Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses
The microstructural impact of selective femtosecond laser ablation of thin dielectric layers from monocrystalline silicon wafers was investigated. Various spots opened by 280 fs laser pulses at λ = 1.03 μm wavelength and 50 fs pulses at 800 nm, respectively, were analyzed in detail using Raman and t...
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| Veröffentlicht in: | Journal of applied physics 2012-07, Vol.112 (2) |
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| container_title | Journal of applied physics |
| container_volume | 112 |
| creator | Rublack, Tino Schade, Martin Muchow, Markus Leipner, Hartmut S. Seifert, Gerhard |
| description | The microstructural impact of selective femtosecond laser ablation of thin dielectric layers from monocrystalline silicon wafers was investigated. Various spots opened by 280 fs laser pulses at λ = 1.03 μm wavelength and 50 fs pulses at 800 nm, respectively, were analyzed in detail using Raman and transmission electron microscopy. The results show clearly that the thin dielectric films can be removed without any detectable modification of the Si crystal structure in the opened area. In contrast, in adjacent regions corresponding to laser fluence slightly below the breaking threshold, a thin layer of amorphous silicon with a maximum thickness of about 50 nm is found at the Si/SiO2 interface after laser irradiation. More than one pulse on the same position, however, causes structural modification of the silicon after thin film ablation in any case. |
| doi_str_mv | 10.1063/1.4739305 |
| format | Article |
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Various spots opened by 280 fs laser pulses at λ = 1.03 μm wavelength and 50 fs pulses at 800 nm, respectively, were analyzed in detail using Raman and transmission electron microscopy. The results show clearly that the thin dielectric films can be removed without any detectable modification of the Si crystal structure in the opened area. In contrast, in adjacent regions corresponding to laser fluence slightly below the breaking threshold, a thin layer of amorphous silicon with a maximum thickness of about 50 nm is found at the Si/SiO2 interface after laser irradiation. More than one pulse on the same position, however, causes structural modification of the silicon after thin film ablation in any case.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4739305</identifier><language>eng</language><publisher>United States</publisher><subject>ABLATION ; COATINGS ; CRYSTAL STRUCTURE ; DAMAGE ; DIELECTRIC MATERIALS ; Dielectrics ; Femtosecond ; INTERFACES ; IRRADIATION ; LASER RADIATION ; Lasers ; LAYERS ; MATERIALS SCIENCE ; MICROSTRUCTURE ; RAMAN SPECTROSCOPY ; SILICON ; SILICON OXIDES ; SURFACE TREATMENTS ; THICKNESS ; THIN FILMS ; TRANSMISSION ELECTRON MICROSCOPY ; Wafers</subject><ispartof>Journal of applied physics, 2012-07, Vol.112 (2)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-ecc1a71cbd091ae030958bf55348c832e0a7e543ebfa2747414978a46a59396b3</citedby><cites>FETCH-LOGICAL-c325t-ecc1a71cbd091ae030958bf55348c832e0a7e543ebfa2747414978a46a59396b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22089342$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Rublack, Tino</creatorcontrib><creatorcontrib>Schade, Martin</creatorcontrib><creatorcontrib>Muchow, Markus</creatorcontrib><creatorcontrib>Leipner, Hartmut S.</creatorcontrib><creatorcontrib>Seifert, Gerhard</creatorcontrib><title>Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses</title><title>Journal of applied physics</title><description>The microstructural impact of selective femtosecond laser ablation of thin dielectric layers from monocrystalline silicon wafers was investigated. Various spots opened by 280 fs laser pulses at λ = 1.03 μm wavelength and 50 fs pulses at 800 nm, respectively, were analyzed in detail using Raman and transmission electron microscopy. The results show clearly that the thin dielectric films can be removed without any detectable modification of the Si crystal structure in the opened area. In contrast, in adjacent regions corresponding to laser fluence slightly below the breaking threshold, a thin layer of amorphous silicon with a maximum thickness of about 50 nm is found at the Si/SiO2 interface after laser irradiation. 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Various spots opened by 280 fs laser pulses at λ = 1.03 μm wavelength and 50 fs pulses at 800 nm, respectively, were analyzed in detail using Raman and transmission electron microscopy. The results show clearly that the thin dielectric films can be removed without any detectable modification of the Si crystal structure in the opened area. In contrast, in adjacent regions corresponding to laser fluence slightly below the breaking threshold, a thin layer of amorphous silicon with a maximum thickness of about 50 nm is found at the Si/SiO2 interface after laser irradiation. More than one pulse on the same position, however, causes structural modification of the silicon after thin film ablation in any case.</abstract><cop>United States</cop><doi>10.1063/1.4739305</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of applied physics, 2012-07, Vol.112 (2) |
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| language | eng |
| recordid | cdi_osti_scitechconnect_22089342 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ABLATION COATINGS CRYSTAL STRUCTURE DAMAGE DIELECTRIC MATERIALS Dielectrics Femtosecond INTERFACES IRRADIATION LASER RADIATION Lasers LAYERS MATERIALS SCIENCE MICROSTRUCTURE RAMAN SPECTROSCOPY SILICON SILICON OXIDES SURFACE TREATMENTS THICKNESS THIN FILMS TRANSMISSION ELECTRON MICROSCOPY Wafers |
| title | Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses |
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