The formation of tin oxides in thin-film Sn/C/KCl(100) structures
The formation of oxides upon the thermal annealing (both in air and vacuum) of island tin films grown on a KCl(100) substrate, which was coated by a thin layer of amorphous carbon, has been investigated by transmission electron microscopy. It is established that thermal annealing at temperatures bel...
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| Veröffentlicht in: | Crystallography reports 2009-01, Vol.54 (1), p.110-115 |
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| container_title | Crystallography reports |
| container_volume | 54 |
| creator | Yurakov, Yu. A. Ryabtsev, S. V. Chuvenkova, O. A. Domashevskaya, E. P. Nikitenko, A. S. Kannykin, S. V. Kushchev, S. B. |
| description | The formation of oxides upon the thermal annealing (both in air and vacuum) of island tin films grown on a KCl(100) substrate, which was coated by a thin layer of amorphous carbon, has been investigated by transmission electron microscopy. It is established that thermal annealing at temperatures below the tin melting point (
T
m
) does not lead to phase transitions with the formation of new crystalline oxide phases. At the same time, the films undergo structural changes: the average size of blocks in the substrate plane decreases compared to those in an as-deposited film. Thermal annealing in air at temperatures above the tin melting point leads to the formation of multiphase oxide structures and increases the average size of blocks and islands in the substrate plane. It is shown that preliminary thermal annealing in air at temperatures below
T
m
hinders oxidation upon subsequent heat treatment. |
| doi_str_mv | 10.1134/S1063774509010192 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22050867</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1134_S1063774509010192</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-10230bc47afd53e02f6c6741fb51d315d5611cc9eefcd8825c74d2a118fe1c033</originalsourceid><addsrcrecordid>eNp9kEFLAzEUhIMoWKs_wNuCFz2sfS_ZZLPHslgVCx5awVvYZhOb0m4kSUH_vSn1JniagfnmwRtCrhHuEVk1WSAIVtcVhwYQsKEnZIRc0FLI5v00-xyXh_ycXMS4AQApsRqR6XJtCuvDrkvOD4W3RXJZvlxvYpFdWruhtG67KxbDpJ28tNtbBLgrYgp7nfbBxEtyZrttNFe_OiZvs4dl-1TOXx-f2-m81AxFKhEog5Wu6s72nBmgVmhRV2hXHHuGvOcCUevGGKt7KSnXddXTDlFagxoYG5Ob410fk1NRu2T0WvthMDopSoGDFHWm8Ejp4GMMxqrP4HZd-FYI6rCU-rNU7tBjJ2Z2-DBBbfw-DPmZf0o_WI1oDQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>The formation of tin oxides in thin-film Sn/C/KCl(100) structures</title><source>Springer Online Journals</source><creator>Yurakov, Yu. A. ; Ryabtsev, S. V. ; Chuvenkova, O. A. ; Domashevskaya, E. P. ; Nikitenko, A. S. ; Kannykin, S. V. ; Kushchev, S. B.</creator><creatorcontrib>Yurakov, Yu. A. ; Ryabtsev, S. V. ; Chuvenkova, O. A. ; Domashevskaya, E. P. ; Nikitenko, A. S. ; Kannykin, S. V. ; Kushchev, S. B.</creatorcontrib><description>The formation of oxides upon the thermal annealing (both in air and vacuum) of island tin films grown on a KCl(100) substrate, which was coated by a thin layer of amorphous carbon, has been investigated by transmission electron microscopy. It is established that thermal annealing at temperatures below the tin melting point (
T
m
) does not lead to phase transitions with the formation of new crystalline oxide phases. At the same time, the films undergo structural changes: the average size of blocks in the substrate plane decreases compared to those in an as-deposited film. Thermal annealing in air at temperatures above the tin melting point leads to the formation of multiphase oxide structures and increases the average size of blocks and islands in the substrate plane. It is shown that preliminary thermal annealing in air at temperatures below
T
m
