Low temperature grown GaNAsSb: A promising material for photoconductive switch application
We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the...
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| Veröffentlicht in: | Applied physics letters 2013-09, Vol.103 (11), p.111113 |
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| container_title | Applied physics letters |
| container_volume | 103 |
| creator | Tan, K. H. Yoon, S. F. Wicaksono, S. Loke, W. K. Li, D. S. Saadsaoud, N. Tripon-Canseliet, C. Lampin, J. F. Decoster, D. Chazelas, J. |
| description | We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application. |
| doi_str_mv | 10.1063/1.4820797 |
| format | Article |
| fullrecord | <record><control><sourceid>hal_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22218050</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_00861768v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c392t-337c1c21c69c3981308d21388607008b20b6e7b8173ca985e0f9f8e00156a9f53</originalsourceid><addsrcrecordid>eNpFkE9LAzEQxYMoWP8c_AYBTx62ziTuJuutFG2Fogf14iVk02w3st0sSdrit3dLi56G9_jNm-ERcoMwRij4PY4fJANRihMyQhAi44jylIwAgGdFmeM5uYjxe5A543xEvhZ-R5Nd9zbotAmWroLfdXSmXyfxvXqkE9oHv3bRdSu61skGp1ta-0D7xidvfLfcmOS2lsadS6ahuu9bZ3RyvrsiZ7Vuo70-zkvy-fz0MZ1ni7fZy3SyyAwvWco4FwYNQ1OUgyGRg1wy5FIWIABkxaAqrKgkCm50KXMLdVlLC4B5ocs655fk9pDrY3IqGpesaYbPOmuSYoyhhBwG6u5ANbpVfXBrHX6U107NJwu194ZbBYpCbvGfNcHHGGz9t4Cg9jUrVMea-S-NTW1B</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Low temperature grown GaNAsSb: A promising material for photoconductive switch application</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Tan, K. H. ; Yoon, S. F. ; Wicaksono, S. ; Loke, W. K. ; Li, D. S. ; Saadsaoud, N. ; Tripon-Canseliet, C. ; Lampin, J. F. ; Decoster, D. ; Chazelas, J.</creator><creatorcontrib>Tan, K. H. ; Yoon, S. F. ; Wicaksono, S. ; Loke, W. K. ; Li, D. S. ; Saadsaoud, N. ; Tripon-Canseliet, C. ; Lampin, J. F. ; Decoster, D. ; Chazelas, J.</creatorcontrib><description>We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4820797</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ABSORPTION ; ANTIMONY ; CARRIER LIFETIME ; Electromagnetism ; Engineering Sciences ; GALLIUM ARSENIDES ; LAYERS ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; NITROGEN ; RADIOWAVE RADIATION ; SEMICONDUCTOR MATERIALS ; SWITCHES</subject><ispartof>Applied physics letters, 2013-09, Vol.103 (11), p.111113</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c392t-337c1c21c69c3981308d21388607008b20b6e7b8173ca985e0f9f8e00156a9f53</citedby><cites>FETCH-LOGICAL-c392t-337c1c21c69c3981308d21388607008b20b6e7b8173ca985e0f9f8e00156a9f53</cites><orcidid>0000-0002-1187-506X ; 0000-0001-8309-8178</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://hal.sorbonne-universite.fr/hal-00861768$$DView record in HAL$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/22218050$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Tan, K. H.</creatorcontrib><creatorcontrib>Yoon, S. F.</creatorcontrib><creatorcontrib>Wicaksono, S.</creatorcontrib><creatorcontrib>Loke, W. K.</creatorcontrib><creatorcontrib>Li, D. S.</creatorcontrib><creatorcontrib>Saadsaoud, N.</creatorcontrib><creatorcontrib>Tripon-Canseliet, C.</creatorcontrib><creatorcontrib>Lampin, J. F.</creatorcontrib><creatorcontrib>Decoster, D.</creatorcontrib><creatorcontrib>Chazelas, J.</creatorcontrib><title>Low temperature grown GaNAsSb: A promising material for photoconductive switch application</title><title>Applied physics letters</title><description>We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.