Extreme ultraviolet induced defects on few-layer graphene
We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, du...
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| Veröffentlicht in: | Journal of applied physics 2013-07, Vol.114 (4) |
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| container_title | Journal of applied physics |
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| creator | Gao, A. Rizo, P. J. Zoethout, E. Scaccabarozzi, L. Lee, C. J. Banine, V. Bijkerk, F. |
| description | We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects. |
| doi_str_mv | 10.1063/1.4817082 |
| format | Article |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2013-07, Vol.114 (4) |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Background radiation Bonding Carbon CHEMICAL BONDS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Defects DENSITY DOSES EXTREME ULTRAVIOLET RADIATION GRAPHENE HYDROGEN Hydrogen plasma LAYERS MATERIALS SCIENCE OXIDATION OXIDES PHOTONS RAMAN SPECTRA RAMAN SPECTROSCOPY Ultraviolet X-RAY PHOTOELECTRON SPECTROSCOPY |
| title | Extreme ultraviolet induced defects on few-layer graphene |
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