Maskless implants of 20 keV Ga+ in thin crystalline silicon on insulator

A nano-sized ion beam apparatus has been used as maskless lithography to implant 20 keV Ga+ ions into a 26 nm thick silicon crystalline film on insulator. The ion beam, with about 5 nm standard deviation, delivered few hundred ions during a single shot. Circular areas with nominal diameter of 20 or...

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Veröffentlicht in:	Journal of applied physics 2013-01, Vol.113 (4)
Hauptverfasser:	Mio, A. M., D'Arrigo, G., Milazzo, R. G., Rimini, E., Spinella, C., Peto, L., Nadzeyka, A., Bauerdick, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	AMORPHOUS STATE ANNEALING CAPACITANCE CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL DEFECTS Crystal structure CRYSTALLIZATION Damage EPITAXY FILAMENTS GALLIUM IONS Implants Insulators INTERFACES ION BEAMS ION IMPLANTATION KEV RANGE 10-100 LAYERS MATERIALS SCIENCE MOSFET Nanostructure NANOSTRUCTURES SEMICONDUCTOR MATERIALS SILICON SOLIDS TRANSMISSION ELECTRON MICROSCOPY
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