64  μ W pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions

64  μ W pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions

We present results on optimized growth temperatures and layer structure design of high mobility photoconductive Terahertz (THz) emitters based on molecular beam epitaxy grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS). The photoconductive antennas made of these MLHS are evaluat...

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Veröffentlicht in:Applied physics letters 2013-08, Vol.103 (6)
Hauptverfasser: Dietz, Roman J. B., Globisch, Björn, Gerhard, Marina, Velauthapillai, Ajanthkrishna, Stanze, Dennis, Roehle, Helmut, Koch, Martin, Göbel, Thorsten, Schell, Martin
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM COMPOUNDS
ANTENNAS
EFFICIENCY
EMISSION
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
LAYERS
MATERIALS SCIENCE
MOBILITY
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
PULSES
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROMETERS
TRAPPING
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Zusammenfassung:We present results on optimized growth temperatures and layer structure design of high mobility photoconductive Terahertz (THz) emitters based on molecular beam epitaxy grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS). The photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer and with a Golay cell. We measured a THz bandwidth in excess of 4 THz and average THz powers of up to 64 μW corresponding to an optical power-to-THz power conversion efficiency of up to 2 × 10−3.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4817797