Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses

The microstructural impact of selective femtosecond laser ablation of thin dielectric layers from monocrystalline silicon wafers was investigated. Various spots opened by 280 fs laser pulses at λ = 1.03 μm wavelength and 50 fs pulses at 800 nm, respectively, were analyzed in detail using Raman and t...

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