Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual...

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Veröffentlicht in:Journal of applied physics 2012-09, Vol.112 (5)
Hauptverfasser: Yang, Jialing, Eller, Brianna S., Zhu, Chiyu, England, Chris, Nemanich, Robert J.
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Zhu, Chiyu
England, Chris
Nemanich, Robert J.
description Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al2O3 layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO2/IPL/GaN structures. The VBOs were ∼0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO2 with respect to Al2O3 and GaN, respectively.
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fullrecord <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22089428</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1671491904</sourcerecordid><originalsourceid>FETCH-LOGICAL-c356t-46cc4cb961e71af60c6c63d31b97f87a9496198691f40a67c87f0b13ff6a424d3</originalsourceid><addsrcrecordid>eNotkE1LAzEURYMoWKsL_0HAjS6m5s2kyWQpxS8ouNF1yGSSNjWTjMlU6L830q4e3Ht4XA5Ct0AWQFjzCAvKqahZe4ZmQFpR8eWSnKMZITVUreDiEl3lvCMEoG3EDO1WcRhVUpP7NbhTocfKu00YTJhwtHj0Kg-qMmGrgjalnOLgNPbqYBLuzRizm0q8dZtt9Y17Z7zRU3I64xjwRnnv9gMOrkS9uUYXVvlsbk53jr5enj9Xb9X64_V99bSudLNkU0WZ1lR3goHhoCwjmmnW9A10gtuWK0FLJVomwFKiGNctt6SDxlqmaE37Zo7ujn9jnpzMuizUWx1DKNNkXRcptG4LdX-kxhR_9iZPcnBZG-9VMHGfJTAOVIAgtKAPR1SnmHMyVo7JDSodJBD5b12CPFlv_gBe2HRi</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671491904</pqid></control><display><type>article</type><title>Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Yang, Jialing ; Eller, Brianna S. ; Zhu, Chiyu ; England, Chris ; Nemanich, Robert J.</creator><creatorcontrib>Yang, Jialing ; Eller, Brianna S. ; Zhu, Chiyu ; England, Chris ; Nemanich, Robert J.</creatorcontrib><description>Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al2O3 layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO2/IPL/GaN structures. The VBOs were ∼0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO2 with respect to Al2O3 and GaN, respectively.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4749268</identifier><language>eng</language><publisher>United States</publisher><subject>70 PLASMA PHYSICS AND FUSION TECHNOLOGY ; ALUMINIUM OXIDES ; Aluminum oxide ; ANNEALING ; Bending ; Cleaning ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DEPOSITION ; DIELECTRIC MATERIALS ; GALLIUM NITRIDES ; Hafnium oxide ; HAFNIUM OXIDES ; LAYERS ; Offsets ; PHOTOEMISSION ; PLASMA ; SURFACE CLEANING ; SURFACE CONTAMINATION ; THIN FILMS ; ULTRAVIOLET RADIATION ; X RADIATION ; X-RAY PHOTOELECTRON SPECTROSCOPY</subject><ispartof>Journal of applied physics, 2012-09, Vol.112 (5)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c356t-46cc4cb961e71af60c6c63d31b97f87a9496198691f40a67c87f0b13ff6a424d3</citedby><cites>FETCH-LOGICAL-c356t-46cc4cb961e71af60c6c63d31b97f87a9496198691f40a67c87f0b13ff6a424d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22089428$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Yang, Jialing</creatorcontrib><creatorcontrib>Eller, Brianna S.</creatorcontrib><creatorcontrib>Zhu, Chiyu</creatorcontrib><creatorcontrib>England, Chris</creatorcontrib><creatorcontrib>Nemanich, Robert J.</creatorcontrib><title>Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride</title><title>Journal of applied physics</title><description>Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al2O3 layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO2/IPL/GaN structures. The VBOs were ∼0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO2 with respect to Al2O3 and GaN, respectively.