hinders oxidation upon subsequent heat treatment.</description><identifier>ISSN: 1063-7745</identifier><identifier>EISSN: 1562-689X</identifier><identifier>DOI: 10.1134/S1063774509010192</identifier><language>eng</language><publisher>Moscow: Nauka/Interperiodica</publisher><subject>ANNEALING ; CARBON ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Crystallography and Scattering Methods ; MELTING POINTS ; OXIDATION ; PHASE TRANSFORMATIONS ; Physics ; Physics and Astronomy ; POTASSIUM CHLORIDES ; Surface and Thin Films ; THIN FILMS ; TIN ; TIN OXIDES ; TRANSMISSION ELECTRON MICROSCOPY</subject><ispartof>Crystallography reports, 2009-01, Vol.54 (1), p.110-115</ispartof><rights>Pleiades Publishing, Ltd. 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-10230bc47afd53e02f6c6741fb51d315d5611cc9eefcd8825c74d2a118fe1c033</citedby><cites>FETCH-LOGICAL-c316t-10230bc47afd53e02f6c6741fb51d315d5611cc9eefcd8825c74d2a118fe1c033</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063774509010192$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063774509010192$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22050867$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Yurakov, Yu. A.</creatorcontrib><creatorcontrib>Ryabtsev, S. V.</creatorcontrib><creatorcontrib>Chuvenkova, O. A.</creatorcontrib><creatorcontrib>Domashevskaya, E. P.</creatorcontrib><creatorcontrib>Nikitenko, A. S.</creatorcontrib><creatorcontrib>Kannykin, S. V.</creatorcontrib><creatorcontrib>Kushchev, S. B.</creatorcontrib><title>The formation of tin oxides in thin-film Sn/C/KCl(100) structures</title><title>Crystallography reports</title><addtitle>Crystallogr. Rep</addtitle><description>The formation of oxides upon the thermal annealing (both in air and vacuum) of island tin films grown on a KCl(100) substrate, which was coated by a thin layer of amorphous carbon, has been investigated by transmission electron microscopy. It is established that thermal annealing at temperatures below the tin melting point (
T
m
) does not lead to phase transitions with the formation of new crystalline oxide phases. At the same time, the films undergo structural changes: the average size of blocks in the substrate plane decreases compared to those in an as-deposited film. Thermal annealing in air at temperatures above the tin melting point leads to the formation of multiphase oxide structures and increases the average size of blocks and islands in the substrate plane. It is shown that preliminary thermal annealing in air at temperatures below
T
m
hinders oxidation upon subsequent heat treatment.</description><subject>ANNEALING</subject><subject>CARBON</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Crystallography and Scattering Methods</subject><subject>MELTING POINTS</subject><subject>OXIDATION</subject><subject>PHASE TRANSFORMATIONS</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>POTASSIUM CHLORIDES</subject><subject>Surface and Thin Films</subject><subject>THIN FILMS</subject><subject>TIN</subject><subject>TIN OXIDES</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><issn>1063-7745</issn><issn>1562-689X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLAzEUhIMoWKs_wNuCFz2sfS_ZZLPHslgVCx5awVvYZhOb0m4kSUH_vSn1JniagfnmwRtCrhHuEVk1WSAIVtcVhwYQsKEnZIRc0FLI5v00-xyXh_ycXMS4AQApsRqR6XJtCuvDrkvOD4W3RXJZvlxvYpFdWruhtG67KxbDpJ28tNtbBLgrYgp7nfbBxEtyZrttNFe_OiZvs4dl-1TOXx-f2-m81AxFKhEog5Wu6s72nBmgVmhRV2hXHHuGvOcCUevGGKt7KSnXddXTDlFagxoYG5Ob410fk1NRu2T0WvthMDopSoGDFHWm8Ejp4GMMxqrP4HZd-FYI6rCU-rNU7tBjJ2Z2-DBBbfw-DPmZf0o_WI1oDQ</recordid><startdate>20090101</startdate><enddate>20090101</enddate><creator>Yurakov, Yu. A.</creator><creator>Ryabtsev, S. V.</creator><creator>Chuvenkova, O. A.</creator><creator>Domashevskaya, E. P.</creator><creator>Nikitenko, A. S.</creator><creator>Kannykin, S. V.</creator><creator>Kushchev, S. B.</creator><general>Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20090101</creationdate><title>The formation of tin oxides in thin-film Sn/C/KCl(100) structures</title><author>Yurakov, Yu. A. ; Ryabtsev, S. V. ; Chuvenkova, O. A. ; Domashevskaya, E. P. ; Nikitenko, A. S. ; Kannykin, S. V. ; Kushchev, S. