Features of the electroluminescence spectra of quantum-confined silicon p+-n heterojunctions in the infrared spectral region

The results of studying the characteristics of optical emission in various regions of quantum-confined silicon p + - n heterojunctions heavily doped with boron are analyzed. The results obtained allow one to conclude that near-infrared electroluminescence arises near the heterointerface between the nanostructured wide-gap silicon p + -barrier heavily doped with boron and n -type silicon (100), the formation of which included the active involvement of boron dipole centers.