Anomalous change in dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} under violet-to-ultraviolet irradiation

The influence of light illumination on the dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) polycrystals is studied in this work. When exposed to 405-nm laser light, a reversible enhancement in the room temperature capacitance as high as 22% was observed, suggesting application of light-s...

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Veröffentlicht in:Applied physics letters 2013-05, Vol.102 (20)
Hauptverfasser: Masingboon, C., Faculty of Science and Engineering, Kasetsart University, Chalermphrakiat Sakon Nakhon Province Campus, Sakon Nakhon 47000, Eknapakul, T., Suwanwong, S., Buaphet, P., Nakajima, H., Mo, S.-K., Thongbai, P., King, P. D. C., Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, Maensiri, S., Meevasana, W., Thailand Center of Excellence in Physics, CHE, Bangkok 10400, NANOTEC-SUT Center of Excellence on Advanced Functional Nanomaterials, Suranaree University of Technology, Nakhon Ratchasima 30000
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Sprache:eng
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Zusammenfassung:The influence of light illumination on the dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) polycrystals is studied in this work. When exposed to 405-nm laser light, a reversible enhancement in the room temperature capacitance as high as 22% was observed, suggesting application of light-sensitive capacitance devices. To uncover the microscopic mechanisms mediating this change, we performed electronic structure measurements, using photoemission spectroscopy, and measured the electrical conductivity of the CCTO samples under different conditions of light exposure and oxygen partial pressure. Together, these results suggest that the large capacitance enhancement is driven by oxygen vacancies induced by the irradiation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4807741