Structural and optical characterizations of chemically deposited cadmium selenide thin films
[Display omitted] ► CdSe thin films deposited first time using formic acid as a complexing agent. ► The deposited thin films were characterized by XRD, SEM, UV-vis-NIR and electrical techniques. ► X-ray diffraction analysis shows presence of zinc blende crystal structure. Synthesis of cadmium seleni...
Gespeichert in:
| Veröffentlicht in: | Materials research bulletin 2011-10, Vol.46 (10), p.1600-1603 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1603 |
|---|---|
| container_issue | 10 |
| container_start_page | 1600 |
| container_title | Materials research bulletin |
| container_volume | 46 |
| creator | Khomane, A.S. |
| description | [Display omitted]
► CdSe thin films deposited first time using formic acid as a complexing agent. ► The deposited thin films were characterized by XRD, SEM, UV-vis-NIR and electrical techniques. ► X-ray diffraction analysis shows presence of zinc blende crystal structure.
Synthesis of cadmium selenide thin films by CBD method has been presented. The deposited film samples were subjected to XRD, SEM, UV-vis-NIR and TEP characterization. X-ray diffraction analysis showed that CdSe film sample crystallized in zinc blende or cubic phase structure. SEM studies reveal that the grains are spherical in shape and uniformly distributed all over the surface of the substrates. The optical band gap energy of as deposited film sample was found to be in the order of 1.8
eV. The electrical conductivity of the film sample was found to be 10
−6 (Ω
cm)
−1 with n-type of conduction mechanism. |
| doi_str_mv | 10.1016/j.materresbull.2011.06.011 |
| format | Article |
| fullrecord | <record><control><sourceid>elsevier_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22210082</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0025540811002698</els_id><sourcerecordid>S0025540811002698</sourcerecordid><originalsourceid>FETCH-LOGICAL-c352t-c7d7f9bc4953a370e26fd371e22c6db8245efc717fa8653bd3f366d846cf7e2b3</originalsourceid><addsrcrecordid>eNqNUMtKBDEQDKLg-viHQc8z5jGTzHqT9QmCB_UmhEynw2aZx5JkBf16M6wHj56q6a6u6i5CLhitGGXyalMNJmEIGLtd31ecMlZRWWU4IAvWKlHWnKtDsqCUN2VT0_aYnMS4oZTWrVIL8vGawg7SLpi-MKMtpm3ykGtYm2AgS_tvk_w0xmJyuYnDPO2_CovbKfqEtgBjB78biog9jt5ikdZ-LJzvh3hGjpzpI57_4il5v797Wz2Wzy8PT6ub5xJEw1MJyiq37KBeNsIIRZFLZ4ViyDlI27W8btCBYsqZVjais8IJKW1bS3AKeSdOyeVed4rJ6wj5LljDNI4ISXPOGaUtz6zrPQvCFGNAp7fBDyZ8aUb1nKbe6L9p6jlNTaXOkJdv98uY__j0GGYbHAGtD7OLnfx_ZH4AL_OHYQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Structural and optical characterizations of chemically deposited cadmium selenide thin films</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Khomane, A.S.</creator><creatorcontrib>Khomane, A.S.</creatorcontrib><description>[Display omitted]
► CdSe thin films deposited first time using formic acid as a complexing agent. ► The deposited thin films were characterized by XRD, SEM, UV-vis-NIR and electrical techniques. ► X-ray diffraction analysis shows presence of zinc blende crystal structure.
Synthesis of cadmium selenide thin films by CBD method has been presented. The deposited film samples were subjected to XRD, SEM, UV-vis-NIR and TEP characterization. X-ray diffraction analysis showed that CdSe film sample crystallized in zinc blende or cubic phase structure. SEM studies reveal that the grains are spherical in shape and uniformly distributed all over the surface of the substrates. The optical band gap energy of as deposited film sample was found to be in the order of 1.8
eV. The electrical conductivity of the film sample was found to be 10
−6 (Ω
cm)
−1 with n-type of conduction mechanism.</description><identifier>ISSN: 0025-5408</identifier><identifier>EISSN: 1873-4227</identifier><identifier>DOI: 10.1016/j.materresbull.2011.06.011</identifier><language>eng</language><publisher>United States: Elsevier Ltd</publisher><subject>A. Thin films ; B. Chemical synthesis ; C. X-ray diffraction ; CADMIUM ; CADMIUM SELENIDES ; CRYSTAL STRUCTURE ; D. Electrical properties ; DEPOSITS ; FORMIC ACID ; MATERIALS SCIENCE ; SCANNING ELECTRON MICROSCOPY ; SUBSTRATES ; SURFACES ; SYNTHESIS ; THIN FILMS ; X-RAY DIFFRACTION ; ZINC SULFIDES</subject><ispartof>Materials research bulletin, 2011-10, Vol.46 (10), p.1600-1603</ispartof><rights>2011 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-c7d7f9bc4953a370e26fd371e22c6db8245efc717fa8653bd3f366d846cf7e2b3</citedby><cites>FETCH-LOGICAL-c352t-c7d7f9bc4953a370e26fd371e22c6db8245efc717fa8653bd3f366d846cf7e2b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.materresbull.2011.06.011$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,780,784,885,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22210082$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Khomane, A.S.</creatorcontrib><title>Structural and optical characterizations of chemically deposited cadmium selenide thin films</title><title>Materials research bulletin</title><description>[Display omitted]
► CdSe thin films deposited first time using formic acid as a complexing agent. ► The deposited thin films were characterized by XRD, SEM, UV-vis-NIR and electrical techniques. ► X-ray diffraction analysis shows presence of zinc blende crystal structure.