</description><subject>ABSORPTION</subject><subject>ANTIMONY</subject><subject>CARRIER LIFETIME</subject><subject>Electromagnetism</subject><subject>Engineering Sciences</subject><subject>GALLIUM ARSENIDES</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NITROGEN</subject><subject>RADIOWAVE RADIATION</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SWITCHES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpFkE9LAzEQxYMoWP8c_AYBTx62ziTuJuutFG2Fogf14iVk02w3st0sSdrit3dLi56G9_jNm-ERcoMwRij4PY4fJANRihMyQhAi44jylIwAgGdFmeM5uYjxe5A543xEvhZ-R5Nd9zbotAmWroLfdXSmXyfxvXqkE9oHv3bRdSu61skGp1ta-0D7xidvfLfcmOS2lsadS6ahuu9bZ3RyvrsiZ7Vuo70-zkvy-fz0MZ1ni7fZy3SyyAwvWco4FwYNQ1OUgyGRg1wy5FIWIABkxaAqrKgkCm50KXMLdVlLC4B5ocs655fk9pDrY3IqGpesaYbPOmuSYoyhhBwG6u5ANbpVfXBrHX6U107NJwu194ZbBYpCbvGfNcHHGGz9t4Cg9jUrVMea-S-NTW1B</recordid><startdate>20130909</startdate><enddate>20130909</enddate><creator>Tan, K. H.</creator><creator>Yoon, S. F.</creator><creator>Wicaksono, S.</creator><creator>Loke, W. K.</creator><creator>Li, D. S.</creator><creator>Saadsaoud, N.</creator><creator>Tripon-Canseliet, C.</creator><creator>Lampin, J. F.</creator><creator>Decoster, D.</creator><creator>Chazelas, J.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-1187-506X</orcidid><orcidid>https://orcid.org/0000-0001-8309-8178</orcidid></search><sort><creationdate>20130909</creationdate><title>Low temperature grown GaNAsSb: A promising material for photoconductive switch application</title><author>Tan, K. H. ; Yoon, S. F. ; Wicaksono, S. ; Loke, W. K. ; Li, D. S. ; Saadsaoud, N. ; Tripon-Canseliet, C. ; Lampin, J. F. ; Decoster, D. ; Chazelas, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c392t-337c1c21c69c3981308d21388607008b20b6e7b8173ca985e0f9f8e00156a9f53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>ABSORPTION</topic><topic>ANTIMONY</topic><topic>CARRIER LIFETIME</topic><topic>Electromagnetism</topic><topic>Engineering Sciences</topic><topic>GALLIUM ARSENIDES</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>NITROGEN</topic><topic>RADIOWAVE RADIATION</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SWITCHES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tan, K. H.</creatorcontrib><creatorcontrib>Yoon, S. F.</creatorcontrib><creatorcontrib>Wicaksono, S.</creatorcontrib><creatorcontrib>Loke, W. K.</creatorcontrib><creatorcontrib>Li, D. S.</creatorcontrib><creatorcontrib>Saadsaoud, N.</creatorcontrib><creatorcontrib>Tripon-Canseliet, C.</creatorcontrib><creatorcontrib>Lampin, J. F.</creatorcontrib><creatorcontrib>Decoster, D.</creatorcontrib><creatorcontrib>Chazelas, J.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tan, K. H.</au><au>Yoon, S. F.</au><au>Wicaksono, S.</au><au>Loke, W. K.</au><au>Li, D. S.</au><au>Saadsaoud, N.</au><au>Tripon-Canseliet, C.</au><au>Lampin, J. F.</au><au>Decoster, D.</au><au>Chazelas, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low temperature grown GaNAsSb: A promising material for photoconductive switch application</atitle><jtitle>Applied physics letters</jtitle><date>2013-09-09</date><risdate>2013</risdate><volume>103</volume><issue>11</issue><spage>111113</spage><pages>111113-</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4820797</doi><orcidid>https://orcid.org/0000-0002-1187-506X</orcidid><orcidid>https://orcid.org/0000-0001-8309-8178</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2013-09, Vol.103 (11), p.111113 |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ABSORPTION ANTIMONY CARRIER LIFETIME Electromagnetism Engineering Sciences GALLIUM ARSENIDES LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NITROGEN RADIOWAVE RADIATION SEMICONDUCTOR MATERIALS SWITCHES |
| title | Low temperature grown GaNAsSb: A promising material for photoconductive switch application |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T18%3A54%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20temperature%20grown%20GaNAsSb:%20A%20promising%20material%20for%20photoconductive%20switch%20application&rft.jtitle=Applied%20physics%20letters&rft.au=Tan,%20K.%20H.&rft.date=2013-09-09&rft.volume=103&rft.issue=11&rft.spage=111113&rft.pages=111113-&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4820797&rft_dat=%3Chal_osti_%3Eoai_HAL_hal_00861768v1%3C/hal_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |