Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths

A series of AlGaAs/InGaAs/AlGaAs quantum-well heterostructures with different quantum-well depths and approximately the same concentrations of two-dimensional electrons is grown by molecular-beam epitaxy. The built-in electric field in the grown samples is determined from the photoreflectance data a...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2013-09, Vol.47 (9), p.1203-1208
Hauptverfasser:	Khabibullin, R. A., Galiev, G. B., Klimov, E. A., Ponomarev, D. S., Vasil’evskii, I. S., Kulbachinskii, V. A., Bokov, P. Yu, Avakyants, L. P., Chervyakov, A. V., Maltsev, P. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES Analysis ELECTRIC FIELDS Epitaxy GALLIUM ARSENIDES INDIUM ARSENIDES Low-Dimensional Systems Magnetic Materials Magnetism MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY OPTICAL PROPERTIES PHOTOLUMINESCENCE Physics Physics and Astronomy Quantum Phenomena QUANTUM WELLS Semiconductor Structures SURFACES THICKNESS
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