Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent o...

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Veröffentlicht in:Applied physics letters 2013-08, Vol.103 (8)
Hauptverfasser: Zech, E. S., Chang, A. S., Martin, A. J., Canniff, J. C., Millunchick, J. M., Lin, Y. H., Goldman, R. S., Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136
Format: Artikel
Sprache:eng
Schlagworte:
DISLOCATIONS
FABRICATION
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INTERFACES
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
STRAINS
SURFACE TREATMENTS
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
VALENCE
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Zusammenfassung:We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4818270