ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers
ZnO/Zn 1− x Mg x O single quantum wells (SQWs) were grown by plasma-assisted molecular beam epitaxy on c -plane sapphire substrates. Compositional grading allows the application of optimized growth conditions for the fabrication of Zn 1− x Mg x O barriers with high crystalline quality and a maximum...
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| Veröffentlicht in: | Journal of applied physics 2012-06, Vol.111 (11), p.113504-113504-7 |
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| container_end_page | 113504-7 |
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| container_issue | 11 |
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| container_title | Journal of applied physics |
| container_volume | 111 |
| creator | Laumer, Bernhard Schuster, Fabian Wassner, Thomas A. Stutzmann, Martin Rohnke, Marcus Schörmann, Jörg Eickhoff, Martin |
| description | ZnO/Zn
1−
x
Mg
x
O single quantum wells (SQWs) were grown by plasma-assisted molecular beam epitaxy on
c
-plane sapphire substrates. Compositional grading allows the application of optimized growth conditions for the fabrication of Zn
1−
x
Mg
x
O barriers with high crystalline quality and a maximum Mg content of
x
=0.23. High resolution x-ray diffraction reveals partial relaxation of the graded barriers. Due to exciton localization, the SQW emission is found to consist of contributions from donor-bound and free excitons. While for narrow SQWs with well width
d
W
≤
2
.
5
nm
, the observed increase of the exciton binding energy is caused by quantum confinement, the drop of the photoluminescence emission below the ZnO bulk value found for wide SQWs is attributed to the quantum-confined Stark effect. For a Mg content of
x
=0.23, a built-in electric field of 630kV/cm is extracted, giving rise to a decrease of the exciton binding energy and rapid thermal quenching of the SQW emission characterized by an activation energy of (24±4) meV for
d
W
=8.3nm. |
| doi_str_mv | 10.1063/1.4723642 |
| format | Article |
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1−
x
Mg
x
O single quantum wells (SQWs) were grown by plasma-assisted molecular beam epitaxy on
c
-plane sapphire substrates. Compositional grading allows the application of optimized growth conditions for the fabrication of Zn
1−
x
Mg
x
O barriers with high crystalline quality and a maximum Mg content of
x
=0.23. High resolution x-ray diffraction reveals partial relaxation of the graded barriers. Due to exciton localization, the SQW emission is found to consist of contributions from donor-bound and free excitons. While for narrow SQWs with well width
d
W
≤
2
.
5
nm
, the observed increase of the exciton binding energy is caused by quantum confinement, the drop of the photoluminescence emission below the ZnO bulk value found for wide SQWs is attributed to the quantum-confined Stark effect. For a Mg content of
x
=0.23, a built-in electric field of 630kV/cm is extracted, giving rise to a decrease of the exciton binding energy and rapid thermal quenching of the SQW emission characterized by an activation energy of (24±4) meV for
d
W
=8.3nm.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4723642</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ACTIVATION ENERGY ; BINDING ENERGY ; CONFINEMENT ; ELECTRIC FIELDS ; EXCITONS ; MAGNESIUM COMPOUNDS ; MOLECULAR BEAM EPITAXY ; NANOSCIENCE AND NANOTECHNOLOGY ; PHOTOLUMINESCENCE ; QUANTUM WELLS ; QUENCHING ; RELAXATION ; RESOLUTION ; SAPPHIRE ; SEMICONDUCTOR MATERIALS ; SOLIDIFICATION ; STARK EFFECT ; SUBSTRATES ; X-RAY DIFFRACTION ; ZINC OXIDES</subject><ispartof>Journal of applied physics, 2012-06, Vol.111 (11), p.113504-113504-7</ispartof><rights>2012 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c311t-ad2e13cae4493a68cc411c2596762b5531bae7e49170a79cc1cdd348286621e73</citedby><cites>FETCH-LOGICAL-c311t-ad2e13cae4493a68cc411c2596762b5531bae7e49170a79cc1cdd348286621e73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4723642$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4497,27903,27904,76130,76136</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22089227$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Laumer, Bernhard</creatorcontrib><creatorcontrib>Schuster, Fabian</creatorcontrib><creatorcontrib>Wassner, Thomas A.</creatorcontrib><creatorcontrib>Stutzmann, Martin</creatorcontrib><creatorcontrib>Rohnke, Marcus</creatorcontrib><creatorcontrib>Schörmann, Jörg</creatorcontrib><creatorcontrib>Eickhoff, Martin</creatorcontrib><title>ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers</title><title>Journal of applied physics</title><description>ZnO/Zn
1−
x
Mg
x
O single quantum wells (SQWs) were grown by plasma-assisted molecular beam epitaxy on
c
-plane sapphire substrates. Compositional grading allows the application of optimized growth conditions for the fabrication of Zn
1−
x
Mg
x
O barriers with high crystalline quality and a maximum Mg content of
x
=0.23. High resolution x-ray diffraction reveals partial relaxation of the graded barriers. Due to exciton localization, the SQW emission is found to consist of contributions from donor-bound and free excitons. While for narrow SQWs with well width
d
W
≤
2
.