Synthesis of cadmium selenide thin films by CBD method has been presented. The deposited film samples were subjected to XRD, SEM, UV-vis-NIR and TEP characterization. X-ray diffraction analysis showed that CdSe film sample crystallized in zinc blende or cubic phase structure. SEM studies reveal that the grains are spherical in shape and uniformly distributed all over the surface of the substrates. The optical band gap energy of as deposited film sample was found to be in the order of 1.8
eV. The electrical conductivity of the film sample was found to be 10
−6 (Ω
cm)
−1 with n-type of conduction mechanism.</description><subject>A. Thin films</subject><subject>B. Chemical synthesis</subject><subject>C. X-ray diffraction</subject><subject>CADMIUM</subject><subject>CADMIUM SELENIDES</subject><subject>CRYSTAL STRUCTURE</subject><subject>D. Electrical properties</subject><subject>DEPOSITS</subject><subject>FORMIC ACID</subject><subject>MATERIALS SCIENCE</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>SUBSTRATES</subject><subject>SURFACES</subject><subject>SYNTHESIS</subject><subject>THIN FILMS</subject><subject>X-RAY DIFFRACTION</subject><subject>ZINC SULFIDES</subject><issn>0025-5408</issn><issn>1873-4227</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNUMtKBDEQDKLg-viHQc8z5jGTzHqT9QmCB_UmhEynw2aZx5JkBf16M6wHj56q6a6u6i5CLhitGGXyalMNJmEIGLtd31ecMlZRWWU4IAvWKlHWnKtDsqCUN2VT0_aYnMS4oZTWrVIL8vGawg7SLpi-MKMtpm3ykGtYm2AgS_tvk_w0xmJyuYnDPO2_CovbKfqEtgBjB78biog9jt5ikdZ-LJzvh3hGjpzpI57_4il5v797Wz2Wzy8PT6ub5xJEw1MJyiq37KBeNsIIRZFLZ4ViyDlI27W8btCBYsqZVjais8IJKW1bS3AKeSdOyeVed4rJ6wj5LljDNI4ISXPOGaUtz6zrPQvCFGNAp7fBDyZ8aUb1nKbe6L9p6jlNTaXOkJdv98uY__j0GGYbHAGtD7OLnfx_ZH4AL_OHYQ</recordid><startdate>20111001</startdate><enddate>20111001</enddate><creator>Khomane, A.S.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20111001</creationdate><title>Structural and optical characterizations of chemically deposited cadmium selenide thin films</title><author>Khomane, A.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-c7d7f9bc4953a370e26fd371e22c6db8245efc717fa8653bd3f366d846cf7e2b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>A. Thin films</topic><topic>B. Chemical synthesis</topic><topic>C. X-ray diffraction</topic><topic>CADMIUM</topic><topic>CADMIUM SELENIDES</topic><topic>CRYSTAL STRUCTURE</topic><topic>D. Electrical properties</topic><topic>DEPOSITS</topic><topic>FORMIC ACID</topic><topic>MATERIALS SCIENCE</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>SUBSTRATES</topic><topic>SURFACES</topic><topic>SYNTHESIS</topic><topic>THIN FILMS</topic><topic>X-RAY DIFFRACTION</topic><topic>ZINC SULFIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khomane, A.S.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Materials research bulletin</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khomane, A.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and optical characterizations of chemically deposited cadmium selenide thin films</atitle><jtitle>Materials research bulletin</jtitle><date>2011-10-01</date><risdate>2011</risdate><volume>46</volume><issue>10</issue><spage>1600</spage><epage>1603</epage><pages>1600-1603</pages><issn>0025-5408</issn><eissn>1873-4227</eissn><abstract>[Display omitted]
► CdSe thin films deposited first time using formic acid as a complexing agent. ► The deposited thin films were characterized by XRD, SEM, UV-vis-NIR and electrical techniques. ► X-ray diffraction analysis shows presence of zinc blende crystal structure.
Synthesis of cadmium selenide thin films by CBD method has been presented. The deposited film samples were subjected to XRD, SEM, UV-vis-NIR and TEP characterization. X-ray diffraction analysis showed that CdSe film sample crystallized in zinc blende or cubic phase structure. SEM studies reveal that the grains are spherical in shape and uniformly distributed all over the surface of the substrates. The optical band gap energy of as deposited film sample was found to be in the order of 1.8
eV. The electrical conductivity of the film sample was found to be 10
−6 (Ω
cm)
−1 with n-type of conduction mechanism.</abstract><cop>United States</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.materresbull.2011.06.011</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0025-5408 |
| ispartof | Materials research bulletin, 2011-10, Vol.46 (10), p.1600-1603 |
| issn | 0025-5408 1873-4227 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22210082 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | A. Thin films B. Chemical synthesis C. X-ray diffraction CADMIUM CADMIUM SELENIDES CRYSTAL STRUCTURE D. Electrical properties DEPOSITS FORMIC ACID MATERIALS SCIENCE SCANNING ELECTRON MICROSCOPY SUBSTRATES SURFACES SYNTHESIS THIN FILMS X-RAY DIFFRACTION ZINC SULFIDES |
| title | Structural and optical characterizations of chemically deposited cadmium selenide thin films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T05%3A55%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-elsevier_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural%20and%20optical%20characterizations%20of%20chemically%20deposited%20cadmium%20selenide%20thin%20films&rft.jtitle=Materials%20research%20bulletin&rft.au=Khomane,%20A.S.&rft.date=2011-10-01&rft.volume=46&rft.issue=10&rft.spage=1600&rft.epage=1603&rft.pages=1600-1603&rft.issn=0025-5408&rft.eissn=1873-4227&rft_id=info:doi/10.1016/j.materresbull.2011.06.011&rft_dat=%3Celsevier_osti_%3ES0025540811002698%3C/elsevier_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_els_id=S0025540811002698&rfr_iscdi=true |