Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale
Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga ad...
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| Veröffentlicht in: | Applied physics letters 2013-12, Vol.103 (26) |
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| container_issue | 26 |
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| container_title | Applied physics letters |
| container_volume | 103 |
| creator | Bietti, Sergio Scaccabarozzi, Andrea Frigeri, Cesare Bollani, Monica Bonera, Emiliano Falub, Claudiu V. von Känel, Hans Miglio, Leo Sanguinetti, Stefano |
| description | Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing. |
| doi_str_mv | 10.1063/1.4857835 |
| format | Article |
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The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. 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This opens the route to thick film applications without crack formation and wafer bowing.</description><subject>Adatoms</subject><subject>Applied physics</subject><subject>Arrays</subject><subject>ASPECT RATIO</subject><subject>BOWING</subject><subject>CRACK PROPAGATION</subject><subject>Crystal defects</subject><subject>CRYSTALS</subject><subject>DIFFUSION</subject><subject>DIFFUSION LENGTH</subject><subject>Gallium arsenide</subject><subject>GALLIUM ARSENIDES</subject><subject>High aspect ratio</subject><subject>INTEGRATED CIRCUITS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON</subject><subject>Silicon substrates</subject><subject>STRAINS</subject><subject>SUBSTRATES</subject><subject>Surface diffusion</subject><subject>SURFACES</subject><subject>THERMAL EXPANSION</subject><subject>Thermal strain</subject><subject>Thick films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpFkUFLAzEQhYMoWKsH_0HASz1szWyaZHssRatQ8aCeQzY7sSnbzbpJD_33Rlr0NMzM9x48HiG3wKbAJH-A6awSquLijIyAKVVwgOqcjBhjvJBzAZfkKsZtXkXJ-Yi419CF1qeNt9R3Cb8Gk3zoaHA09Mlb09J8apCuzCLS_Hj3dMIY3NO4r2PKNEbaIPbtgfYmJRw6bKhJ1NCdt0MWxOyB1-TCmTbizWmOyefT48fyuVi_rV6Wi3VhueCpqGWjWAXIFVZqJo3gtZi7xihTVxaEaySKKl8BgGON5cw5IaR0TspZ7cDxMbk7-oaYvI7WJ7QbG7oObdJlWYJSWTomkyPVD-F7jzHpnY8W29Z0GPZRg1QgKjEH_m_4h27DfuhyBl1CqZTkpRCZuj9SOXGMAzrdD35nhoMGpn970aBPvfAfcgF9XA</recordid><startdate>20131223</startdate><enddate>20131223</enddate><creator>Bietti, Sergio</creator><creator>Scaccabarozzi, Andrea</creator><creator>Frigeri, Cesare</creator><creator>Bollani, Monica</creator><creator>Bonera, Emiliano</creator><creator>Falub, Claudiu V.</creator><creator>von Känel, Hans</creator><creator>Miglio, Leo</creator><creator>Sanguinetti, Stefano</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7QQ</scope><scope>7U5</scope><scope>JG9</scope><scope>OTOTI</scope></search><sort><creationdate>20131223</creationdate><title>Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale</title><author>Bietti, Sergio ; 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| ispartof | Applied physics letters, 2013-12, Vol.103 (26) |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Adatoms Applied physics Arrays ASPECT RATIO BOWING CRACK PROPAGATION Crystal defects CRYSTALS DIFFUSION DIFFUSION LENGTH Gallium arsenide GALLIUM ARSENIDES High aspect ratio INTEGRATED CIRCUITS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY SEMICONDUCTOR MATERIALS SILICON Silicon substrates STRAINS SUBSTRATES Surface diffusion SURFACES THERMAL EXPANSION Thermal strain Thick films |
| title | Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale |
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