Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission

This work reports on the morphology and light emission characteristics of ordered InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy. Within the growth temperature range of 750 to 650 °C, the In incorporation can be modified either by the growth temperature, the In/Ga ratio, or the II...

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Veröffentlicht in:	Journal of applied physics 2013-03, Vol.113 (11)
Hauptverfasser:	Albert, S., Bengoechea-Encabo, A., Sanchez-Garcia, M. A., Calleja, E., Jahn, U.
Format:	Artikel
Sprache:	eng
Schlagworte:	GALLIUM COMPOUNDS INDIUM COMPOUNDS LUMINESCENCE MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NANOSTRUCTURES NITROGEN COMPOUNDS PROCESSING SEMICONDUCTOR MATERIALS TEMPERATURE GRADIENTS TEMPERATURE RANGE 0273-0400 K WAVELENGTHS
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