Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn

The crystal structure, electron density distribution, and energy, kinetic, and magnetic properties of the n -ZrNiSn intermetallic semiconductor heavily doped with a Ni impurity are investigated. The effect of the accumulation of an excess number of Ni 1 + x atoms in tetrahedral interstices of the cr...

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