5
nm
, the observed increase of the exciton binding energy is caused by quantum confinement, the drop of the photoluminescence emission below the ZnO bulk value found for wide SQWs is attributed to the quantum-confined Stark effect. For a Mg content of
x
=0.23, a built-in electric field of 630kV/cm is extracted, giving rise to a decrease of the exciton binding energy and rapid thermal quenching of the SQW emission characterized by an activation energy of (24±4) meV for
d
W
=8.3nm.</description><subject>ACTIVATION ENERGY</subject><subject>BINDING ENERGY</subject><subject>CONFINEMENT</subject><subject>ELECTRIC FIELDS</subject><subject>EXCITONS</subject><subject>MAGNESIUM COMPOUNDS</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>PHOTOLUMINESCENCE</subject><subject>QUANTUM WELLS</subject><subject>QUENCHING</subject><subject>RELAXATION</subject><subject>RESOLUTION</subject><subject>SAPPHIRE</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SOLIDIFICATION</subject><subject>STARK EFFECT</subject><subject>SUBSTRATES</subject><subject>X-RAY DIFFRACTION</subject><subject>ZINC OXIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp1kL1OwzAYRS0EEqUw8AaWWOiQ1p-dxPHAgFD5kVplgaWL5TpuYpQ61HZV8fYkSlemuxxd3XsQugcyB5KzBcxTTlme0gs0AVKIhGcZuUQTQigkheDiGt2E8E0IQMHEBC03rlw8bty6npU4WFe3Bh-OysXjHp9M2wZ8srHBja0bvK6x7lw0LuLaq8pUeKu8t8aHW3S1U20wd-ecoq_X5efLe7Iq3z5enleJZgAxURU1wLQyaSqYygutUwBNM5HznG6zjMFWGW5SAZwoLrQGXVUsLWiR5xQMZ1P0MPZ2IVoZtI1GN_0mZ3SUlPZ_KR2o2Uhp34XgzU7-eLtX_lcCkYMlCfJsqWefRnYoU9F27n-4VyUHU7KUoyl5YH-nhmxA</recordid><startdate>20120601</startdate><enddate>20120601</enddate><creator>Laumer, Bernhard</creator><creator>Schuster, Fabian</creator><creator>Wassner, Thomas A.</creator><creator>Stutzmann, Martin</creator><creator>Rohnke, Marcus</creator><creator>Schörmann, Jörg</creator><creator>Eickhoff, Martin</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20120601</creationdate><title>ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers</title><author>Laumer, Bernhard ; Schuster, Fabian ; Wassner, Thomas A. ; Stutzmann, Martin ; Rohnke, Marcus ; Schörmann, Jörg ; Eickhoff, Martin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-ad2e13cae4493a68cc411c2596762b5531bae7e49170a79cc1cdd348286621e73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>ACTIVATION ENERGY</topic><topic>BINDING ENERGY</topic><topic>CONFINEMENT</topic><topic>ELECTRIC FIELDS</topic><topic>EXCITONS</topic><topic>MAGNESIUM COMPOUNDS</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>PHOTOLUMINESCENCE</topic><topic>QUANTUM WELLS</topic><topic>QUENCHING</topic><topic>RELAXATION</topic><topic>RESOLUTION</topic><topic>SAPPHIRE</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SOLIDIFICATION</topic><topic>STARK EFFECT</topic><topic>SUBSTRATES</topic><topic>X-RAY DIFFRACTION</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Laumer, Bernhard</creatorcontrib><creatorcontrib>Schuster, Fabian</creatorcontrib><creatorcontrib>Wassner, Thomas A.</creatorcontrib><creatorcontrib>Stutzmann, Martin</creatorcontrib><creatorcontrib>Rohnke, Marcus</creatorcontrib><creatorcontrib>Schörmann, Jörg</creatorcontrib><creatorcontrib>Eickhoff, Martin</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Laumer, Bernhard</au><au>Schuster, Fabian</au><au>Wassner, Thomas A.</au><au>Stutzmann, Martin</au><au>Rohnke, Marcus</au><au>Schörmann, Jörg</au><au>Eickhoff, Martin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers</atitle><jtitle>Journal of applied physics</jtitle><date>2012-06-01</date><risdate>2012</risdate><volume>111</volume><issue>11</issue><spage>113504</spage><epage>113504-7</epage><pages>113504-113504-7</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>ZnO/Zn
1−
x
Mg
x
O single quantum wells (SQWs) were grown by plasma-assisted molecular beam epitaxy on
c
-plane sapphire substrates. Compositional grading allows the application of optimized growth conditions for the fabrication of Zn
1−
x
Mg
x
O barriers with high crystalline quality and a maximum Mg content of
x
=0.23. High resolution x-ray diffraction reveals partial relaxation of the graded barriers. Due to exciton localization, the SQW emission is found to consist of contributions from donor-bound and free excitons. While for narrow SQWs with well width
d
W
≤
2
.
5
nm
, the observed increase of the exciton binding energy is caused by quantum confinement, the drop of the photoluminescence emission below the ZnO bulk value found for wide SQWs is attributed to the quantum-confined Stark effect. For a Mg content of
x
=0.23, a built-in electric field of 630kV/cm is extracted, giving rise to a decrease of the exciton binding energy and rapid thermal quenching of the SQW emission characterized by an activation energy of (24±4) meV for
d
W
=8.3nm.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4723642</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2012-06, Vol.111 (11), p.113504-113504-7 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22089227 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ACTIVATION ENERGY BINDING ENERGY CONFINEMENT ELECTRIC FIELDS EXCITONS MAGNESIUM COMPOUNDS MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY PHOTOLUMINESCENCE QUANTUM WELLS QUENCHING RELAXATION RESOLUTION SAPPHIRE SEMICONDUCTOR MATERIALS SOLIDIFICATION STARK EFFECT SUBSTRATES X-RAY DIFFRACTION ZINC OXIDES |
| title | ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers |
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