Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study

By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO3) la...

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Veröffentlicht in:	Applied physics letters 2013-12, Vol.103 (26)
Hauptverfasser:	Han, Cheng, Lin, Jiadan, Xiang, Du, Wang, Chaocheng, Wang, Li, Chen, Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CHEMICAL VAPOR DEPOSITION Conductivity Doping ELECTRIC CONDUCTIVITY ELECTRODES ELECTRON MOBILITY FIELD EFFECT TRANSISTORS GRAPHENE HOLE MOBILITY HOLES LAYERS MOLECULAR BEAM EPITAXY Molybdenum MOLYBDENUM OXIDES Molybdenum trioxide NANOSCIENCE AND NANOTECHNOLOGY Organic chemistry Semiconductor devices SURFACES Transistors
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