The epitaxial growth of (111) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface

[Display omitted] ► A monocrystalline Si film was demonstrated by XRD to epitaxially grow on the 6H-SiC substrate. ► A 4:5 Si-to-SiC lattice matching structure was observed at the Si/SiC interface. ► The calculated value of the actual lattice mismatch is only 0.26%. ► Defects can be effectively redu...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Materials research bulletin 2012-06, Vol.47 (6), p.1331-1334
Hauptverfasser:	Yang, Chen, Chen, Zhiming, Hu, Jichao, Ren, Zhanqiang, Lin, Shenghuang
Format:	Artikel
Sprache:	eng
Schlagworte:	A. Interfaces A. Semiconductors B. Epitaxial growth C. Electron microscopy CHEMICAL VAPOR DEPOSITION CONTROL CRYSTAL DEFECTS D. Crystal structure EPITAXY INTERFACES MATERIALS SCIENCE SEMICONDUCTOR MATERIALS SILICON CARBIDES SUBSTRATES TRANSMISSION ELECTRON MICROSCOPY X-RAY DIFFRACTION
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!