Heteroepitaxy of group IV-VI nitrides by atomic layer deposition
Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of el...
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| Veröffentlicht in: | Applied physics letters 2013-11, Vol.103 (21) |
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| container_issue | 21 |
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| container_title | Applied physics letters |
| container_volume | 103 |
| creator | Klug, Jeffrey A. Becker, Nicholas G. Groll, Nickolas R. Cao, Chaoyue Weimer, Matthew S. Pellin, Michael J. Zasadzinski, John F. Proslier, Thomas |
| description | Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates. |
| doi_str_mv | 10.1063/1.4831977 |
| format | Article |
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High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4831977</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2013-11, Vol.103 (21) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22254017 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ALUMINIUM OXIDES Aluminum oxide Applied physics Atomic layer epitaxy DEPOSITION Electrical properties EPITAXY Fused quartz MATERIALS SCIENCE NITRIDES ORIENTATION POLYCRYSTALS QUARTZ SAPPHIRE SUBSTRATES |
| title | Heteroepitaxy of group IV-VI nitrides by atomic layer deposition |
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