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-10230bc47afd53e02f6c6741fb51d315d5611cc9eefcd8825c74d2a118fe1c033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>ANNEALING</topic><topic>CARBON</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Crystallography and Scattering Methods</topic><topic>MELTING POINTS</topic><topic>OXIDATION</topic><topic>PHASE TRANSFORMATIONS</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>POTASSIUM CHLORIDES</topic><topic>Surface and Thin Films</topic><topic>THIN FILMS</topic><topic>TIN</topic><topic>TIN OXIDES</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yurakov, Yu. A.</creatorcontrib><creatorcontrib>Ryabtsev, S. V.</creatorcontrib><creatorcontrib>Chuvenkova, O. A.</creatorcontrib><creatorcontrib>Domashevskaya, E. P.</creatorcontrib><creatorcontrib>Nikitenko, A. S.</creatorcontrib><creatorcontrib>Kannykin, S. V.</creatorcontrib><creatorcontrib>Kushchev, S. B.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Crystallography reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yurakov, Yu. A.</au><au>Ryabtsev, S. V.</au><au>Chuvenkova, O. A.</au><au>Domashevskaya, E. P.</au><au>Nikitenko, A. S.</au><au>Kannykin, S. V.</au><au>Kushchev, S. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The formation of tin oxides in thin-film Sn/C/KCl(100) structures</atitle><jtitle>Crystallography reports</jtitle><stitle>Crystallogr. Rep</stitle><date>2009-01-01</date><risdate>2009</risdate><volume>54</volume><issue>1</issue><spage>110</spage><epage>115</epage><pages>110-115</pages><issn>1063-7745</issn><eissn>1562-689X</eissn><abstract>The formation of oxides upon the thermal annealing (both in air and vacuum) of island tin films grown on a KCl(100) substrate, which was coated by a thin layer of amorphous carbon, has been investigated by transmission electron microscopy. It is established that thermal annealing at temperatures below the tin melting point (
T
m
) does not lead to phase transitions with the formation of new crystalline oxide phases. At the same time, the films undergo structural changes: the average size of blocks in the substrate plane decreases compared to those in an as-deposited film. Thermal annealing in air at temperatures above the tin melting point leads to the formation of multiphase oxide structures and increases the average size of blocks and islands in the substrate plane. It is shown that preliminary thermal annealing in air at temperatures below
T
m
hinders oxidation upon subsequent heat treatment.</abstract><cop>Moscow</cop><pub>Nauka/Interperiodica</pub><doi>10.1134/S1063774509010192</doi><tpages>6</tpages></addata></record> |
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| ispartof | Crystallography reports, 2009-01, Vol.54 (1), p.110-115 |
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| source | Springer Online Journals |
| subjects | ANNEALING CARBON CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Crystallography and Scattering Methods MELTING POINTS OXIDATION PHASE TRANSFORMATIONS Physics Physics and Astronomy POTASSIUM CHLORIDES Surface and Thin Films THIN FILMS TIN TIN OXIDES TRANSMISSION ELECTRON MICROSCOPY |
| title | The formation of tin oxides in thin-film Sn/C/KCl(100) structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T12%3A33%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20formation%20of%20tin%20oxides%20in%20thin-film%20Sn/C/KCl(100)%20structures&rft.jtitle=Crystallography%20reports&rft.au=Yurakov,%20Yu.%20A.&rft.date=2009-01-01&rft.volume=54&rft.issue=1&rft.spage=110&rft.epage=115&rft.pages=110-115&rft.issn=1063-7745&rft.eissn=1562-689X&rft_id=info:doi/10.1134/S1063774509010192&rft_dat=%3Ccrossref_osti_%3E10_1134_S1063774509010192%3C/crossref_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |