Synthesis of SiO{sub 2}/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition
β-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown β-SiC films. X-ray diffraction an...
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| Veröffentlicht in: | Applied physics letters 2013-11, Vol.103 (21) |
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| container_title | Applied physics letters |
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| creator | Zhang, Zhikun Bi, Kaifeng Liu, Yanhong Qin, Fuwen Liu, Hongzhu Bian, Jiming Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 Zhang, Dong Miao, Lihua Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034 |
| description | β-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown β-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/β-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level. |
| doi_str_mv | 10.1063/1.4833255 |
| format | Article |
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SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown β-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/β-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4833255</identifier><language>eng</language><publisher>United States</publisher><subject>ANNEALING ; CHEMICAL VAPOR DEPOSITION ; FILAMENTS ; GRAPHITE ; MATERIALS SCIENCE ; SILICA ; SILICON CARBIDES ; SILICON OXIDES ; THIN FILMS ; X-RAY DIFFRACTION</subject><ispartof>Applied physics letters, 2013-11, Vol.103 (21)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22253996$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Zhikun</creatorcontrib><creatorcontrib>Bi, Kaifeng</creatorcontrib><creatorcontrib>Liu, Yanhong</creatorcontrib><creatorcontrib>Qin, Fuwen</creatorcontrib><creatorcontrib>Liu, Hongzhu</creatorcontrib><creatorcontrib>Bian, Jiming</creatorcontrib><creatorcontrib>Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050</creatorcontrib><creatorcontrib>Zhang, Dong</creatorcontrib><creatorcontrib>Miao, Lihua</creatorcontrib><creatorcontrib>Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034</creatorcontrib><title>Synthesis of SiO{sub 2}/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition</title><title>Applied physics letters</title><description>β-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown β-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/β-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.</description><subject>ANNEALING</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>FILAMENTS</subject><subject>GRAPHITE</subject><subject>MATERIALS SCIENCE</subject><subject>SILICA</subject><subject>SILICON CARBIDES</subject><subject>SILICON OXIDES</subject><subject>THIN FILMS</subject><subject>X-RAY DIFFRACTION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqNjEtOwzAURS0EEuEzYAdPYpzGH5w24wrEjEGYV47rYKPEL_JzQRFiUyyENRFQF8Do6lydexm7EXwleK0qsbrbKCW1PmGF4Ot1qYTYnLKCc67KutHinF0QvS6opVIFS-0cs3cUCLCHNjx90KED-Vl9f5Vt2FYvyUw-ZAd-7lLYg8VxQvotuhkGfIfsxsklkw9pcTBDHwYzupjBejcGawZ4MxMm2Lu_XcB4xc56M5C7PuYlu324f94-lkg57Mgu59ZbjNHZvJNSatU0tfqf9QOzwFHT</recordid><startdate>20131118</startdate><enddate>20131118</enddate><creator>Zhang, Zhikun</creator><creator>Bi, Kaifeng</creator><creator>Liu, Yanhong</creator><creator>Qin, Fuwen</creator><creator>Liu, Hongzhu</creator><creator>Bian, Jiming</creator><creator>Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050</creator><creator>Zhang, Dong</creator><creator>Miao, Lihua</creator><creator>Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034</creator><scope>OTOTI</scope></search><sort><creationdate>20131118</creationdate><title>Synthesis of SiO{sub 2}/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition</title><author>Zhang, Zhikun ; Bi, Kaifeng ; Liu, Yanhong ; Qin, Fuwen ; Liu, Hongzhu ; Bian, Jiming ; Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 ; Zhang, Dong ; Miao, Lihua ; Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_222539963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>ANNEALING</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>FILAMENTS</topic><topic>GRAPHITE</topic><topic>MATERIALS SCIENCE</topic><topic>SILICA</topic><topic>SILICON CARBIDES</topic><topic>SILICON OXIDES</topic><topic>THIN FILMS</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Zhikun</creatorcontrib><creatorcontrib>Bi, Kaifeng</creatorcontrib><creatorcontrib>Liu, Yanhong</creatorcontrib><creatorcontrib>Qin, Fuwen</creatorcontrib><creatorcontrib>Liu, Hongzhu</creatorcontrib><creatorcontrib>Bian, Jiming</creatorcontrib><creatorcontrib>Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050</creatorcontrib><creatorcontrib>Zhang, Dong</creatorcontrib><creatorcontrib>Miao, Lihua</creatorcontrib><creatorcontrib>Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Zhikun</au><au>Bi, Kaifeng</au><au>Liu, Yanhong</au><au>Qin, Fuwen</au><au>Liu, Hongzhu</au><au>Bian, Jiming</au><au>Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050</au><au>Zhang, Dong</au><au>Miao, Lihua</au><au>Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis of SiO{sub 2}/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition</atitle><jtitle>Applied physics letters</jtitle><date>2013-11-18</date><risdate>2013</risdate><volume>103</volume><issue>21</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>β-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown β-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/β-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.</abstract><cop>United States</cop><doi>10.1063/1.4833255</doi></addata></record> |
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| ispartof | Applied physics letters, 2013-11, Vol.103 (21) |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ANNEALING CHEMICAL VAPOR DEPOSITION FILAMENTS GRAPHITE MATERIALS SCIENCE SILICA SILICON CARBIDES SILICON OXIDES THIN FILMS X-RAY DIFFRACTION |
| title | Synthesis of SiO{sub 2}/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition |
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