
SILICA
SILICON OXIDES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
ULTRAVIOLET RADIATION
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Zusammenfassung:We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al{sub x}Ga{sub 1−x}N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm{sup 2}. After employing high-reflectivity SiO{sub 2}/HfO{sub 2} dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm{sup 2}. The internal loss and threshold modal gain can be calculated as 2 cm{sup −1} and 10.9 cm{sup −1}, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4829477