Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy
In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts wit...
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| Veröffentlicht in: | Applied physics letters 2013-08, Vol.103 (7) |
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| container_title | Applied physics letters |
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| creator | Zhang, Zhi Lu, Zhen-Yu Chen, Ping-Ping Xu, Hong-Yi Guo, Ya-Nan Liao, Zhi-Ming Shi, Sui-Xing Lu, Wei Zou, Jin |
| description | In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants. |
| doi_str_mv | 10.1063/1.4818682 |
| format | Article |
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Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4818682</identifier><language>eng</language><publisher>United States</publisher><subject>CATALYSIS ; CATALYSTS ; CONCENTRATION RATIO ; FABRICATION ; GOLD ; INDIUM ARSENIDES ; LAYERS ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; NANOSCIENCE AND NANOTECHNOLOGY ; PHASE DIAGRAMS ; QUANTUM WIRES ; SCANNING ELECTRON MICROSCOPY ; SEMICONDUCTOR MATERIALS ; TRANSMISSION ELECTRON MICROSCOPY</subject><ispartof>Applied physics letters, 2013-08, Vol.103 (7)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-d1e064b2ea13e5b2b8eaa868573c14dbb8fa987755924828bf72764b85ce3a43</citedby><cites>FETCH-LOGICAL-c292t-d1e064b2ea13e5b2b8eaa868573c14dbb8fa987755924828bf72764b85ce3a43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22218228$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Zhi</creatorcontrib><creatorcontrib>Lu, Zhen-Yu</creatorcontrib><creatorcontrib>Chen, Ping-Ping</creatorcontrib><creatorcontrib>Xu, Hong-Yi</creatorcontrib><creatorcontrib>Guo, Ya-Nan</creatorcontrib><creatorcontrib>Liao, Zhi-Ming</creatorcontrib><creatorcontrib>Shi, Sui-Xing</creatorcontrib><creatorcontrib>Lu, Wei</creatorcontrib><creatorcontrib>Zou, Jin</creatorcontrib><title>Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy</title><title>Applied physics letters</title><description>In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.</description><subject>CATALYSIS</subject><subject>CATALYSTS</subject><subject>CONCENTRATION RATIO</subject><subject>FABRICATION</subject><subject>GOLD</subject><subject>INDIUM ARSENIDES</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>PHASE DIAGRAMS</subject><subject>QUANTUM WIRES</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotUEtLAzEYDKJgrR78BwFPHrbmsdlkj6X4KBRE6MVT-JJ-i5F0tyQpuv56V-xpGJgZZoaQW84WnDXygS9qw01jxBmZcaZ1JTk352TGGJNV0yp-Sa5y_pyoElLOyPvbEWIoIx06iodQ4DtApOt-mWkP_fAVEmbqh76kIUbcUTdSDwXimAvN4Qdp6Ol-iOiPERJ1CPtTzHhNLjqIGW9OOCfbp8ft6qXavD6vV8tN5UUrSrXjyJraCQQuUTnhDAJMA5SWntc750wHrdFaqVbURhjXaaEng1EeJdRyTu7-Y4dcgs0-FPQfU-EefbFCCG6EMJPq_l_l05Bzws4eUthDGi1n9u84y-3pOPkLrJhgJw</recordid><startdate>20130812</startdate><enddate>20130812</enddate><creator>Zhang, Zhi</creator><creator>Lu, Zhen-Yu</creator><creator>Chen, Ping-Ping</creator><creator>Xu, Hong-Yi</creator><creator>Guo, Ya-Nan</creator><creator>Liao, Zhi-Ming</creator><creator>Shi, Sui-Xing</creator><creator>Lu, Wei</creator><creator>Zou, Jin</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20130812</creationdate><title>Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy</title><author>Zhang, Zhi ; Lu, Zhen-Yu ; Chen, Ping-Ping ; Xu, Hong-Yi ; Guo, Ya-Nan ; Liao, Zhi-Ming ; Shi, Sui-Xing ; Lu, Wei ; Zou, Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-d1e064b2ea13e5b2b8eaa868573c14dbb8fa987755924828bf72764b85ce3a43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>CATALYSIS</topic><topic>CATALYSTS</topic><topic>CONCENTRATION RATIO</topic><topic>FABRICATION</topic><topic>GOLD</topic><topic>INDIUM ARSENIDES</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>PHASE DIAGRAMS</topic><topic>QUANTUM WIRES</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Zhi</creatorcontrib><creatorcontrib>Lu, Zhen-Yu</creatorcontrib><creatorcontrib>Chen, Ping-Ping</creatorcontrib><creatorcontrib>Xu, Hong-Yi</creatorcontrib><creatorcontrib>Guo, Ya-Nan</creatorcontrib><creatorcontrib>Liao, Zhi-Ming</creatorcontrib><creatorcontrib>Shi, Sui-Xing</creatorcontrib><creatorcontrib>Lu, Wei</creatorcontrib><creatorcontrib>Zou, Jin</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Zhi</au><au>Lu, Zhen-Yu</au><au>Chen, Ping-Ping</au><au>Xu, Hong-Yi</au><au>Guo, Ya-Nan</au><au>Liao, Zhi-Ming</au><au>Shi, Sui-Xing</au><au>Lu, Wei</au><au>Zou, Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>2013-08-12</date><risdate>2013</risdate><volume>103</volume><issue>7</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.</abstract><cop>United States</cop><doi>10.1063/1.4818682</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2013-08, Vol.103 (7) |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | CATALYSIS CATALYSTS CONCENTRATION RATIO FABRICATION GOLD INDIUM ARSENIDES LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY PHASE DIAGRAMS QUANTUM WIRES SCANNING ELECTRON MICROSCOPY SEMICONDUCTOR MATERIALS TRANSMISSION ELECTRON MICROSCOPY |
| title | Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy |
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