Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths
A series of AlGaAs/InGaAs/AlGaAs quantum-well heterostructures with different quantum-well depths and approximately the same concentrations of two-dimensional electrons is grown by molecular-beam epitaxy. The built-in electric field in the grown samples is determined from the photoreflectance data a...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2013-09, Vol.47 (9), p.1203-1208 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Khabibullin, R. A. Galiev, G. B. Klimov, E. A. Ponomarev, D. S. Vasil’evskii, I. S. Kulbachinskii, V. A. Bokov, P. Yu Avakyants, L. P. Chervyakov, A. V. Maltsev, P. P. |
| description | A series of AlGaAs/InGaAs/AlGaAs quantum-well heterostructures with different quantum-well depths and approximately the same concentrations of two-dimensional electrons is grown by molecular-beam epitaxy. The built-in electric field in the grown samples is determined from the photoreflectance data and, on this basis, the energy-band structure in the quantum-well region is calculated. It is found that the highest mobility μ
e
of two-dimensional electrons is attained in the sample with a barrier-layer thickness of
L
b
= 11 nm. Measurements of the photoluminescence spectra and the band-structure calculations demonstrate that, as the quantum well becomes closer to the surface, the doping profile broadens due to diffusion and segregation processes. The nonmonotonic dependence of μ
e
on the distance between the surface and the quantum well is explained. |
| doi_str_mv | 10.1134/S106378261309008X |
| format | Article |
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e
of two-dimensional electrons is attained in the sample with a barrier-layer thickness of
L
b
= 11 nm. Measurements of the photoluminescence spectra and the band-structure calculations demonstrate that, as the quantum well becomes closer to the surface, the doping profile broadens due to diffusion and segregation processes. The nonmonotonic dependence of μ
e
on the distance between the surface and the quantum well is explained.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S106378261309008X</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>ALUMINIUM ARSENIDES ; Analysis ; ELECTRIC FIELDS ; Epitaxy ; GALLIUM ARSENIDES ; INDIUM ARSENIDES ; Low-Dimensional Systems ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; NANOSCIENCE AND NANOTECHNOLOGY ; OPTICAL PROPERTIES ; PHOTOLUMINESCENCE ; Physics ; Physics and Astronomy ; Quantum Phenomena ; QUANTUM WELLS ; Semiconductor Structures ; SURFACES ; THICKNESS</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2013-09, Vol.47 (9), p.1203-1208</ispartof><rights>Pleiades Publishing, Ltd. 2013</rights><rights>COPYRIGHT 2013 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-1e3fdd0c043ced03bedc9636c8c7fe5e50120f3a89004431f19a1502a843c4e03</citedby><cites>FETCH-LOGICAL-c355t-1e3fdd0c043ced03bedc9636c8c7fe5e50120f3a89004431f19a1502a843c4e03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S106378261309008X$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S106378261309008X$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22210543$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Khabibullin, R. A.</creatorcontrib><creatorcontrib>Galiev, G. B.</creatorcontrib><creatorcontrib>Klimov, E. A.</creatorcontrib><creatorcontrib>Ponomarev, D. S.</creatorcontrib><creatorcontrib>Vasil’evskii, I. S.</creatorcontrib><creatorcontrib>Kulbachinskii, V. A.</creatorcontrib><creatorcontrib>Bokov, P. Yu</creatorcontrib><creatorcontrib>Avakyants, L. P.</creatorcontrib><creatorcontrib>Chervyakov, A. V.</creatorcontrib><creatorcontrib>Maltsev, P. P.</creatorcontrib><title>Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>A series of AlGaAs/InGaAs/AlGaAs quantum-well heterostructures with different quantum-well depths and approximately the same concentrations of two-dimensional electrons is grown by molecular-beam epitaxy. The built-in electric field in the grown samples is determined from the photoreflectance data and, on this basis, the energy-band structure in the quantum-well region is calculated. It is found that the highest mobility μ
