Low-temperature formation of epitaxial graphene on 6H-SiC induced by continuous electron beam irradiation

It is observed that epitaxial graphene forms on the surface of a 6H-SiC substrate by irradiating electron beam directly on the sample surface in high vacuum at relatively low temperature ( similar to 670 degree C). The symmetric shape and full width at half maximum of 2D peak in the Raman spectra in...

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Veröffentlicht in:	Applied physics letters 2012-08, Vol.101 (9), p.92105
Hauptverfasser:	Go, Heungseok, Kwak, Jinsung, Jeon, Youngeun, Kim, Sung-Dae, Cheol Lee, Byung, Suk Kang, Hyun, Ko, Jae-Hyeon, Kim, Nam, Kim, Bum-Kyu, Yoo, Jung-Woo, Youb Kim, Sung, Kim, Young-Woon, Kwon, Soon-Yong, Park, Kibog
Format:	Artikel
Sprache:	eng
Schlagworte:	CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRIC CONDUCTIVITY Electrical resistivity ELECTRON BEAMS Epitaxial growth Epitaxy GRAPHENE High vacuum IRRADIATION LAYERS NANOSCIENCE AND NANOTECHNOLOGY RAMAN SPECTRA SILICON CARBIDES SUBSTRATES SURFACES SYMMETRY VACUUM COATING VAPOR PHASE EPITAXY
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