</description><subject>70 PLASMA PHYSICS AND FUSION TECHNOLOGY</subject><subject>ALUMINIUM OXIDES</subject><subject>Aluminum oxide</subject><subject>ANNEALING</subject><subject>Bending</subject><subject>Cleaning</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DEPOSITION</subject><subject>DIELECTRIC MATERIALS</subject><subject>GALLIUM NITRIDES</subject><subject>Hafnium oxide</subject><subject>HAFNIUM OXIDES</subject><subject>LAYERS</subject><subject>Offsets</subject><subject>PHOTOEMISSION</subject><subject>PLASMA</subject><subject>SURFACE CLEANING</subject><subject>SURFACE CONTAMINATION</subject><subject>THIN FILMS</subject><subject>ULTRAVIOLET RADIATION</subject><subject>X RADIATION</subject><subject>X-RAY PHOTOELECTRON SPECTROSCOPY</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEURYMoWKsL_0HAjS6m5s2kyWQpxS8ouNF1yGSSNjWTjMlU6L830q4e3Ht4XA5Ct0AWQFjzCAvKqahZe4ZmQFpR8eWSnKMZITVUreDiEl3lvCMEoG3EDO1WcRhVUpP7NbhTocfKu00YTJhwtHj0Kg-qMmGrgjalnOLgNPbqYBLuzRizm0q8dZtt9Y17Z7zRU3I64xjwRnnv9gMOrkS9uUYXVvlsbk53jr5enj9Xb9X64_V99bSudLNkU0WZ1lR3goHhoCwjmmnW9A10gtuWK0FLJVomwFKiGNctt6SDxlqmaE37Zo7ujn9jnpzMuizUWx1DKNNkXRcptG4LdX-kxhR_9iZPcnBZG-9VMHGfJTAOVIAgtKAPR1SnmHMyVo7JDSodJBD5b12CPFlv_gBe2HRi</recordid><startdate>20120901</startdate><enddate>20120901</enddate><creator>Yang, Jialing</creator><creator>Eller, Brianna S.</creator><creator>Zhu, Chiyu</creator><creator>England, Chris</creator><creator>Nemanich, Robert J.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20120901</creationdate><title>Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride</title><author>Yang, Jialing ; Eller, Brianna S. ; Zhu, Chiyu ; England, Chris ; Nemanich, Robert J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c356t-46cc4cb961e71af60c6c63d31b97f87a9496198691f40a67c87f0b13ff6a424d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>70 PLASMA PHYSICS AND FUSION TECHNOLOGY</topic><topic>ALUMINIUM OXIDES</topic><topic>Aluminum oxide</topic><topic>ANNEALING</topic><topic>Bending</topic><topic>Cleaning</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DEPOSITION</topic><topic>DIELECTRIC MATERIALS</topic><topic>GALLIUM NITRIDES</topic><topic>Hafnium oxide</topic><topic>HAFNIUM OXIDES</topic><topic>LAYERS</topic><topic>Offsets</topic><topic>PHOTOEMISSION</topic><topic>PLASMA</topic><topic>SURFACE CLEANING</topic><topic>SURFACE CONTAMINATION</topic><topic>THIN FILMS</topic><topic>ULTRAVIOLET RADIATION</topic><topic>X RADIATION</topic><topic>X-RAY PHOTOELECTRON SPECTROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Jialing</creatorcontrib><creatorcontrib>Eller, Brianna S.</creatorcontrib><creatorcontrib>Zhu, Chiyu</creatorcontrib><creatorcontrib>England, Chris</creatorcontrib><creatorcontrib>Nemanich, Robert J.</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Jialing</au><au>Eller, Brianna S.</au><au>Zhu, Chiyu</au><au>England, Chris</au><au>Nemanich, Robert J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride</atitle><jtitle>Journal of applied physics</jtitle><date>2012-09-01</date><risdate>2012</risdate><volume>112</volume><issue>5</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al2O3 layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO2/IPL/GaN structures. The VBOs were ∼0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO2 with respect to Al2O3 and GaN, respectively.</abstract><cop>United States</cop><doi>10.1063/1.4749268</doi></addata></record>
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source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects 70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ALUMINIUM OXIDES
Aluminum oxide
ANNEALING
Bending
Cleaning
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
DIELECTRIC MATERIALS
GALLIUM NITRIDES
Hafnium oxide
HAFNIUM OXIDES
LAYERS
Offsets
PHOTOEMISSION
PLASMA
SURFACE CLEANING
SURFACE CONTAMINATION
THIN FILMS
ULTRAVIOLET RADIATION
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY
title Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T21%3A59%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Comparative%20band%20alignment%20of%20plasma-enhanced%20atomic%20layer%20deposited%20high-k%20dielectrics%20on%20gallium%20nitride&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Yang,%20Jialing&rft.date=2012-09-01&rft.volume=112&rft.issue=5&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4749268&rft_dat=%3Cproquest_osti_%3E1671491904%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671491904&rft_id=info:pmid/&rfr_iscdi=true