e
of two-dimensional electrons is attained in the sample with a barrier-layer thickness of
L
b
= 11 nm. Measurements of the photoluminescence spectra and the band-structure calculations demonstrate that, as the quantum well becomes closer to the surface, the doping profile broadens due to diffusion and segregation processes. The nonmonotonic dependence of μ
e
on the distance between the surface and the quantum well is explained.</description><subject>ALUMINIUM ARSENIDES</subject><subject>Analysis</subject><subject>ELECTRIC FIELDS</subject><subject>Epitaxy</subject><subject>GALLIUM ARSENIDES</subject><subject>INDIUM ARSENIDES</subject><subject>Low-Dimensional Systems</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>OPTICAL PROPERTIES</subject><subject>PHOTOLUMINESCENCE</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Phenomena</subject><subject>QUANTUM WELLS</subject><subject>Semiconductor Structures</subject><subject>SURFACES</subject><subject>THICKNESS</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kcFLwzAYxYsoOKd_gLeA525Jk3btsYw5BwMPKngrMfmyZXRJTVKG_73pqidBcvhe8t4v8PiS5J7gGSGUzV8ILuiizApCcYVx-X6RTEhUacEW1eWgC5oO_nVy4_0BY0LKnE2S06oFEZwWvEXcSGS7cNadsx24oMEjq5AB7lLfO8UFoLpd89rPN-Y8xhv67LkJ_RGdoG09OumwR1IrBQ5M-DXTwUQSurD3t8mV4q2Hu585Td4eV6_Lp3T7vN4s620qaJ6HlABVUmKBGRUgMf0AKaqCFqIUCwU55JhkWFFexs6MUaJIxUmOM15GgAGm0-Rh_Nf6oBsvdACxF9aY2LrJsozgnNGYmo2pHW-h0UbZ4LiIR8JRxzQoHd9rGqMFK88AGQHhrPcOVNM5feTuqyG4GRbS_FlIZLKR8TFrduCag-2die3_gb4BkViNkg</recordid><startdate>20130901</startdate><enddate>20130901</enddate><creator>Khabibullin, R. A.</creator><creator>Galiev, G. B.</creator><creator>Klimov, E. A.</creator><creator>Ponomarev, D. S.</creator><creator>Vasil’evskii, I. S.</creator><creator>Kulbachinskii, V. A.</creator><creator>Bokov, P. Yu</creator><creator>Avakyants, L. P.</creator><creator>Chervyakov, A. V.</creator><creator>Maltsev, P. P.</creator><general>Springer US</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20130901</creationdate><title>Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths</title><author>Khabibullin, R. A. ; Galiev, G. B. ; Klimov, E. A. ; Ponomarev, D. S. ; Vasil’evskii, I. S. ; Kulbachinskii, V. A. ; Bokov, P. Yu ; Avakyants, L. P. ; Chervyakov, A. V. ; Maltsev, P. 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A.</creatorcontrib><creatorcontrib>Galiev, G. B.</creatorcontrib><creatorcontrib>Klimov, E. A.</creatorcontrib><creatorcontrib>Ponomarev, D. S.</creatorcontrib><creatorcontrib>Vasil’evskii, I. S.</creatorcontrib><creatorcontrib>Kulbachinskii, V. A.</creatorcontrib><creatorcontrib>Bokov, P. Yu</creatorcontrib><creatorcontrib>Avakyants, L. P.</creatorcontrib><creatorcontrib>Chervyakov, A. V.</creatorcontrib><creatorcontrib>Maltsev, P. P.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khabibullin, R. A.</au><au>Galiev, G. B.</au><au>Klimov, E. A.</au><au>Ponomarev, D. S.</au><au>Vasil’evskii, I. S.</au><au>Kulbachinskii, V. A.</au><au>Bokov, P. Yu</au><au>Avakyants, L. P.</au><au>Chervyakov, A. V.</au><au>Maltsev, P. 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e
of two-dimensional electrons is attained in the sample with a barrier-layer thickness of
L
b
= 11 nm. Measurements of the photoluminescence spectra and the band-structure calculations demonstrate that, as the quantum well becomes closer to the surface, the doping profile broadens due to diffusion and segregation processes. The nonmonotonic dependence of μ
e
on the distance between the surface and the quantum well is explained.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1134/S106378261309008X</doi><tpages>6</tpages></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | ALUMINIUM ARSENIDES Analysis ELECTRIC FIELDS Epitaxy GALLIUM ARSENIDES INDIUM ARSENIDES Low-Dimensional Systems Magnetic Materials Magnetism MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY OPTICAL PROPERTIES PHOTOLUMINESCENCE Physics Physics and Astronomy Quantum Phenomena QUANTUM WELLS Semiconductor Structures SURFACES THICKNESS |
| title | Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths |
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